2N7002CSM MECHANICAL DATA Dimensions in mm (inches) 0.31 rad. (0.012) 3 FEATURES 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004) • V(BR)DSS = 60V A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (0.055) max. Ω • RDS(ON) = 7.5Ω • ID = 0.115A SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Gate PAD 2 – Source PAD 3 – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±40V ID Drain Current @ TCASE = 25°C ±0.115A ID Drain Current @ TCASE = 100°C ±0.073A IDM Pulsed Drain Current * PD Power Dissipation @ TCASE = 25°C 200mW PD Power Dissipation @ TCASE = 100°C 80mW Tj Operating Junction Temperature Range –55 to 150°C Tstg Storage Temperature Range –55 to 150°C 0.8A * Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 7/98 2N7002CSM ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS V(BR)DSS Gate – Source Breakdown Voltage VGS = 0V ID = 10µA 60 70 VGS(th) Gate Threshold Voltage VDS = VGS ID = 0.25mA 1 2.15 IGSS Gate – Body Leakage Current VGS = ±20VVDS = 0V IDSS Zero Gate Voltage Drain Current ID(on)* On–State Drain Current VDS = 60V ±100 VGS = 0V 1 TCASE = 125°C VDS≥2VDS(ON) VGS = 10V 500 500 VGS = 5V RDS(on)* Drain – Source On Resistance VDS(on)* Drain – Source On Voltage ID = 50mA 2.5 TCASE = 125°C VGS = 10V 1000 5 7.5 9 13.5 2.5 7.5 TCASE = 125°C 4.4 13.5 VGS = 5V ID = 50mA 0.25 0.375 1.25 3.75 2.2 6.75 ID = 0.5A TCASE = 125°C gFS* Forward Transconductance VDS = 10V ID = 0.2A gOS* Common Source Output Conductance VDS = 5V ID = 50mA 80 nA µA mA ID = 0.5A VGS = 10V V Ω V 170 ms 500 µs DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 25V 16 50 Coss Output Capacitance VGS = 0V 11 25 Crss Reverse Transfer Capacitance f = 1MHz 2 5 7 20 7 20 Typ. Max. Unit 625 °C/W pF SWITCHING CHARACTERISTICS tON tOFF Turn–On Time Turn–Off Time VDD = 30V VGEN = 10V RL = 150Ω RG = 25Ω ns ID = 0.2A * Pulse Test: PW = 80 µs , δ ≤ 1% Parameter RθJA Min. Thermal Resistance, Junction to Ambient Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 7/98