Order this document by 4N38/D SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator [CTR = 20% Min] *Motorola Preferred Device The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. STYLE 1 PLASTIC • Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. 6 Applications • General Purpose Switching Circuits 1 STANDARD THRU HOLE CASE 730A–04 • Interfacing and coupling systems of different potentials and impedances • Monitor and Detection Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating SCHEMATIC Symbol Value Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 80 mA IF(pk) 3 A PD 150 mW 1.41 mW/°C Forward Current — Pk (PW = 300 µs, 2% duty cycle) LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage VCEO 80 Volts Emitter–Collector Voltage VECO 7 Volts Collector–Base Voltage VCBO 80 Volts Collector Current — Continuous IC 100 mA Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C PD 150 mW 1.76 mW/°C VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range(3) TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C 1 6 2 5 3 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) 1. 1. 2. 1. 3. 4N38 does not require UL approval; 4N38A does. Otherwise both parts are identical. Both parts built by Motorola have UL approval. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 2 Optoelectronics Device Data Motorola Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic Symbol Min Typ Max Unit VF — — — 1.15 1.3 1.05 1.5 — — Volts Reverse Leakage Current (VR = 3 V) IR — — 100 µA Capacitance (V = 0 V, f = 1 MHz) CJ — 18 — pF ICEO — — 20 6 50 — nA µA ICBO — 2 20 nA Collector–Emitter Breakdown Voltage (IC = 1 mA) V(BR)CEO 80 120 — Volts Collector–Base Breakdown Voltage (IC = 1 µA) V(BR)CBO 80 120 — Volts Emitter–Collector Breakdown Voltage (IE = 100 µA) V(BR)ECO 7 7.8 — Volts DC Current Gain (IC = 2 mA, VCE = 5 V) hFE — 400 — — Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) CCE — 8 — pF Collector–Base Capacitance (f = 1 MHz, VCB = 0) CCB — 21 — pF Emitter–Base Capacitance ( f = 1 MHz, VEB = 0) CEB — 8 — pF IC (CTR)(2) 4 (20) 7 (35) — mA (%) VCE(sat) — — 1 Volts Turn–On Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) ton — 5 — µs Turn–Off Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) toff — 4 — µs tr — 2 — µs INPUT LED Forward Voltage (IF = 10 mA) TA = 25°C TA = –55°C TA = 100°C OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 60 V, TA = 25°C) (VCE = 60 V, TA = 100°C) Collector–Base Dark Current (VCB = 60 V) COUPLED Output Collector Current (IF = 20 mA, VCE = 1 V) Collector–Emitter Saturation Voltage (IC = 4 mA, IF = 20 mA) Rise Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) Fall Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) tf — 3 — µs Isolation Voltage (f = 60 Hz, t = 1 sec)(4) VISO 7500 — — Vac(pk) Isolation Resistance (V = 500 V)(4) RISO 1011 — — Ω Isolation Capacitance (V = 0 V, f = 1 MHz)(4) CISO — 0.2 — pF 1. 2. 3. 4. Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 11. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 1.6 1.4 TA = –55°C 1.2 25°C 100°C 1 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 Figure 1. LED Forward Voltage versus Forward Current 2 I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 10 NORMALIZED TO: IF = 10 mA 1 0.1 0.01 0.1 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 2. Output Current versus Input Current Motorola Optoelectronics Device Data 12 IF = 10 mA 10 8 6 5 mA 4 2 0 2 mA 1 mA 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) IC, COLLECTOR CURRENT (mA) 14 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 –60 –40 100 NORMALIZED TO: VCE = 10 V TA = 25°C 103 VCC = 10 V VCE = 70 V 50 30 V 20 102 10 V 101 10 RL = 1000 5 RL = 100 100 tf { { tr tf tr 2 10–1 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 1 0.1 100 0.2 Figure 5. Dark Current versus Ambient Temperature 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 100 VCC = 10 V 20 RL = 1000 10 100 5 10 VCC = 10 V 50 t off , TURN–OFF TIME ( µ s) 50 20 RL = 1000 10 5 100 10 2 2 1 0.1 0.5 Figure 6. Rise and Fall Times (Typical Values) 100 t on, TURN–ON TIME ( µs) 100 Figure 4. Output Current versus Ambient Temperature t, TIME (µs) ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) Figure 3. Collector Current versus Collector–Emitter Voltage –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) Figure 7. Turn–On Switching Times (Typical Values) Motorola Optoelectronics Device Data 50 100 1 0.1 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 8. Turn–Off Switching Times (Typical Values) 3 20 IF = 0 IB = 8 µA 18 7 µA 16 3 6 µA 5 µA 4 µA 2 3 µA 2 µA 1 f = 1 MHz 14 12 10 CCB CCE 8 CLED CEB 6 4 1 µA 0 C, CAPACITANCE (pF) I , TYPICAL COLLECTOR CURRENT (mA) C ‘ 4 2 4 6 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 20 2 0 0.5 0.1 Figure 9. DC Current Gain (Detector Only) 0.2 0.5 1 2 5 V, VOLTAGE (VOLTS) 50 WAVEFORMS INPUT PULSE VCC = 10 V INPUT 20 Figure 10. Capacitances versus Voltage TEST CIRCUIT IC 10 RL = 100 Ω 10% OUTPUT OUTPUT PULSE 90% INPUT CURRENT ADJUSTED TO ACHIEVE IC = 2 mA. tr tf toff ton Figure 11. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data PACKAGE DIMENSIONS –A– 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 –B– 1 3 F 4 PL C N –T– L K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M M A M DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 ANODE CATHODE NC EMITTER COLLECTOR BASE CASE 730A–04 ISSUE G –A– 6 4 –B– 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C –T– G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M CASE 730C–04 ISSUE D Motorola Optoelectronics Device Data M DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 *Consult factory for leadform option availability 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. –A– 6 4 –B– 1 3 L N F 4 PL C –T– SEATING PLANE G J K DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 D 6 PL E 6 PL 0.13 (0.005) M T A M B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *4N38/D* Motorola Optoelectronics Device Data 4N38/D