AUK SDB310Q

SDB310Q
Semiconductor
Schottky Barrier Diode
Features
• Low power rectified
• Silicon epitaxial type
• High reliability
Ordering Information
Type No.
Marking
SDB310Q
S2
Package Code
SOD-523
Outline Dimensions
unit : mm
1.2±0.1
2
1
0~0.1
2
0.6±0.1
0.8±0.1
0.2 Min.
1.6±0.1
KSD-E002-001
1
PIN Connections
1. Anode
2. Cathode
1
SDB310Q
Absolute maximum ratings
Ta=25°C
Characteristic
Symbol
Ratings
Unit
VR
30
V
0.5
A
IF
0.2
A
IFSM
2
A
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ~ 150
°C
Reverse voltage
Repetitive peak forward current
IFRM
Forward current
Non-repetitive peak forward current(10ms)
*
* : δ = D/T =0.33
(T<1S)
* : Unit ratings. Total rating=Unit rating×1.5
Electrical Characteristics
Characteristic
Ta=25° C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
Forward voltage 1
VF(1)
IF =10mA
-
-
0.4
Forward voltage 2
VF(2)
IF =30mA
-
-
0.5
V
Reverse current
IR
VR =30V
-
-
1
µA
Total capacitance
CT
VR =1V, f=1MHz
-
-
10
pF
Reverse recovery time
trr
IF = IR =10mA, IRR = 1mA, RL=100Ω
-
-
5
ns
KSD-E002-001
2
SDB310Q
Electrical Characteristic Curves
Fig. 1 IF-VF
Fig. 2 IR -VR
Fig. 3 CT-VR
KSD-E002-001
3