SUD494J Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns(Typ.) Small total capacitance : CT=2.2pF(Typ.) Three SDS914 chips in SOT-363 package Ordering Information Type NO. Marking SUD494J Package Code EX SOT-363 Outline Dimensions unit : mm 2.1 BSC 5 3 4 0.25 Min. 3 2 4 5 1 2.0 BSC 2 1.30 BSC 6 0.1~0.25 1 0~0.1 0.9±0.1 0.15~0.30 1.25 BSC KSD-6002-001 6 PIN Connections 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Anode 6. Anode 1 SUD494J Absolute maximum ratings Characteristic Ta=25°C Symbol Ratings Unit Maximum(peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum(peak) forward current IFM 300 mA Average forward current IO 100 mA IFSM 2 A Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 ~ 150 °C Surge current(10ms) Ta=25°°C Electrical Characteristics Characteristic Forward voltage Symbol Test Condition Min. Typ. Max. VF(1) IF=1mA - 0.6 - VF(2) IF=10mA - 0.7 - VF(3) IF=100mA - 0.9 1.2 Unit V Reverse current IR VR=80V - - 0.5 µA Total capacitance CT VR=0, f=1MHz - 2.2 4.0 pF Reverse recovery time trr IF=10mA - 1.6 4.0 ns KSD-6002-001 2 SUD494J Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR-VR Fig. 3 CT-VR Fig. 4 trr-IF Fig. 5 Reverse recovery time(trr) test circuit KSD-6002-001 3