VISHAY BFR93R

BFR93/BFR93R
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
1
1
13 581
13 581
94 9280
2
9510527
3
BFR93 Marking: R1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
3
2
BFR93R Marking: R4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
40
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Document Number 85034
Rev. 3, 20-Jan-99
Symbol
RthJA
Value
450
Unit
K/W
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BFR93/BFR93R
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
DC forward current transfer ratio
Test Conditions
VCE = 20 V, VBE = 0
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
IC = 1 mA, IB = 0
VCE = 5 V, IC = 30 mA
Symbol Min
ICES
ICBO
IEBO
V(BR)CEO 12
hFE
25
Typ
50
Max Unit
100 mA
100 nA
10
mA
V
150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 5 V, IC = 30 mA, f = 500 MHz
VCB = 5 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
VCE = 5 V, IC = 4 mA, ZS = 50 W,
f = 500 MHz
VCE = 5 V, IC = 30 mA, ZL = ZLopt,
f = 500 MHz
VCE = 5 V, IC = 30 mA, ZL = ZLopt,
f = 800 MHz
VCE = 5 V, IC = 30 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50 W
VCE = 5 V, IC = 30 mA, f = 800 MHz
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Symbol
fT
Ccb
Cce
Ceb
F
Min
Typ
5
0.5
0.15
1.1
1.9
Max
Unit
GHz
pF
pF
pF
dB
Gpe
18
dB
Gpe
13
dB
V1 = V2
240
mV
IP3
30
dBm
Document Number 85034
Rev. 3, 20-Jan-99
BFR93/BFR93R
Vishay Telefunken
Common Emitter S–Parameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified
S11
VCE/V
IC/mA
5
10
5
20
30
Document Number 85034
Rev. 3, 20-Jan-99
f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.731
0.474
0.358
0.301
0.293
0.299
0.328
0.360
0.381
0.572
0.344
0.286
0.259
0.258
0.265
0.296
0.327
0.350
0.423
0.272
0.250
0.245
0.241
0.252
0.286
0.317
0.342
0.357
0.254
0.248
0.245
0.247
0.255
0.292
0.325
0.349
S21
ANG
deg
–41.1
–98.0
–132.7
–166.0
179.5
167.4
152.7
138.0
130.1
–56.5
–117.2
–151.4
178.7
167.3
157.5
146.7
133.7
126.2
–73.5
–134.6
–165.9
168.7
158.9
152.0
143.2
130.9
123.6
–84.4
–144.3
–171.9
164.9
156.3
150.3
141.9
130.3
123.6
LIN
MAG
12.40
7.54
5.00
3.30
2.71
2.33
1.93
1.67
1.54
18.26
9.02
5.72
3.69
3.02
2.58
2.13
1.84
1.70
22.83
9.73
6.04
3.88
3.15
2.69
2.22
1.90
1.75
24.36
9.78
6.04
3.86
3.14
2.67
2.20
1.89
1.74
S12
ANG
deg
148.2
112.4
95.7
81.1
73.8
67.0
57.7
49.8
45.1
137.6
103.8
90.4
78.1
71.6
65.5
57.0
49.5
44.8
127.4
98.0
86.8
75.9
69.8
63.9
55.8
48.5
44.0
122.1
95.5
85.2
74.7
68.7
63.0
55.1
47.9
43.1
LIN
MAG
0.031
0.061
0.078
0.104
0.123
0.143
0.173
0.204
0.227
0.026
0.051
0.073
0.106
0.130
0.152
0.186
0.220
0.243
0.022
0.047
0.072
0.109
0.134
0.158
0.193
0.228
0.252
0.021
0.046
0.072
0.110
0.136
0.160
0.195
0.230
0.254
S22
ANG
deg
70.1
55.9
55.9
59.6
61.2
61.8
62.0
61.5
60.6
68.0
62.0
64.7
66.7
66.8
66.0
64.3
62.3
60.5
67.3
68.3
70.5
70.4
69.3
67.7
65.0
62.4
60.2
68.1
71.2
72.6
71.5
70.1
68.2
65.5
62.5
60.3
LIN
MAG
0.891
0.618
0.504
0.458
0.460
0.457
0.442
0.430
0.427
0.796
0.499
0.413
0.392
0.400
0.400
0.387
0.374
0.371
0.688
0.422
0.361
0.356
0.368
0.369
0.355
0.343
0.340
0.629
0.393
0.346
0.347
0.360
0.362
0.347
0.337
0.333
ANG
deg
–17.4
–28.8
–27.6
–24.5
–25.5
–28.5
–34.0
–38.4
–42.5
–23.6
–29.7
–25.5
–21.2
–22.2
–25.6
–31.3
–35.9
–40.1
–28.0
–28.1
–22.3
–17.9
–19.5
–23.5
–29.6
–34.1
–38.5
–29.4
–26.0
–20.0
–16.1
–18.2
–22.5
–28.6
–33.5
–38.0
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BFR93/BFR93R
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb – Collector Base Capacitance ( pF )
P tot – Total Power Dissipation ( mW )
300
250
200
150
100
50
0
0
20
40
60
80
0.6
0.4
0.2
f=1MHz
0
0
5000
3.0
F – Noise Figure ( dB )
3.5
4000
3000
2000
VCE=5V
f=500MHz
12
16
20
2.5
2.0
1.5
1.0
VCE=5V
f=500MHz
ZS=50W
0.5
0
0
0
13588
8
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
6000
1000
4
VCB – Collector Base Voltage ( V )
13589
Figure 1. Total Power Dissipation vs.
Ambient Temperature
f T – Transition Frequency ( MHz )
0.8
100 120 140 160
Tamb – Ambient Temperature ( °C )
96 12159
1.0
8
16
24
32
40
IC – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
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0
12894
5
10
15
20
25
30
IC – Collector Current ( mA )
Figure 4. Noise Figure vs. Collector Current
Document Number 85034
Rev. 3, 20-Jan-99
BFR93/BFR93R
Vishay Telefunken
VCE = 5 V, IC = 30 mA , Z0 = 50 W
S12
S11
j
2.0 GHz
90°
120°
j0.5
1.5
j2
60°
1.0
150°
j0.2
2.0 GHz
ÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁ
0
0.2
1.0
0.5
30°
j5
1
2
0.5
1
5
0.1
180°
0.08
0.16
0°
0.3
–j0.2
–j5
0.1
–150°
–j0.5
–30°
–j2
–120°
–j
13 530
–60°
–90°
13 531
Figure 5. Input reflection coefficient
Figure 7. Reverse transmission coefficient
S21
S22
0.1
j
90°
60°
j0.5
150°
j2
30°
0.3
j0.2
0.5
180°
2.0 GHz
8
16
0°
0
j5
ÁÁÁ
ÁÁÁ
ÁÁ ÁÁ
ÁÁÁ
ÁÁÁ
ÁÁ ÁÁ
0.2
0.5
1
2.0 GHz
0.8
0.1
–j0.2
–150°
1
5
–j5
–30°
–j0.5
–120°
13 532
–90°
Figure 6. Forward transmission coefficient
Document Number 85034
Rev. 3, 20-Jan-99
–j2
–60°
13 533
–j
Figure 8. Output reflection coefficient
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BFR93/BFR93R
Vishay Telefunken
Dimensions of BFR93 in mm
95 11346
Dimensions of BFR93R in mm
95 11347
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Document Number 85034
Rev. 3, 20-Jan-99
BFR93/BFR93R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85034
Rev. 3, 20-Jan-99
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