TSM2312 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 5.0A = 33mΩ RDS (on), Vgs @ 2.5V, Ids @ 4.0A = 40mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities High density cell design for ultra low on-resistance Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2312CX Absolute Maximum Rating (Ta = 25℃ Packing Tape & Reel Package SOT-23 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ±8 V ID 5 A IDM 15 A PD 1.25 W Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C Ta = 75 oC Operating Junction Temperature 0.8 +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Unit TL 5 S Rθja 100 TJ Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM2312 1-1 2003/12 rev. A o C/W Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- Drain-Source On-State VGS = 4.5V, ID = 5.0A RDS(ON) -- 25 33 mΩ Resistance Drain-Source On-State VGS = 2.5V, ID = 4.0A RDS(ON) -- 35 40 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.45 -- -- V Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 8V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VDS ≧ 10V, VGS = 4.5V ID(ON) 15 -- -- A Forward Transconductance VDS = 5V, ID = 5.0A gfs -- 20 -- S Total Gate Charge VDS = 10V, ID = 3.6A, Qg -- 11 14 Gate-Source Charge VGS = 4.5V Qgs -- 1.4 -- Qgd -- 2.2 -- Resistance Dynamic Gate-Drain Charge Turn-On Delay Time VDD = 10V, RL = 10Ω, td(on) -- 15 25 Turn-On Rise Time ID = 1A, VGEN = 4.5V, tr -- 40 60 Turn-Off Delay Time RG = 6Ω td(off) -- 48 70 tf -- 31 45 Turn-Off Fall Time nC nS Input Capacitance VDS = 10V, VGS = 0V, Ciss -- 900 -- Output Capacitance f = 1.0MHz Coss -- 140 -- Crss -- 100 -- IS -- -- 1.6 A VSD -- 0.75 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2312 2-2 2003/12 rev. A SOT-23 Mechanical Drawing A B F A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 2.91 0.113 0.115 0.39 0.42 0.015 0.017 1.78 2.03 0.070 0.080 0.51 0.61 0.020 0.024 1.59 1.66 0.063 0.065 F G 1.04 0.07 DIM E G D TSM2312 1.08 0.09 0.041 0.003 C 3-3 2003/12 rev. A 0.043 0.004