Silicon Switching Diode Array ● Bridge configuration ● High-speed switch diode chip BGX 50 A Type Marking Ordering Code (tape and reel) BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 50 V Peak reverse voltage VRM 70 Forward current IF 140 mA Total power dissipation, TS = 74 ˚C Ptot 210 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 640 Junction - soldering point Rth JS ≤ 360 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BGX 50 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. – – 1.3 DC characteristics Forward voltage per diode IF = 100 mA VF Reverse current per diode VR = 50 V VR = 50 V, TA = 150 ˚C IR V µA – – – – 0.2 100 AC characteristics Diode capacitance VR = 0, f = 1 MHz CD – – 1.5 pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr – – 6 ns Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF BGX 50 A Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) TA = 25 ˚C Semiconductor Group 3 BGX 50 A Forward voltage VF = f (TA) Semiconductor Group 4