SMP30-xxx ® TELECOM EQUIPMENT PROTECTION: TRISIL™ FEATURES ■ ■ ■ ■ ■ ■ Bidirectional crowbar protection Voltage range from 62V to 270V Low capacitance from 12pF to 20pF typ.@ 50V Low leakage current: IR = 2µA max. Holding current: IH = 150 mA min. Repetitive peak pulse current: IPP = 30 A (10/1000 µs) SMA (JEDEC DO-214AC) MAIN APPLICATIONS Telecommunication equipment such as Analog and digital line cards (xDSL, T1/E1, ISDN...). Terminals (phone, fax, modem...) and central office equipment. ■ SCHEMATIC DIAGRAM ■ DESCRIPTION The SMP30-xxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. The package / die size ratio has been optimized by using the SMA package. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459 and FCC part 68. Trisils have UL94 V0 resin approved. SMA package is JEDEC registred. (Trisils are UL 497B approved - file: E136224). November 2002 - Ed: 4B 1/8 SMP30-xxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS Standard Peak Surge Voltage (V) Voltage Waveform (µs) Required peak current (A) Current Waveform (µs) Minimum serial resistor to meet standard (Ω) GR-1089 Core First level 2500 1000 2/10 10/1000 500 100 2/10 10/1000 20 24 GR-1089 Core Second level 5000 2/10 500 2/10 40 GR-1089 Core Intra-building 1500 2/10 100 2/10 0 ITU-T-K20 / K21 6000 1500 10/700 150 37.5 5/310 110 0 ITU-T-K20 (IEC61000-4-2) 6000 8000 1/60 ns VDE0433 4000 2000 10/700 100 50 5/310 60 10 VDE0878 4000 2000 1.2/50 100 50 1/20 18 0 IEC61000-4-5 4000 4000 10/700 1.2/50 100 100 5/310 8/20 60 18 FCC Part 68, lightning surge type A 1500 800 10/160 10/560 200 100 10/160 10/560 26 15 FCC Part 68, lightning surge type B 1000 9/720 25 5/320 0 ESD contact discharge ESD air discharge 0 0 THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Parameter Junction to ambient with recommended footprint Junction to leads ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol 2/8 Parameter VRM Stand-off voltage IRM Leakage current at VRM VR Continuous reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance Value Unit 120 °C/W 30 °C/W SMP30-xxx ABSOLUTE RATINGS (Tamb = 25°C) Symbol Parameter Value Unit Repetitive peak pulse current: 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs 30 70 35 40 45 70 100 8/20 µs 2.5 kA Non repetitive surge peak on-state current (Sinusoidal) t = 20ms t = 16.6ms t = 0.2s t = 2s 15 17 8.5 4.5 A I²t I²t value for fusing t = 16.6ms t = 20ms 2.1 2.25 A²s TL Maximum lead temperature for soldering during 10 s. 260 °C Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C °C IPP IFS ITSM Fail safe mode: maximum current Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 10/1000µs tr = 10µs A % IPP 100 50 0 tr tp t tp = 1000µs 3/8 SMP30-xxx ELECTRICAL PARAMETERS (Tamb = 25°C) IRM @ VRM max Type IR @ VR MAX Note 1 µA V µA STATIC VBO @ IBO max Note 3 DYNAMIC VBO @ IBO max Note 2 V V mA V IH min C typ. C typ. Note 4 Note 5 Note 6 mA mA pF pF SMP30-62 56 62 85 82 150 20 40 SMP30-68 61 68 93 90 150 20 40 SMP30-100 90 100 135 133 150 16 35 SMP30-120 108 120 160 160 150 16 30 130 173 150 14 30 180 235 150 14 25 SMP30-130 SMP30-180 117 2 162 50 173 800 800 240 SMP30-200 180 200 262 267 150 12 25 SMP30-220 198 220 285 293 150 12 25 SMP30-240 216 240 300 320 150 12 25 SMP30-270 243 270 350 360 150 12 25 Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: IR measured at VR guarantee VBRmin ≥ VR See functional breakover voltage test circuit 1. See test circuit 2. See functional holding current test circuit 3. VR = 50V bias,VRMS = 1V, F = 1MHz. VR = 2V bias, VRMS = 1V, F = 1MHz Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial = 25°C) Fig. 2: On-state voltage versus on-state current (typical values). ITSM(A) IT(A) 20 50 F=50Hz Tj=25°C 20 15 10 10 5 5 2 t(S) 0 1E-2 4/8 1E-1 1E+0 VT(V) 1E+1 1E+2 1E+3 1 0 1 2 3 4 5 6 7 8 9 10 SMP30-xxx Fig. 3: Relative variation of holding current versus junction temperature. Fig. 4: Relative variation of breakover voltage versus junction temperature. IH[Tj] / IH[Tj=25°C] VBO[Tj] / VBO[Tj=25°C] 2.0 1.10 1.8 1.6 1.05 1.4 1.2 1.0 1.00 270 V 0.8 0.6 0.95 0.4 62 V 0.2 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). -20 0 20 40 60 80 100 Fig. 6: Relative variation of thermal impedance versus pulse duration. IRM[Tj] / IRM[Tj=25°C] 2000 1000 Tj(°C) 0.90 -40 Zth(j-a)(°C/W) VR=VRM 1E+2 Zth(j-a) 100 1E+1 10 1E+0 Tj(°C) 1 25 50 tp(s) 75 100 125 1E-1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values). C[VR] / C[VR=50V] 2.5 Tj=25°C F=1MHz VRMS=1V 2.0 1.5 1.0 0.5 VR(V) 0.0 1 2 5 10 20 50 100 300 5/8 SMP30-xxx TEST CIRCUIT 1 FOR DYNAMIC IBO and VBO PARAMETERS 100 V / µs, di/dt < 10 A / µs, Ipp = 30A 2Ω 83 Ω 45 Ω 10 µF U 66 Ω 46 µH 0.36 nF 470 Ω Key Tek ‘System 2’ generator with PN246I module 1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A 250 Ω 26 µH 60 µF U 47 Ω 46 µH 12 Ω Key Tek ‘System 2’ generator with PN246I module TEST CIRCUIT 2 for IBO AND VBO PARAMETERS. K ton = 20ms R1 = 140Ω R2 = 240Ω 220V 50Hz DUT Vout 1/4 IBO measurement TEST PROCEDURE : ■ ■ 6/8 Pulse test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. VBO measurement SMP30-xxx TEST CIRCUIT 3 for IH PARAMETERS. R Surge generator D.U.T VBAT = - 48 V This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within 50 ms max. PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AC) DIMENSIONS E1 REF. D E A1 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 A2 C L b 1.45 (0.057) 2.40 (0.094) (0.065) 1.65 FOOT PRINT in millimeters (in inches) 1.45 (0.057) 7/8 SMP30-xxx ORDER CODE SMP 30 - xx Trisil™ Surface Mount Voltage IPP = 30A ORDERING INFORMATION Part number Marking SMP30-62 QA4 SMP30-68 QAB SMP30-100 QAC SMP30-120 QAD SMP30-130 QAE SMP30-180 QAF SMP30-200 QAG SMP30-220 QAH SMP30-240 QAI SMP30-270 QAJ Package Weight Base qty Delivery mode SMA 0.06 g 5000 Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8