HITFET= BTS 3118 N Smart Lowside Power Switch Features Product Summary Logic Level Input Input Protection (ESD) Thermal shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Analog driving possible 42 V Drain source voltage VDS On-state resistance RDS(on) 100 m Nominal load current I D(Nom) 2.17 A Clamping energy EAS 250 mJ 4 3 2 1 VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Page 1 2004-02-02 BTS 3118 N Maximum Ratings at T j = 25°C, unless otherwise specified Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 20 Unit V T j = -40...150°C Continuous input current IIN -0.2V VIN 10V mA no limit | IIN | 2 VIN < -0.2V or VIN > 10V °C Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation Ptot 3.8 W Unclamped single pulse inductive energy 1) EAS 250 mJ Load dump protection VLoadDump2) = V A + VS VLD 50 V 2 kV T C = 85 °C VIN = 0 and 10 V, t d = 400 ms, RI = 2 , RL = 6 , VA = 13.5 V Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - ambient: K/W RthJA @ min. footprint 125 @ 6 cm2 cooling area 3) 72 junction-soldering point: RthJS 17 K/W 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Page 2 2004-02-02 BTS 3118 N Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V Input threshold voltage V VIN(th) ID = 0.6 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.6 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) m VIN = 5 V, ID = 2.17 A, Tj = 25 °C - 90 120 VIN = 5 V, ID = 2.17 A, Tj = 150 °C - 160 240 VIN = 10 V, ID = 2.17 A, Tj = 25 °C - 70 100 VIN = 10 V, ID = 2.17 A, Tj = 150 °C - 130 200 On-state resistance µA RDS(on) Nominal load current A ID(Nom) VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C Current limit (active if VDS>2.5 V)1) 2.17 - - 10 15 20 ID(lim) VIN = 10 V, VDS = 12 V, tm = 200 µs 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. Page 3 2004-02-02 BTS 3118 N Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. t on - 40 100 t off - 70 100 -dV DS/dt on - 0.4 1.5 dV DS/dt off - 0.6 1.5 Dynamic Characteristics Turn-on time VIN to 90% I D: RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V µs V/µs Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Input current protection mode IIN(Prot) 60 120 300 µA Input current protection mode IIN(Prot) - 100 300 EAS 250 - - mJ VSD - 1 - V Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 2.17 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 10.9 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Page 4 2004-02-02 BTS 3118 N Block diagram Inductive and overvoltage output clamp Terms RL V I IN 1 D IN 2 ID VDS D Z Vbb HITFET VIN S S 3 HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Page 5 2004-02-02 BTS 3118 N 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. RON = f(T j); ID=2.17A; V IN=10V Ptot = f(TA) @ R thJA=72 K/W 10 225 m W 8 175 RDS(on) max. 7 Ptot max. 6 150 typ. 125 5 100 4 75 3 2 6cm2 50 1 25 0 -75 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TS ;TA Tj 3 On-state resistance 4 Typ. input threshold voltage RON = f(Tj ); ID= 2.17A; V IN=5V VIN(th) = f(T j); ID = 0.3 mA; V DS = 12V 250 m 2 max. V 1.6 175 typ. 150 VGS(th) RDS(on) 200 1.4 1.2 125 1 100 0.8 75 0.6 50 0.4 25 0.2 0 -50 175 -25 0 25 50 75 100 125 °C 0 -50 175 -25 0 25 50 75 100 °C 150 Tj Tj Page 6 2004-02-02 BTS 3118 N 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(VIN ); VDS=12V; TJstart=25°C I D(lim) = f(Tj); VDS=12V Parameter: VIN 16 24 A A 20 10 ID ID 12 18 8 16 6 4 2 0 1 2 3 4 5 6 7 V 8 14 Vin=10V 12 5V 10 -50 10 -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID=f(VDS ); TJstart =25°C IDSS = f(Tj ) Parameter: VIN 20 11 Vin=10V A µA 7V ID 14 6V 9 5V 8 I DSS 16 4V 12 max. 7 6 10 5 8 4 6 3V 3 4 2 2 0 0 typ. 1 1 2 3 4 V 0 -50 6 VDS -25 0 25 50 75 100 125 °C 175 Tj Page 7 2004-02-02 BTS 3118 N 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Z thJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T 10 2 25 K/W D=0.5 A 15 10 1 25°C 0.2 0.1 ZthJA I D(lim) -40°C 0.05 10 0 0.02 0.01 10 +150°C 10 -1 85°C 5 Single pulse 0 0 1 2 3 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 5 ms s 10 tp t 11 Determination of ID(lim) ID(lim) = f(t); tm = 200µs Parameter: TJstart 25 I D(lim) A -40°C 15 25°C 85°C 10 150°C 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2004-02-02 3 BTS 3118 N Package Ordering Code SOT-223 Q67060-S7216-A001 1.6 ±0.1 6.5 ±0.2 +0.2 acc. to DIN 6784 1 2 3 3.5 ±0.2 4 7 ±0.3 B 15˚ max 0.1 max 3 ±0.1 0.5 min A 0.28 ±0.04 2.3 0.7 ±0.1 4.6 0.25 M A 0.25 M B GPS05560 Page 9 2004-02-02 BTS 3118 N Revision History : Previous version : Page 3 2004-02-02 2002-09-04 Subjects (major changes since last revision) VIN(th) test conditions from ID=0.3mA to ID=0.6mA For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG. Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2004-02-02