INFINEON Q68000

Silicon Switching Diode Array
BAV 70
For high-speed switching
● Common cathode
●
Type
Marking
Ordering Code
(tape and reel)
BAV 70
A4s
Q68000-A6622
Pin Configuration
Package1)
SOT-23
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
Reverse voltage
VR
70
V
Peak reverse voltage
VRM
70
Forward current
IF
200
mA
Surge forward current, t = 1 µs
IFS
4.5
A
Total power dissipation, TS = 35 ˚C
Ptot
250
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
600
Junction - soldering point
Rth JS
≤
460
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2.
Semiconductor Group
1
5.91
BAV 70
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
70
–
–
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF
Reverse current
VR = 70 V
VR = 25 V, TA = 150 ˚C
VR = 70 V, TA = 150 ˚C
IR
V
mV
–
–
–
–
–
–
–
–
715
855
1000
1250
µA
–
–
–
–
–
–
2.5
30
50
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CD
–
–
1.5
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
trr
–
–
6
ns
Test circuit for reverse recovery time
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
Semiconductor Group
2
R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
BAV 70
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF)
TA = 25 ˚C
Peak forward current IFM = f (t)
TA = 25 ˚C
Semiconductor Group
3
BAV 70
Forward voltage VF = f (TA)
Semiconductor Group
4