CD4511BMS CMOS BCD-to-7-Segment Latch Decoder Drivers December 1992 Features Pinout • High Voltage Type (20V Rating) CD4511BMS TOP VIEW • High Output Sourcing Capability up to 25mA • Input Latches for BCD Code Storage B 1 16 VDD C 2 15 f LT 3 14 g BL 4 13 a LE/STROBE 5 12 b • Lamp Test and Blanking Capability • 7 Segment Outputs Blanked for BCD Input Codes > 1001 • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings D 6 11 c A 7 10 d VSS 8 9 e • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC Applications • Driving Common Cathode LED Displays • Multiplexing with Common Cathode LED Displays Functional Diagram • Driving Incandescent Displays • Driving Low Voltage Fluorescent Displays LT Description 3 13 CD4511BMS is a BCD-to-7-Segment latch decoder drivers constructed with CMOS logic and n-p-n bipolar transistor output devices on a single monolithic structure. These devices combine the low quiescent power dissipation and high noise immunity features of Intersil CMOS with n-p-n bipolar output transistors capable of sourcing up to 25mA. This capability allows the CD4511BMS types to drive LED’s and other displays directly. A B BCD INPUTS C D Lamp Test (LT), Blanking (BL), and Latch Enable or Strobe inputs are provided to test the display, shut off or intensity modulate it, and store or strobe a BCD code, respectively. Several different signals may be multiplexed and displayed when external multiplexing circuitry is used. 7 12 1 D E C O D E R L A T C H 2 D R I V E R 11 10 9 15 6 LE/STROBE 14 5 BL a b c d 7 SEGMENT OUTPUTS e f g 4 VSS = 8 VDD = 16 These devices are similar to the type MC14511. The CD4511BMS is supplied in these 16-lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4W H2R H6W 7-Segment Display f a g b e c d CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-1169 File Number 3339 Specifications CD4511BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) VOL15 VOH15 IOL5 IOL10 VDD = 15V, No Load TEMPERATURE MIN MAX UNITS 1 +25oC - 10 µA 2 +125oC - 1000 µA 3 -55oC - 10 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA 1, 2, 3 VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V LIMITS GROUP A SUBGROUPS +25oC, +125oC, -55oC - 50 mV 1 +25oC 14.1 - V 2 +125oC 14.2 V 3 -55oC 14.0 V 1 +25oC 1 - mA 1 +25oC 2.6 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 6.8 - mA Output Drive Voltage LVOH5 VDD = 5V, IOH = -20mA 1 +25oC 3.4 - V 1 +25oC 8.6 - V 1 +25oC 13.7 - V -2.8 -0.7 V 0.7 2.8 V Output Drive Voltage Output Drive Voltage LVOH10 VDD = 10V, IOH = -20mA LVOH15 VDD = 15V, IOH = -20mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B Functional F Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 Input Voltage High (Note 2) VIH VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 12.6V, VOL < 1.5V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 12.6V, VOL < 1.5V 7-1170 V -55oC +25oC, NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. VOH > VOL < VDD/2 VDD/2 +125oC, -55oC - 1.5 V +25oC, +125oC, -55oC 3.5 - V 1, 2, 3 +25oC, +125oC, -55oC - 4 V 1, 2, 3 +25oC, +125oC, -55oC 