SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310Q S2 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1 0.8±0.1 0.2 Min. 1.6±0.1 KSD-E002-001 1 PIN Connections 1. Anode 2. Cathode 1 SDB310Q Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit VR 30 V 0.5 A IF 0.2 A IFSM 2 A Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 ~ 150 °C Reverse voltage Repetitive peak forward current IFRM Forward current Non-repetitive peak forward current(10ms) * * : δ = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit rating×1.5 Electrical Characteristics Characteristic Ta=25° C Symbol Test Condition Min. Typ. Max. Unit V Forward voltage 1 VF(1) IF =10mA - - 0.4 Forward voltage 2 VF(2) IF =30mA - - 0.5 V Reverse current IR VR =30V - - 1 µA Total capacitance CT VR =1V, f=1MHz - - 10 pF Reverse recovery time trr IF = IR =10mA, IRR = 1mA, RL=100Ω - - 5 ns KSD-E002-001 2 SDB310Q Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-E002-001 3