SDB310D Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310D Package Code B1 SOD-323 Outline Dimensions unit : mm 1.15~1.35 0.35 Max. 2.35~2.65 1.60~1.80 2 1 0.80~1.00 0.19 Max. CATHODE MARK 0.10 Max. 0.20 Min. KSD-C002-000 2 1 PIN Connections 1. Anode 2. Cathode 1 SDB310D Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit VR 30 V IFRM* 0.5 A IF 0.2 A IFSM 2 A Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 ~ 150 °C Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) * : δ = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit rating×1.5 Electrical Characteristics Characteristic Ta=25°C Symbol Test Condition Min. Typ. Max. Unit Forward voltage 1 VF(1) IF=10mA - - 0.4 V Forward voltage 2 VF(2) IF=30mA - - 0.5 V Reverse current IR VR=30V - - 1 µA Total capacitance CT VR=1V, f=1MHz - - 10 pF Reverse recovery time trr IF= IR=10mA, IRR= 1mA, RL=100Ω - - 5 ns KSD-C002-000 2 SDB310D Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-C002-000 3