INFINEON BTS149

HITFET=BTS 149
Smart Lowside Power Switch
Features
Product Summary
• Logic Level Input
Drain source voltage
VDS
60
V
• Input Protection (ESD)
On-state resistance
RDS(on)
18
mΩ
•=Thermal shutdown with latch
Current limit
I D(lim)
30
A
• Overload protection
Nominal load current
I D(ISO)
19
A
• Short circuit protection
Clamping energy
EAS
6000 mJ
• Overvoltage protection
• Current
limitation
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD
D rain
1
dv /d t
lim ita tio n
IN
ESD
O v erloa d
pro te ctio n
C u rre n t
lim ita tio n
O ve rte m pe rature
p ro te ctio n
M
2
O ve rvoltag e
p rotection
Sh
ho
rt circ
c ircu
S
ort
uitit
pprotection
ro te ctio n
S o u rce
3
H IT F E T
Page 1
2004-02-02
BTS 149
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
60
Drain source voltage for short circuit protection
Continuous input current 1)
VDS(SC)
32
Unit
V
mA
IIN
-0.2V ≤ VIN ≤ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | ≤ 2
Operating temperature
Tj
- 40 ... +150
°C
Storage temperature
Tstg
- 55 ... +150
Power dissipation
Ptot
178
W
EAS
6000
mJ
3000
V
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 19 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA =13.5 V
VLD
td = 400 ms, RI = 2 Ω, ID =0,5*19A
110
td = 400 ms, RI = 2 Ω, ID = 19A
92
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
RthJC
0.7
junction - ambient:
RthJA
75
SMD version, device on PCB: 3)
RthJA
45
K/W
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Page 2
2004-02-02
BTS 149
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
60
-
73
V
-
-
25
µA
1.3
1.7
2.2
V
IIN(1)
-
-
100
µA
Input current - current limitation mode, ID=ID(lim): IIN(2)
-
400
1000
1500
3000
6000
Tj = 25 °C
500
-
-
Tj = 150 °C
300
-
-
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
IDSS
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
VIN(th)
ID = 3,9 mA
Input current - normal operation, ID<ID(lim):
VIN = 10 V
VIN = 10 V
Input current - after thermal shutdown, ID=0 A:
VIN = 10 V
IIN(3)
Input holding current after thermal shutdown 1)
IIN(H)
On-state resistance
RDS(on)
mΩ
VIN = 5 V, ID = 19 A, Tj = 25 °C
-
18
22
VIN = 5 V, ID = 19 A, Tj = 150 °C
-
30
44
VIN = 10 V, I D = 19 A, Tj = 25 °C
-
14
18
VIN = 10 V, I D = 19 A, Tj = 150 °C
-
25
36
On-state resistance
RDS(on)
Nominal load current (ISO 10483)
ID(ISO)
19
A
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
Page 3
2004-02-02
BTS 149
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ID(SCp)
-
130
-
ID(lim)
30
40
60
ton
-
40
100
toff
-
70
170
-dVDS/dton
-
1
3
dVDS/dtoff
-
1
3
150
165
-
Characteristics
Initial peak short circuit current limit
A
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID :
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb :
V/µs
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Tjt
Unclamped single pulse inductive energy
EAS
°C
mJ
ID = 19 A, Tj = 25 °C, Vbb = 32 V
6000
-
-
ID = 19 A, Tj = 150 °C, Vbb = 32 V
1800
-
-
-
1.1
-
Inverse Diode
Inverse diode forward voltage
VSD
V
IF = 5*19A, tm = 300 µS, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Page 4
2004-02-02
BTS 149
Block Diagramm
Terms
Inductive and overvoltage output clamp
RL
I IN
1
D
IN
V
Z
D
2
ID
VDS Vbb
S
HITFET
S
VIN
3
HITFET
Short circuit behaviour
Input circuit (ESD protection)
V IN
I D(SCp)
IN
I D(Lim)
ID
ESD-ZD I
Source
ESD zener diodes are not designed
for DC current > 2 mA @ VIN >10V.
t0
tm
t1
t2
t0: Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Page 5
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BTS 149
Maximum allowable power dissipation
On-state resistance
Ptot = f(Tc )
RON = f(Tj ); ID=19A; VIN =10V
BTS 149
40
190
W
mΩ
160
RDS(on)
Ptot
140
120
100
30
25
20
80
max.
15
60
typ.
10
40
5
20
0
0
20
40
60
80
100
120
°C
0
-50
160
-25
0
25
50
75
100
150
Tj
150
On-state resistance
Typ. input threshold voltage
RON = f(Tj ); ID= 19A; V IN=5V
VIN(th) = f(Tj); ID =3,9mA; VDS =12V
45
2.0
mΩ
V
1.6
VIN(th)
35
RDS(on)
°C
30
max.
1.4
1.2
25
1.0
typ.
20
0.8
15
0.6
10
0.4
5
0
-50
0.2
-25
0
25
50
75
100
°C
150
Tj
0.0
-50
-25
0
25
50
75
100
°C
150
Tj
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BTS 149
Typ. transfer characteristics
Typ. output characteristic
ID = f(VIN); VDS =12V; Tj =25°C
ID = f(VDS); Tj =25°C
Parameter: VIN
50
40
A
10V
A
6V
30
25
ID
ID
5V
4V
30
20
20
15
Vin=3V
10
10
5
0
0
1
2
3
4
5
°C
6
0
0
8
Tj
1
2
3
V
5
VDS
Transient thermal impedance
Z thJC = f (t p)
parameter : D = t p/T
10
0
K/W
0.2
-1
0.1
ZthJC
10
D=0.5
0.05
10
0.02
-2
0.01
0.005
10
-3
0
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
10
2
tP
Page 7
2004-02-02
BTS 149
Application examples:
Status signal of thermal shutdown by
monitoring input current
R St
IN
µC
V
IN
D
HITFET
V
bb
S
∆V
V
IN
thermal shutdown
∆V = RST *IIN(3)
Page 8
2004-02-02
BTS 149
Package
Ordering Code
Package
Ordering Code
P-TO220-3-45
Q67060-S6503-A3
P-TO220-3-1
Q67060-S6503-A2
4.4
1.3
0.2
2.4
10.5
9.9
8
1.05
2.54
0.75
0.5
1.5
1.5
3.6
9.2
1)
GPT05164
1) shear and punch direction no burrs this surface
.
Page 9
2004-02-02
BTS 149
Revision History :
Previous version :
Page
4
2004-02-02
2000-05-19
Subjects (major changes since last revision)
ID(lim) from max=55A to max=60A
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
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2004-02-02