2N6659 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators • Converters 5.08 (0.200) typ. 2.54 (0.100) 2 1 • Motor Drivers 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45˚ TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 3 – Drain PIN 2 – Gate CASE – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS Drain – Source Voltage 35V VGS Gate – Source Voltage ±20V ID Drain Current @ TCASE = 25°C 1.4A ID Drain Current @ TCASE = 100°C 1A IDM Pulsed Drain Current * PD Power Dissipation @ TCASE = 25°C 6.25W PD Power Dissipation @ TCASE = 100°C 2.5W Tj Operating Junction Temperature Range –55 to 150°C Tstg Storage Temperature Range –55 to 150°C TL Lead Temperature (1/16” from case for 10 sec.) 3A 300°C * Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 4/00 2N6659 ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter Test Conditions STATIC CHARACTERISTICS Min. Typ. V(BR)DSS Gate – Source Breakdown Voltage VGS = 0V ID = 10mA 35 70 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1mA 0.8 1.6 IGSS Gate – Body Leakage Current IDSS Zero Gate Voltage Drain Current VGS = ±15V VDS = 0V TCASE = 125°C VDS = 90V VGS = 0V VDS = 72V VGS = 0V On–State Drain Current RDS(on)* Drain – Source On Resistance VDS(on)* Drain – Source On Voltage VDS = 15V VGS = 10V ±500 10 500 VGS = 5V ID = 0.3A 1.5 VGS = 10V 1.8 1.8 5 1.3 1.8 TCASE = 125°C 2.6 3.6 VGS = 5V ID = 0.3A 0.54 1.5 1.3 1.8 2.6 3.6 ID = 1A TCASE = 125°C gFS* Forward Transconductance VDS = 10V ID = 0.5A gOS* Common Source Output Conductance VDS = 10V ID = 0.1A Small Signal Drain – Source VGS = 10V ID = 1A On Resistance f = 1kHz 170 nA mA A ID = 1A VGS = 10V Unit V 2 ±100 TCASE = 125°C ID(on)* Max. 350 W V ms ms 1100 DYNAMIC CHARACTERISTICS RDS(on) Cds Drain – Source Capacitance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 24V VGS = 0V f = 1MHz 1.3 1.8 30 40 35 50 28 40 2 10 8 10 9 10 W pF SWITCHING CHARACTERISTICS tON Turn–On Time tOFF Turn–Off Time VDD = 25V RL = 23W VGEN = 10V RG = 25W ID = 1A ns * Pulse Test: tp £ 80 ms , d £ 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 4/00