Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code (tape and reel) BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol BAS 19 Values BAS 20 BAS 21 Unit Reverse voltage VR 100 150 200 Peak reverse voltage VRM 120 200 250 Forward current IF 250 Peak forward current IFM 625 Total power dissipation, TS = 70 ˚C Ptot 350 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 300 Junction - soldering point Rth JS ≤ 230 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 07.94 BAS 19 … BAS 21 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 120 200 250 – – – – – – – – – – 1 1.25 – – – – 100 100 nA µA DC characteristics Breakdown voltage1) I(BR) = 100 µA V V(BR) BAS 19 BAS 20 BAS 21 Forward voltage IF = 100 mA IF = 200 mA VF Reverse current VR = VR max VR = VR max; Tj = 150 ˚C IR AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CD – – 5 pF Reverse recovery time IF = 30 mA, IR = 30 mA, RL = 100 Ω measured at IR = 3 mA trr – – 50 ns Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω 1) Oscillograph: Pulse test: tp ≤ 300 µs, D = 2 %. Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF BAS 19 … BAS 21 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) Forward voltage VF = f (TA) Semiconductor Group 3 BAS 19 … BAS 21 Reverse voltage VR = f (TA) Semiconductor Group Peak forward current IFM = f (t) 4