11 - V 3. For accuracy, voltage is measured differentially to VDD Specifications CD4511BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Data to Output SYMBOL TPHL CONDITIONS (NOTE 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 Propagation Delay Data to Output TPLH Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 1040 ns - 1404 ns - 1320 ns - 1782 ns - 310 ns - 419 ns - 80 ns - 108 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND Output Voltage VOL VDD = 5V, No Load 1, 2 1, 2 1, 2 1, 2 TEMPERATURE -55oC, +25oC MIN MAX UNITS µA - 5 +125oC - 150 µA -55oC, +25oC - 10 µA +125oC - 300 µA - 10 µA +125oC - 600 µA +25oC, +125oC, - 50 mV -55oC, +25oC -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC 4.1 - V 1, 2 +125oC 4.2 - V 1, 2 -55oC 4.0 - V 1, 2 +25oC 9.1 - V 1, 2 +125oC 9.2 - V 1, 2 -55oC 9.0 - V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA +125oC 0.9 - mA -55oC 1.6 - mA Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) VOH IOL5 IOL10 IOL15 VDD = 10V, No Load VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V 1, 2 1, 2 +125oC 2.4 - mA -55oC 4.2 - mA Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC - 3 V Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC +7 - V Propagation Delay Data to Output TPHL 1, 2, 3 +25oC - 420 ns 1, 2, 3 +25oC - 300 ns VDD = 10V VDD = 15V 7-1171 Specifications CD4511BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued) LIMITS PARAMETER SYMBOL Propagation Delay Data to Output TPLH Propagation Delay (BT) TPHL Propagation Delay (BT) Propagation Delay (LT) Propagation Delay (LT) Transition Time Transition Time CONDITIONS VDD = 10V TPLH TTHL TTLH TS TH TW LVOH5 ns 360 ns - 700 ns 1, 2, 3 +25 oC - 350 ns VDD = 15V 1, 2, 3 +25oC - 250 ns VDD = 5V 1, 2, 3 +25oC - 800 ns 1, 2, 3 +25 oC - 350 ns VDD = 15V 1, 2, 3 +25o C - 300 ns VDD = 5V 1, 2, 3 +25oC - 500 ns VDD = 10V 1, 2, 3 +25 oC - 250 ns VDD = 15V 1, 2, 3 +25oC - 170 ns 1, 2, 3 o +25 C - 300 ns VDD = 10V 1, 2, 3 +25o C - 150 ns VDD = 15V 1, 2, 3 +25oC - 100 ns 1, 2, 3 +25oC - 185 ns VDD = 15V 1, 2, 3 +25 oC - 160 ns VDD = 10V 1, 2, 3 +25oC - 60 ns 1, 2, 3 o +25 C - 50 ns VDD = 5V 1, 2, 3 +25 oC - 150 ns VDD = 10V 1, 2, 3 +25oC - 70 ns 1, 2, 3 +25 oC - 40 ns VDD = 5V 1, 2, 3 +25oC - 0 ns VDD = 10V 1, 2, 3 +25oC - 0 ns 1, 2, 3 +25 oC - 0 ns VDD = 5V 1, 2, 3 +25oC - 400 ns VDD = 10V 1, 2, 3 +25oC - 160 ns 1, 2, 3 +25oC - 100 ns VDD = 5V VDD = 10V VDD = 5V, IOH = -10mA VDD = 5V, IOH = -25mA LVOH10 520 - VDD = 5V, IOH = -20mA Output Drive Voltage - o +25oC VDD = 15V Output Drive Voltage 1, 2, 3 +25 C VDD = 15V Minimum Strobe Pulse Width UNITS 1, 2, 3 VDD = 15V Minimum Data Hold Time MAX +25oC 1, 2, 3 VDD = 15V Minimum Data Setup Time MIN VDD = 5V VDD = 10V TPHL TEMPERATURE VDD = 15V VDD = 10V TPLH NOTES VDD = 10V, IOH = -10mA VDD = 10V, IOH = -20mA VDD = 10V, IOH = -25mA 7-1172 o 1, 2 +25 C 3.9 - V 1, 2 +125oC 3.9 - V 1, 2 -55oC 3.8 - V 1, 2 -55oC 3.55 - V 1, 2 +25oC 3.1 - V 1, 2 -55oC 3.4 - V 1, 2 +25oC 9.0 - V 1, 2 +125oC 9.0 - V 1, 2 -55oC 8.85 - V 1, 2 +125oC 8.4 - V 1, 2 -55oC 8.7 - V 1, 2 +25oC 