Silicon Switching Diode ● SMBD 6050 For high-speed switching applications Type Marking Ordering Code (tape and reel) SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 54 ˚C Ptot 370 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 330 Junction - soldering point Rth JS ≤ 260 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBD 6050 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 70 – – DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) Forward voltage IF = 1 mA IF = 100 mA VF Reverse current VR = 50 V V mV 550 850 – – 700 1100 IR – – 100 nA Diode capacitance VR = 0, f = 1 MHz CD – – 2.5 pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr – – 10 ns AC characteristics Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF SMBD 6050 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) TA = 25 ˚C Semiconductor Group 3 SMBD 6050 Forward voltage VF = f (TA) Semiconductor Group 4