MOTOROLA BFR31LT1

Order this document
by BFR30LT1/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel
2 SOURCE
3
3
GATE
1
2
1 DRAIN
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
VDS
25
Vdc
Gate – Source Voltage
VGS
25
Vdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
IGSS
—
0.2
nAdc
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 10 Vdc, VDS = 0)
Gate Source Cutoff Voltage
(ID = 0.5 nAdc, VDS = 10 Vdc)
BFR30
BFR31
VGS(OFF)
—
—
5.0
2.5
Vdc
Gate Source Voltage
(ID = 1.0 mAdc, VDS = 10 Vdc)
BFR30
BFR31
BFR30
BFR31
VGS
– 0.7
—
—
—
– 3.0
– 1.3
– 4.0
– 2.0
Vdc
(ID = 50 mAdc, VDS = 10 Vdc)
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Berquist Company.
Motorola
Transistors, FETs and Diodes Device Data

Motorola, Small–Signal
Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
IDSS
4.0
1.0
10
5.0
mAdc
1.0
1.5
0.5
0.75
4.0
4.5
—
—
40
20
25
15
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
BFR30
BFR31
SMALL– SIGNAL CHARACTERISTICS
Forward Transconductance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
(ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
Output Admittance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
(ID = 200 mAdc, VDS = 10 Vdc)
ť
yfs
mAdc
ť
BFR30
BFR31
BFR30
BFR31
ť
yos
mAdc
ť
BFR30
BFR31
Input Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
Ciss
—
—
5.0
4.0
pF
Reverse Transfer Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
Crss
—
—
1.5
1.5
pF
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
14
VDS = 15 V
VGS = 0
RS = 1 MW
4
VDS = 15 V
VGS = 0
f = 1 kHz
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5
3
2
10
8
6
4
1
2
0
0.1
0.01
1.0
f, FREQUENCY (kHz)
0
100
10
0.001
Figure 1. Noise Figure versus Frequency
1.2
VGS(off)
^ –1.2 V
1.2
VGS(off)
VGS = 0 V
^ –1.2 V
1.0
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
10
Figure 2. Noise Figure versus Source
Resistance
1.0
– 0.2 V
0.8
0.6
– 0.4 V
0.4
– 0.6 V
0
5
10
15
20
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
0.8
VDS = 15 V
0.6
0.4
0.2
– 0.8 V
– 1.0 V
0.2
0
0.01
0.1
1.0
RS, SOURCE RESISTANCE (Megohms)
25
Figure 3. Typical Drain Characteristics
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
– 1.2
– 0.8
– 0.4
VGS, GATE – SOURCE VOLTAGE (VOLTS)
0
Figure 4. Common Source Transfer
Characteristics
3
TYPICAL CHARACTERISTICS
5
5
4
VGS(off)
VGS(off)
^ – 3.5 V
3
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
VGS = 0 V
–1 V
2
–2 V
1
^ – 3.5 V
4
3
VDS = 15 V
2
1
–3 V
0
0
5
10
15
20
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
0
–5
25
Figure 5. Typical Drain Characteristics
^ – 5.8 V
VGS = 0 V
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
10
VGS(off)
–1 V
6
–2 V
4
–3 V
2
0
Figure 6. Common Source Transfer
Characteristics
10
8
–3
–2
–1
–4
VGS, GATE – SOURCE VOLTAGE (VOLTS)
–4 V
VGS(off)
^ – 5.8 V
8
6
VDS = 15 V
4
2
–5 V
0
0
5
10
15
20
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 7. Typical Drain Characteristics
25
0
–7
–6
–5
–4
–3
–2
–1
VGS, GATE – SOURCE VOLTAGE (VOLTS)
ā
0
ā
Figure 8. Common Source Transfer
Characteristics
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
H
D
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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6
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BFR30LT1/D