Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. 1N5817 and 1N5819 are Motorola Preferred Devices • Extremely Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case • Shipped in plastic bags, 1000 per bag. • Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the part number • Polarity: Cathode Indicated by Polarity Band • Marking: 1N5817, 1N5818, 1N5819 CASE 59–04 MAXIMUM RATINGS Rating Symbol 1N5817 1N5818 1N5819 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Forward Current (2) (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) IO Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) TA Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, half–wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) 1.0 85 A 80 75 °C IFSM 25 (for one cycle) A TJ, Tstg –65 to +125 °C TJ(pk) 150 °C Symbol Max Unit RθJA 80 °C/W THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2) Characteristic Maximum Instantaneous Forward Voltage (1) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (TL = 25°C) (TL = 100°C) Symbol 1N5817 1N5818 1N5819 Unit vF 0.32 0.45 0.75 0.33 0.55 0.875 0.34 0.6 0.9 V IR 1.0 10 1.0 10 1.0 10 mA (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. (2) Lead Temperature reference is cathode lead 1/32″ from case. Preferred devices are Motorola recommended choices for future use and best overall value. Rev 3 Device Rectifier Motorola, Inc. 1996 Data 1 125 Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) – RθJAPF(AV) – RθJAPR(AV) (1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RθJA = Junction–to–ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) – RθJAPR(AV) (2) TR, REFERENCE TEMPERATURE ( C) NOTE 1 — DETERMINING MAXIMUM RATINGS 40 30 23 ° 115 105 RθJA (°C/W) = 110 95 80 60 85 75 3.0 2.0 4.0 5.0 7.0 10 VR, DC REVERSE VOLTAGE (VOLTS) 15 20 Figure 1. Maximum Reference Temperature 1N5817 Substituting equation (2) into equation (1) yields: The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12–volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA = 80°C/W. 125 TR, REFERENCE TEMPERATURE ( C) TA(max) = TR – RθJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: (4) VR(equiv) = Vin(PK) x F ° 40 105 23 RθJA (°C/W) = 110 80 95 60 85 75 Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109°C Step 1. Find @ VR = 9.2 V and RθJA = 80°C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W 30 115 3.0 4.0 5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS) 30 Figure 2. Maximum Reference Temperature 1N5818 125 TR, REFERENCE TEMPERATURE ( C) I(FM) @ = 10 and IF(AV) = 0.5 A. I(AV) ° Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 – (80) (0.5) = 69°C. **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. 40 30 23 115 105 RθJA (°C/W) = 110 80 95 60 85 75 4.0 5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS) 30 40 Figure 3. Maximum Reference Temperature 1N5819 Table 1. Values for Factor F Half Wave Circuit Load Resistive Sine Wave 0.5 Square Wave 0.75 *Note that VR(PK) ≈ 2.0 Vin(PK). 2 Full Wave, Bridge Capacitive* Resistive Capacitive Full Wave, Center Tapped* † Resistive Capacitive 1.3 0.5 0.65 1.0 1.3 1.5 0.75 0.75 1.5 1.5 † Use line to center tap voltage for Vin. Rectifier Device Data PF(AV) , AVERAGE POWER DISSIPATION (WATTS) R θ JL, THERMAL RESISTANCE, JUNCTION–TO–LEAD (°C/W) 90 BOTH LEADS TO HEATSINK, EQUAL LENGTH 80 70 60 MAXIMUM 50 TYPICAL 40 30 20 10 1 1/8 1/4 3/8 1/2 5/8 3/4 1.0 7/8 5.0 Sine Wave I(FM) = π (Resistive Load) 2.0 I(AV) 5 Capacitive 10 1.0 Loads 20 0.7 0.5 3.0 { SQUARE WAVE 0.3 TJ ≈ 125°C 0.2 0.1 0.07 0.05 0.2 0.4 0.6 0.8 1.0 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMP) L, LEAD LENGTH (INCHES) Figure 4. Steady–State Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) dc 4.0 Figure 5. Forward Power Dissipation 1N5817–19 1.0 0.7 0.5 0.3 ZθJL(t) = ZθJL • r(t) 0.2 0.1 Ppk tp Ppk TIME 0.07 0.05 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. t1 ∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where ∆TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 6. Thermal Response P.C. Board with 1–1/2″ x 1–1/2″ copper surface. P.C. Board with 1–1/2″ x 1–1/2″ copper surface. L = 3/8″ L TYPICAL VALUES FOR RθJA IN STILL AIR Mounting Method Mounting Method 3 Mounting Method 1 NOTE 2 — MOUNTING DATA Data shown for thermal resistance junction–to–ambient (RθJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. L Lead Length, L (in) 3/4 RθJA 72 85 °C/W 87 100 °C/W 1/8 1/4 1/2 1 52 65 2 67 80 3 50 Mounting Method 2 BOARD GROUND PLANE °C/W L L VECTOR PIN MOUNTING Rectifier Device Data 3 NOTE 3 — THERMAL CIRCUIT MODEL (For heat conduction through the leads) RθS(A) RθL(A) RθJ(A) RθJ(K) TA(A) RθL(K) RθS(K) TA(K) PD TL(A) TC(A) TJ TL(K) TC(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RθL = 100°C/W/in typically and 120°C/W/in maximum RθJ = 36°C/W typically and 46°C/W maximum. TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RθS = Thermal Resistance, Heatsink to Ambient RθL = Thermal Resistance, Lead to Heatsink RθJ = Thermal Resistance, Junction to Case PD = Power Dissipation IFSM, PEAK SURGE CURRENT (AMP) 125 20 10 5.0 TC = 100°C 3.0 1 Cycle TL = 70°C f = 60 Hz 105 95 85 Surge Applied at Rated Load Conditions 2.0 25°C 75 1.0 2.0 3.0 20 5.0 7.0 10 NUMBER OF CYCLES 1.0 30 40 70 100 Figure 8. Maximum Non–Repetitive Surge Current 0.7 0.5 30 20 0.3 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMP) 7.0 115 0.2 0.1 0.07 0.05 0.03 0.02 0.1 TJ = 125°C 15 100°C 5.0 3.0 2.0 75°C 1.0 0.5 0.3 0.2 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.05 0.03 1N5817 1N5818 1N5819 0 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Forward Voltage 4 Figure 9. Typical Reverse Current Rectifier Device Data NOTE 4 — HIGH FREQUENCY OPERATION 200 C, CAPACITANCE (pF) Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 100 1N5817 70 1N5818 50 1N5819 30 TJ = 25°C f = 1.0 MHz 20 10 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 10. Typical Capacitance Rectifier Device Data 5 PACKAGE DIMENSIONS B NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO–41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D K A DIM A B D K MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 ––– INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 ––– K CASE 59–04 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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