INFINEON BTS3410G

HITFETÒ BTS 3410 G
Smart Dual Lowside Power Switch
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
· Input Protection (ESD)
On-state resistance
RDS(on)
200
mW
· Thermal shutdown with
Nominal load current
ID(Nom)
1.3
A
Clamping energy
EAS
150
mJ
auto restart
42
V
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET â
In1
Pin 2
Drain1
Pin 7and 8
Logic
Channel 1
Pin 1
Source1
Drain2
In2
Pin 4
Pin 5and 6
Logic
Channel 2
Pin 3
Source2
Complete product spectrum and additional information http://www.infineon.com/hitfet
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BTS 3410 G
Pin Description
Pin Configuration (Top view)
Pin
Symbol
Function
1
S1
Source Channel 1
2
IN1
Input Channel 1
3
S2
4
S1
1·
8
D1
Source Channel 2
IN1
2
7
D1
IN2
Input Channel 2
S2
3
6
D2
5
D2
Drain Channel 2
IN2
4
5
D2
6
D2
Drain Channel 2
7
D1
Drain Channel 1
8
D1
Drain Channel 1
HITFET
Drain1
â
Current
Limitation
In1
P-DSO-8-7
OvervoltageProtection
Pin 7, 8
Vbb
Gate-Driving Unit
Pin 2
M
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Pin 1
Source1
Drain2
Current
Limitation
In2
OvervoltageProtection
Pin 5, 6
Vbb
Gate-Driving Unit
Pin 4
M
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Pin 3
Source2
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BTS 3410 G
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
Drain source voltage for short circuit protection 1) VDS(SC)
Tj = -40...150 °C
Continuous input current1)
Value
Unit
42
V
18
IIN
mA
-0.2V £ VIN £ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | £ 2
°C
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation2)5)
Ptot
0.8
W
EAS
150
mJ
VLD
50
V
2
kV
TA = 85 °C
Unclamped single pulse inductive energy1)
each channel
Load dump protection VLoadDump1)3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
RL = 9 W, VA = 13.5 V
Electrostatic discharge voltage1) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
MSL1
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN EN 60068-1
40/150/56
Thermal resistance
junction - ambient:
per channel
@ 6 cm 2 cooling area2)
RthJA
K/W
one channel on
100
both channels on
160
1not subject to production test, specified by design
2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5 not subject to production test, calculated by R
THJA and Rds(on)
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BTS 3410 G
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
V
-
1.5
10
µA
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current Tj = -40 ... +150°C
IDSS
VDS = 32 V, VIN = 0 V
Input threshold voltage
V
VIN(th)
ID = 0.3 mA, Tj = 25 °C
1.3
1.7
2.2
ID = 0.3 mA, Tj = 150 °C
0.8
-
-
-
10
30
On state input current
IIN(on)
On-state resistance
RDS(on)
mW
VIN = 5 V, ID = 1.4 A, Tj = 25 °C
-
190
240
VIN = 5 V, ID = 1.4 A, Tj = 150 °C
-
350
480
VIN = 10 V, I D = 1.4 A, Tj = 25 °C
-
150
200
VIN = 10 V, I D = 1.4 A, Tj = 150 °C
-
280
400
On-state resistance
µA
RDS(on)
Nominal load current per channel5)
A
ID(Nom)
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C,
one channel on
both channels on
Current limit (active if VDS>2.5 V)2)
ID(lim)
1.3
1.65
-
1
1.3
-
5
7.5
10
VIN = 10 V, VDS = 12 V, t m = 200 µs
1not subject to production test, specified by design
2Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5 not subject to production test, calculated by R
THJA and Rds(on)
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BTS 3410 G
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
45
100
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID:
toff
-
60
100
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
-dVDS/dt on
-
0.4
1.5
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
dVDS/dtoff
-
0.6
1.5
150
175
-
°C
-
10
-
K
µA
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
V/µs
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Tjt
Thermal hysteresis2)
DTjt
Input current protection mode
IIN(Prot)
25
50
300
Input current protection mode
IIN(Prot)
-
40
300
EAS
150
-
-
mJ
VSD
-
1
-
V
Tj = 150 °C
Unclamped single pulse inductive energy2)
each channel
ID = 0.9 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 7 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
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BTS 3410 G
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
I IN
D
Z
D
IN
ID
VDS
Vbb
HITFET
VIN
S
S
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
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BTS 3410 G
1 Overall maximum allowable power
2 On-state resistance
dissipation; P tot = f(TS) resp.
