2N7086 MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL ENHANCEMENT MODE TRANSISTOR V(BR)DSS ID(A) RDS(on) 12.07 (0.500) 19.05 (0.750) 1 2 3 200V 14A Ω 0.16Ω 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC FEATURES • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS TO–257AB Metal Package • SCREENING OPTIONS AVAILBLE Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage 200V VGS Gate – Source Voltage ±20V ID Continuous Drain Current IDM Pulsed Drain Current 1 PD Power Dissipation TC = 25°C 14A TC = 100°C 8.5A 56A TC = 25°C 60W TC = 100°C 23W TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature (1/16” from case for 10 sec.) Semelab plc. –55 to 150°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 300°C Prelim. 1/99 2N7086 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. STATIC ELECTRICAL RATINGS BV(BR)DSS Drain–Source Breakdown Voltage VGS = 0 ID = 250µA 200 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2 IGSS Gate – Body Leakage VDS = 0 VGS = ±20V IDSS Zero Gate Voltage Drain Current ID(on) RDS(on) gfs On–State Drain Current1 VDS = 10V VGS = 10V Static Drain – Source On–State VGS = 10V Forward Transconductance1 ID = 8.5A TJ = 125°C VDS = 15V IDS = 8.5A Unit 4 V ±100 nA 25 TJ = 125°C Resistance Max. V VDS = 160V VGS = 0 1 Typ. 250 14 µA A 0.14 0.16 0.25 0.30 5.0 Ω S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 1550 Coss Output Capacitance VDS = 25V 500 Crss Reverse Transfer Capacitance f = 1MHz 220 Qg Qgs Qgd td(on) tr Total Gate Charge2 Gate Source Gate Drain Charge2 Charge2 Turn–On Delay Rise Time2 Time2 td(off) Turn–Off Delay tf Fall Time2 Time2 pF 30 44 77 4.6 10 15 13 26 35 10 30 VGEN =10V 60 100 RL = 7.1Ω 30 80 RG = 4.7Ω 40 95 VDS = 0.5 x V(BR)DSS VGS = 10V ID = 14A VDD = 100V ID = 14A nC ns SOURCE – DRAIN DIODE CHARACTERISTICS IS 114 Continuous Current 3 ISM Pulse Current VSD Forward Voltage IF = IS trr Reverse Recovery Time IF = IS 150 Qrr Reverse Recovery Charge dIF/dt = 100A/µs 0.5 56 VGS = 0 A 2.0 V 650 ns µC 1Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% of Operating Temperature 3Pulse width Limited by maximum Junction Temperature 2Independent THERMAL RESISTANCECHARACTERISTICS Parameter Min. Typ. Max. RthJC Thermal resistance Junction-Case 2.1 RthJA Thermal resistance Junction-ambient 80 RthCS Thermal resistance Junction-ambient Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Unit K/W 1.0 Prelim. 1/99