8.3 - V 1, 2 -55oC 8.6 - V Specifications CD4511BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued) LIMITS PARAMETER Output Drive Voltage SYMBOL LVOH15 CONDITIONS VDD = 15V, IOH = -10mA VDD = 15V, IOH = -20mA VDD = 15V, IOH = -25mA Input Capacitance CIN Any Input NOTES TEMPERATURE MIN MAX UNITS 1, 2 +25oC 14.0 - V o 1, 2 +125 C 14.0 - V 1, 2 -55oC 13.9 - V 1, 2 +125oC 13.5 - V 1, 2 -55oC 13.75 - V 1, 2 +25oC 13.5 - V 1, 2 -55 oC 13.65 - V 1, 2 +25o - 7.5 pF C NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 µA 1, 4 +25oC -2.8 -0.2 V VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns Supply Current N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta ∆VTP Functional F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-2 IDD ± 1.0µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A CONFORMANCE GROUP 7-1173 READ AND RECORD Specifications CD4511BMS TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD GROUP A SUBGROUPS 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 READ AND RECORD IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 (Note 1) 9-15 1-8 16 Static Burn-In 2 (Note 1) 9-15 8 1-7, 16 Dynamic BurnIn (Note 1) 9-15 5, 8 3, 4, 16 Irradiation (Note 2) 9-15 8 1-7, 16 9V ± -0.5V 50kHz 25kHz - 1, 2, 7 6 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 7-1174 CD4511BMS Logic Diagram VDD DRIVER LOGIC (BL) IOH * P TG N VSS A P TG N * VOH OUTPUT DRIVERS a P TG N B b P TG N * c P TG N C d P TG N * e P TG N D LE/STROBE f P TG N * + g * VDD * LT * ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. TRUTH TABLE LE BI LT D C B A a b c d e f g X X 0 X X X X 1 1 1 1 1 1 1 X 0 1 X X X X 0 0 0 0 0 0 0 0 1 1 0 0 0 0 1 1 1 1 1 1 0 0 1 1 0 0 0 1 0 1 1 0 0 0 0 0 1 1 0 0 1 0 1 1 0 1 1 0 1 0 1 1 0 0 1 1 1 1 1 1 0 0 1 0 1 1 0 1 0 0 0 1 1 0 0 1 1 0 1 1 0 1 0 1 1 0 1 1 0 1 1 7-1175 DISPLAY Blank CD4511BMS TRUTH TABLE (Continued) LE BI LT D C B A a b c d e f g DISPLAY 0 1 1 0 1 1 0 0 0 1 1 1 1 1 0 1 1 0 1 1 1 1 1 1 0 0 0 0 0 1 1 1 0 0 0 1 1 1 1 1 1 1 0 1 1 1 0 0 1 1 1 1 0 0 1 1 0 1 1 1 0 1 0 0 0 0 0 0 0 0 Blank 0 1 1 1 0 1 1 0 0 0 0 0 0 0 Blank 0 1 1 1 1 0 0 0 0 0 0 0 0 0 Blank 0 1 1 1 1 0 1 0 0 0 0 0 0 0 Blank 0 1 1 1 1 1 0 0 0 0 0 0 0 0 Blank 0 1 1 1 1 1 1 0 0 0 0 0 0 0 Blank 1 1 1 X X X X * * X = Don’t Care * Depends on BCD code previously applied when LE = 0 NOTE: Display is blank for all illegal input codes (BCD > 1001). 700 AMBIENT TEMPERATURE (TA) = +25oC 30 PROPAGATION DELAY TIME (tPLH) (ns) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS SUPPLY VOLTAGE (VDD) = 5V 600 500 400 300 10V 200 15V 100 AMBIENT TEMPERATURE (TA) = +25oC 0 25 50 75 100 LOAD CAPACITANCE (CL) (pF) FIGURE 3. TYPICAL DATA-TO-OUTPUT, LOW-TO-HIGH-LEVEL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE 7-1176 CD4511BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC 600 60 500 TRANSITION TIME (tTLH) (ns) PROPAGATION DELAY TIME (tPLH) (ns) 700 SUPPLY VOLTAGE (VDD) = 5V 400 300 10V 200 15V SUPPLY VOLTAGE (VDD) = 5V 50 10V 40 15V 30 20 100 10 0 25 50 75 25 0 100 FIGURE 4. TYPICAL