Order this document by MMBF5457LT1/D SEMICONDUCTOR TECHNICAL DATA N–Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS(r) 25 Vdc IG 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W TJ, Tstg – 55 to +150 °C Reverse Gate–Source Voltage Gate Current CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Junction and Storage Temperature DEVICE MARKING MMBF5457LT1 = 6D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 25 — — Vdc — — — — 1.0 200 OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) IGSS nAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) 0.5 — – 6.0 Vdc Gate Source Voltage (VDS = 15 Vdc, ID = 100 µAdc) VGS — – 2.5 — Vdc IDSS 1.0 — 5.0 mAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Forward Transfer Admittance(2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 — 5000 µmhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yrs| — 10 50 µmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 4.5 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.5 3.0 pF SMALL–SIGNAL CHARACTERISTICS 2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 MW 4 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 3 2 10 8 6 4 1 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency 1.2 VGS(off) ^ –1.2 V 1.2 VGS(off) VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) ^ –1.2 V 1.0 – 0.2 V 0.8 0.6 – 0.4 V 0.4 – 0.6 V 0 5 10 15 20 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) Figure 3. Typical Drain Characteristics 0.8 VDS = 15 V 0.6 0.4 0.2 – 0.8 V – 1.0 V 0.2 2 10 Figure 2. Noise Figure versus Source Resistance 1.0 0 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 25 0 – 1.2 – 0.8 – 0.4 VGS, GATE – SOURCE VOLTAGE (VOLTS) 0 Figure 4. Common Source Transfer Characteristics Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF5457LT1 TYPICAL CHARACTERISTICS 5 5 4 VGS(off) VGS(off) ^ – 3.5 V 3 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V –1 V 2 –2 V 1 ^ – 3.5 V 4 3 VDS = 15 V 2 1 –3 V 0 0 5 10 15 20 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 0 –5 25 Figure 5. Typical Drain Characteristics 10 ^ – 5.8 V VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS(off) –1 V 6 –2 V 4 –3 V 2 0 Figure 6. Common Source Transfer Characteristics 10 8 –3 –2 –1 –4 VGS, GATE – SOURCE VOLTAGE (VOLTS) –4 V VGS(off) ^ – 5.8 V 8 6 VDS = 15 V 4 2 –5 V 0 0 5 10 15 20 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 25 Figure 7. Typical Drain Characteristics 0 –7 –6 –5 –4 –3 –2 –1 VGS, GATE – SOURCE VOLTAGE (VOLTS) ā 0 ā Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBF5457LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 4 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF5457LT1 PACKAGE DIMENSIONS A L 3 B S 1 V STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE 2 G C D H K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 CASE 318–08 ISSUE AE SOT–23 (TO–236AB) Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MMBF5457LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 6 ◊ MMBF5457LT1/D Motorola Small–Signal Transistors, FETs and Diodes Device Data