P tot = f(TA) @ R thJA=80 K/W
RON = f(Tj ); ID=1.4A; V IN=10V
3
500
mW
W
max.
T
Ptot
2
T
RDS(on)
400
S
350
300
typ.
A
1.5
250
200
1
150
100
0.5
50
0
-50
-25
0
25
50
75
100
°C
Tj
0
-50
150
-25
0
25
50
75
100 125 °C
3 On-state resistance
4 Typ. input threshold voltage
RON = f(T j); ID= 1.4A; V IN=5V
VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V
500
2
max.
mW
V
400
1.6
typ.
350
300
VGS(th)
RDS(on)
175
Tj
1.4
1.2
250
1
200
0.8
150
0.6
100
0.4
50
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
-25
0
25
50
75
100
°C
150
Tj
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BTS 3410 G
5 Typ. transfer characteristics
6 Typ. short circuit current
I D=f(V IN); VDS=12V; T Jstart=25°C
ID(lim) = f(Tj); VDS=12V
Parameter: VIN
10
8
A
A
8
7
ID(lim)
ID
6
5
6
Vin=10V
5
4
5V
4
3
3
2
2
1
0
0
1
1
2
3
4
5
6
7
8
V
0
-50
10
-25
0
25
50
75
100 125 °C
VIN
7 Typ. output characteristics
8 Typ. off-state drain current
I D=f(V DS); T Jstart=25°C
Parameter: VIN
IDSS = f(Tj)
10
Vin=10V
A
175
Tj
11
µA
7V
max.
9
8
6V
8
5V
6
IDSS
ID
7
4V
7
6
5
5
4
4
3
3
3V
2
2
1
0
0
typ.
1
1
2
3
4
V
0
-50
6
VDS
-25
0
25
50
75
100 125 °C
175
Tj
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BTS 3410 G
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb=12 V, no heatsink
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: Tjstart
Parameter: D=tp/T ; one channel on
10 2
12
K/W
A
-40°C
8
25°C
ZthJA
ID(lim)
10 1
85°C
10 0
6
150°C
4
10 -1
2
0
0
0.5
1
1.5
2
2.5
3
ms
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
10 -2 -6
-5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10 10
4
s
10
4
10
4
tP
t
11 Determination of ID(lim)
12 Typ. transient thermal impedance
ID(lim) = f(t); t m = 200µs
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: TJstart
Parameter: D=tp/T ; both channels on
10 3
12
K/W
A
-40°C
8
ZthJA
ID(lim)
10 2
25°C
10 1
85°C
6
10 0
4
150°C
10 -1
2
0
0
0.1
0.2
0.3
0.4
ms
0.55
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
tP
t
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BTS 3410 G
Package
Ordering Code
P-DSO-8-7
Q67060-S6125-A101
1.27
0.1
0.41 +0.1
-0.05
.01
0.2 +0.05
-0
C
0.2 M A C x8
8
5
Index
Marking 1
4
5 -0.21)
8˚ MAX.
4 -0.21)
1.75 MAX.
0.1 MIN.
(1.5)
0.33 ±0.08 x 45˚
0.64 ±0.25
6 ±0.2
A
Index Marking (Chamfer)
1)
Does not include plastic or metal protrusion of 0.15 max. per side
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BTS 3410G
Revision History :
Previous version :
2004-03-05
2003-04-22
Page
Subjects (major changes since last revision)
3, 6
Footnote 2 extended to Vin<0V, Etot and ∆TjT
3, 4
Footnote 5 implemented to Ptot and ID(nom)
3
ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn.
standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4
3
Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1
3
climatic category changed from DIN IEC 68-1 to DIN EN 60068-1
4
VIN(th) test conditions from ID=0.15mA to ID=0.3mA
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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