DATA-TO-OUTPUT, HIGH-TO-LOW-LEVEL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE OUTPUT SOURCE CURRENT (IOH) (mA) TRANSITION TIME (tTHL) (ns) SUPPLY VOLTAGE (VDD) = 5V 400 300 10V 15V 200 100 0 100 25 SUPPLY VOLTAGE (VDD) = 15V 5V 20 15 10 5 FIGURE 7. TYPICAL VOLTAGE DROP (VDD TO OUTPUT) vs OUTPUT SOURCE CURRENT AS A FUNCTION OF SUPPLY 105 8 DYNAMIC POWER DISSIPATION (PD) (µW) 10V 0 0.5 1 1.5 SUPPLY VOLTAGE - OUTPUT DRIVE VOLTAGE (VDD - VOH) (V) FIGURE 6. TYPICAL HIGH-TO-LOW TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE 6 AMBIENT TEMPERATURE (T ) = +25oC A 4 2 104 8 6 4 SUPPLY VOLTS (VDD) = 15V 2 103 8 6 4 2 102 8 6 4 2 10V 10V 5V 101 8 CL = 50pF 6 4 2 CL = 15pF 100 2 100 AMBIENT TEMPERATURE (TA) = +25oC 200 300 400 500 LOAD CAPACITANCE (CL) (pF) 10-2 75 FIGURE 5. TYPICAL LOW-TO-HIGH-LEVEL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC 500 50 LOAD CAPACITANCE (CL) (pF) LOAD CAPACITANCE (CL) (pF) 4 68 10-1 2 4 68 2 4 68 2 100 101 FREQUENCY (f) (kHz) 4 68 102 2 4 68 103 FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION CHARACTERISTICS 7-1177 CD4511BMS Applications Interfacing with Various Displays VDD VDD LT A B C D LE BCD INPUTS LATCH 8 DECODER a + VOH - BL VSS TO VDD VDD ISEG R b R c R d R e R f R g R VDF + CD4511BMS VSS LED 7-SEGMENT DISPLAY DUTY CYCLE = 100% ISEG = IDIODEAVG. = 20mA AT LUMINOUS INTENSITY/SEGMENT = 250µcd R= VOH - VDF ISEG FIGURE 9. DRIVING COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7740) VDD A D LE C d D e LE f g BL VDD b B c CD4511BMS C a A b B VDD = 5V LT a VDD BL 1.6V AC OR DC VSS c CD4511BMS LT d e VDD f g R≈ 400Ω VDD R ≈ 400Ω VSS A MEDIUM BRIGHTNESS INTENSITY DISPLAY CAN BE OBTAINED WITH LOW VOLTAGE FLUORESCENT DISPLAYS SUCH AS THE TUNG-SOL DIGIVAC S/G* SERIES 2 OF 7 SEGMENTS SHOWN CONNECTED RESISTORS R FROM VDD TO EACH 7-SEGMENT DRIVER OUTPUT ARE CHOSEN TO KEEP ALL NUMITRON SEGMENTS SLIGHTLY ON AND WARM * Trademark Tung-Sol Division Wagner Electric Co. FIGURE 10. DRIVING LOW VOLTAGE FLOURESCENT DISPLAYS FIGURE 11. DRIVING INCANDESCENT DISPLAYS (RCA NUMITRON DR2000 SERIES DISPLAYS) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 1178 CD4511BMS Applications Interfacing with Various Displays (Continued) VDD LT CD4511BMS B C TRANSISTORS T1 - T4 (2N3053 OR 2N2102) HAVE IC MAX. RATING > 7 x ISEG D LE DUTY CYCLE = 25% VDD ISEG = (IDIODEAVG) x 4 R= a b c d e f g A MULTIPLEXING SCHEME SHOWING 2 OF 7 SEGMENTS CONNECTED (VOH - VDF-VCE) ISEG 2 ISEG R + - VOH BL VSS 1 R VO1 12 2 Q0 4 V02 CD4024BMS VO3 11 3 5 9 1 Q1 CD4555BMS Q2 Q3 7 + VDF + VCE - T1 VSS T2 VSS 6 T3 VSS T4 VSS VSS FIGURE 12. MULTIPLEXING WITH COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7404 4 CHARACTER DISPLAY OR 4 DISCRETE MONOSANTO MAN 3 DISPLAYS) Waveforms tr 20ns tf VDD 90% 50% 10% DATA INPUT tTHL LE DATA INPUTS 0 tTLH 50% 10% 20ns tHOLD OUTPUT tPHL VDD 0 FOR SETUP FOR HOLD OUTPUT 0 tr, tf = 20ns 0 20ns 20ns STROBE 90% 50% 10% tr, tf = 20ns tPLH 0 VDD 50% VDD 90% 50% 10% VDD 90% 50% 10% tSU 90% tW FIGURE 13. DYNAMIC WAVEFORMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 7-1179 0.0198 inches - 0.0218 inches