TCZT8012 Vishay Telefunken Matchable Pairs – Emitter and Detector Description Pairs of infrared-emitting diode and phototransistor, matched in their optical and electrical features. These pairs enable a lot of applications. They can be used both for transmissive or reflective sensor functions. The peak wavelength of the emitter is l = 950 nm. Applications D Generally used for industrial processing and controlling, end of tape detector Features 96 12316 D Miniature case with lens D Detector with optical filter, protected against ambient light D Detector case black for easy identification of the emitter and detector D Emitter-angle of half-intensity ± ϕ = 35° D Detector-angle of half sensitivity ± ϕ = 35° D Emitter and detector in sideview case D High CTR ≥ 5% Order Instruction Ordering Code Remarks TCZT8012–PAER Document Number 83773 Rev. A3, 20–Jul–99 www.vishay.com 1 (7) TCZT8012 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 1 100 100 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 100 Unit V V mA mA mW °C Symbol Tamb Tstg Tsd Value –55 to +85 –55 to +100 260 Unit °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Operating temperature range Storage temperature range Soldering temperature Test Conditions 2 mm from case, t ≤ 5 s Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA IC = 100 mA VCE = 25 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA Symbol IC CTR VCEsat Min. 1 0.5 Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Emitter and Detector matched Parameter Collector current IC/ IF Collector emitter saturation voltage Cut-off frequency 100 1) Test Conditions VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 0.1 mA Typ. 2 1 Max. 0.4 Unit mA mA V IF = 10 mA, VCE = 5 V, fC 110 kHz RL = 100 W Coupling capacitance f = 1 MHz Ck 0.3 pF 1) Characteristics are measurement at a separation distance of 4 mm (0.55’’) within a common axis of 0.5 mm (0.02’’) and parallel within 5° www.vishay.com 2 (7) Document Number 83773 Rev. A3, 20–Jul–99 TCZT8012 Vishay Telefunken Switching Characteristics Parameter Turn-on time Turn-off time 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) IF 0 t tp IC Channel I 100 W Channel II Unit ms ms 96 11698 IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms 50 W Typ. 10.0 8.0 +5V IF IF Symbol ton toff y x Oscilloscope 1 MW RL CL 20 pF 100% 90% 15127 Figure 1. Test circuit 10% 0 t tr ts td ton tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 2. Switching times Document Number 83773 Rev. A3, 20–Jul–99 www.vishay.com 3 (7) TCZT8012 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 180 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 200 Photatransistor 160 140 120 100 IR-diode 80 60 40 1000 100 10 20 0 1 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) 96 11947 0 50 100 75 Figure 6. Collector Dark Current vs. Ambient Temperature 10 IC – Collector Current ( mA ) 1000.0 I F – Forward Current ( mA ) 25 Tamb – Ambient Temperature ( °C ) 95 11090 Figure 3. Total Power Dissipation vs. Ambient Temperature 100.0 10.0 1.0 0.1 d=4mm VCE=5V 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 10 VCE=5V IF=20mA d=4mm d=4mm IC – Collector Current ( mA ) 1.5 1.0 0.5 95 11097 IF=50mA 1 20mA 10mA 5mA 0.1 2mA 0.01 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 (7) 100 10 Figure 7. Collector Current vs. Forward Current 2.0 0 –25 1 IF – Forward Current ( mA ) 95 11098 Figure 4. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio VCE=25V IF=0 0.1 95 11099 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 8. Collector Current vs. Collector Emitter Voltage Document Number 83773 Rev. A3, 20–Jul–99 TCZT8012 Vishay Telefunken 10 I C – Collector Current ( mA ) CTR – Current Transfer Ratio ( % ) 100 10 1 VCE=5V d=4mm 0.1 d 1 0.1 VCE=5V IF=20mA 0.001 0.1 1 100 10 IF – Forward Current ( mA ) 95 11108 1 20 100.00 Non Saturated Operation VS=5V RL=100W d=4mm 15 ton 10 toff 5 0 0 95 11104 Figure 11. Collector Current vs. Distance I C – Collector Current ( mA ) t on / t off – Turn on / Turn off Time ( m s ) Figure 9. Current Transfer Ratio vs. Forward Current 100 10 d – Distance ( mm ) 95 11109 2 4 6 8 10 IC – Collector Current ( mA ) Figure 10. Turn on / off Time vs. Forward Current Document Number 83773 Rev. A3, 20–Jul–99 VCE = 5 V IF = 20 mA 0 10.00 s 4 1.00 0.10 0.01 0 96 12069 1 2 3 4 5 6 7 8 s – Displacement ( mm ) Figure 12. Collector Current vs. Displacement www.vishay.com 5 (7) TCZT8012 Vishay Telefunken Dimensions of TCZT8012 in mm 96 12105 www.vishay.com 6 (7) Document Number 83773 Rev. A3, 20–Jul–99 TCZT8012 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83773 Rev. A3, 20–Jul–99 www.vishay.com 7 (7)