Formosa MS Chip Silicon Rectifier HFM301 THRU HFM307 Ultra fast recovery type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276(7.0) 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) Exceeds environmental standards of MIL-S-19500 / 228 0.244(6.2) 0.228(5.8) Low leakage current. 0.087(2.2) 0.071(1.8) 0.032(0.8) Typ. 0.040(1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.00585 ounce, 0.195 gram 0.040 (1.0) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 55 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 3.0 A IFSM 100 A 10.0 uA 300 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS *2 VR *3 (V) (V) (V) HFM301 H31 50 35 50 HFM302 H32 100 70 100 HFM303 H33 200 140 200 HFM304 H34 300 210 300 HFM305 H35 400 280 400 HFM306 H36 600 420 600 HFM307 H37 800 560 800 VF *4 (V) T RR *5 (nS) uA o 15 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w 70 -55 pF +150 o C Operating temperature ( o C) 1.0 *1 Repetitive peak reverse voltage 50 -55 to +150 1.3 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.7 70 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM301 THRU HFM307) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE CHARACTERISTICS 1.0 7 FM 30 5 H FM 30 6~ H 4~ HF M3 0 HF M3 0 HF M3 0 .1 3.6 3.0 2.4 Single Phase 1.8 Half Wave 60Hz Resistive Or Inductive Load 1.2 0.6 0 0 20 40 Tj=25 C .01 80 100 120 140 160 180 200 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWAARD SURGE CURRENT,(A) .001 .4 60 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 100 80 60 8.3ms Single Half Tj=25 C Sine Wave 40 JEDEC method 20 0 1 5 (+) 1W NONINDUCTIVE 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 1~ HF M3 0 3 AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 150 125 100 75 50 25 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100