HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 28 mΩ • Thermal Shutdown Current limit ID(lim) 25 A • Overload protection Nominal load current ID(ISO) 12 A • Short circuit protection Clamping energy EAS 4000 mJ • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M Drain 2 dv/dt limitation 1 IN ESD Overload protection Current Overvoltage protection lim itation Overtemperature protection Short circuit circuit Short protection protection Source HIT F ET Semiconductor Group Page 1 3 13.07.1998 BTS 141 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Value Drain source voltage VDS 60 Drain source voltage for short circuit protection Continuous input current 1) VDS(SC) 32 Unit V mA IIN -0.2V ≤ VIN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj - 40 ... +150 Storage temperature Tstg - 55 ... +150 Power dissipation Ptot 149 W EAS 4000 mJ 3000 V °C TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 12 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS V VLD VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω, ID=0,5*12A 100 td = 400 ms, RI = 2 Ω, ID= 12A 84 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC 0.84 junction - ambient: RthJA 75 RthJA 45 SMD version, device on PCB: 3) K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical without blown air. Semiconductor Group Page 2 13.07.1998 BTS 141 Electrical Characteristics Symbol Parameter at Tj=25°C, unless otherwise specified Values Unit min. typ. max. 60 - 73 V - - 20 µA 1.3 1.7 2.2 V IIN(1) - 35 100 µA Input current - current limitation mode, ID=ID(lim) : IIN(2) - 270 500 1000 2500 4000 Tj = 25 °C 500 - - Tj = 150 °C 300 - - Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current IDSS VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage VIN(th) ID = 2,7 mA Input current - normal operation, ID <ID(lim) : VIN = 10 V VIN = 10 V Input current - after thermal shutdown, ID =0 A: IIN(3) VIN = 10 V Input holding current after thermal shutdown On-state resistance IIN(H) RDS(on) mΩ ID = 12 A, VIN = 5 V, Tj = 25 °C - 31 34 ID = 12 A, VIN = 5 V, Tj = 150 °C - 52 68 ID = 12 A, VIN = 10 V, Tj = 25 °C - 25 28 ID = 12 A, VIN = 10 V, Tj = 150 °C - 45 56 12 - - On-state resistance RDS(on) Nominal load current (ISO 10483) ID(ISO) A VIN = 10 V, VDS = 0.5 V, TC = 85 °C Semiconductor Group Page 3 13.07.1998 BTS 141 Electrical Characteristics Parameter Symbol at Tj=25°C, unless otherwise specified Values Unit min. typ. max. ID(SCp) - 100 - ID(lim) 25 35 50 ton - 40 100 toff - 70 170 -dVDS /dton - 1 3 dVDS/dtoff - 1 3 150 165 - Characteristics Initial peak short circuit current limit A VIN = 10 V, VDS = 12 V Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C Dynamic Characteristics Turn-on time VIN to 90% ID : µs RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID : RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: V/µs RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V Protection Functions Thermal overload trip temperature Tjt Unclamped single pulse inductive energy EAS °C mJ ID = 12 A, Tj = 25 °C, Vbb = 32 V 4000 - - ID = 12 A, Tj = 150 °C, Vbb = 32 V 900 - - - 1.13 - Inverse Diode Inverse diode forward voltage VSD V IF = 5*12A, tm = 300 µs, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition Semiconductor Group Page 4 13.07.1998 BTS 141 Block Diagramm Terms Inductive and overvoltage output clamp RL D V Z 2 I IN 1 D IN ID VDS Vbb S HITFET S 3 HITFET VIN Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN I D(Lim) ID ESD-ZDI Source t0 ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V. t0 : tm : t1 : t2 : Semiconductor Group Page 5 tm t1 t2 Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. 13.07.1998 BTS 141 Maximum allowable power dissipation On-state resistance Ptot = f(Tc ) RON = f(Tj); ID=12A; VIN=10V BTS 141 60 140 W Ω 120 Ptot 110 RDS(on) 100 40 90 80 max. 30 70 typ. 60 50 20 40 30 10 20 10 0 0 20 40 60 80 100 120 °C 0 -50 150 -25 0 25 50 75 100 °C 150 Tj 150 On-state resistance Typ. input threshold voltage RON = f(Tj); ID= 12A; V IN=5V VIN(th) = f(Tj ); ID =2,7A; VDS=12V 70 2.0 V Ω 1.6 RDS(on) VIN(th) 50 1.4 1.2 max. 40 1.0 typ. 30 0.8 0.6 20 0.4 10 0.2 0 -50 -25 0 25 50 75 100 °C 150 Tj Semiconductor Group 0.0 -50 -25 0 25 50 75 100 °C 150 Tj Page 6 13.07.1998 BTS 141 Typ. transfer characteristics Typ. output characteristic ID = f(VIN); VDS =12V; Tj=25°C ID = f(VDS); Tj=25°C Parameter: VIN 28 30 A ID 10V 6V A 5V ID 20 4V 20 16 15 12 Vin=3V 10 8 5 4 0 0 1 2 3 4 5 V 6 0 0 8 1 2 3 V 5 VDS VIN Transient thermal impedance Z thJC = f(tP) Parameter: D=tP/T 10 1 K/W ZthJC10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Semiconductor Group Page 7 13.07.1998 BTS 141 Application examples: Status signal of thermal shutdown by monitoring input current R St IN µC V IN D HITFET V bb S ∆V V IN thermal shutdown ∆V = RST *IIN(3) Semiconductor Group Page 8 13.07.1998 BTS 141 Package and ordering code all dimensions in mm Ordering Code: Q67060-S6502-A2 Ordering code: Q67060-S6502-A3 Semiconductor Group Page 9 13.07.1998 BTS 141 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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