May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch. BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________________ S G D Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage -50 V VDGR Drain-Gate Voltage (RGS < 20 KΩ) -50 V VGSS Gate-Source Voltage - Continuous ±20 V ID BSS84 o Drain Current - Continuous @ TA = 30/35 C - Pulsed PD -0.13 -0.17 o -0.52 -0.68 TA = 25°C 0.36 0.63 @ TA = 25 C Maximum Power Dissipation BSS110 TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds Units A W -55 to 150 °C 300 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 350 200 °C/W BSS84 Rev. C1 / BSS110. Rev. A2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min -50 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA All IDSS Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V All V TJ = 125°C Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All All µA -60 µA -0.1 µA -10 nA -1.75 -2 V Ω VDS = -25 V, VGS = 0 V IGSSR -15 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA RDS(ON) Static Drain-Source On-Resistance VGS = -5V, ID = -0.10 A BSS84 3.2 10 VGS = -10 V, ID = -0.17 A BSS110 2.2 10 gFS Forward Transconductance -0.8 VDS = -25 V, ID = -0.10A BSS84 0.05 0.27 VDS = -10 V, ID = -0.17 A BSS110 0.05 0.29 VDS = -25 V, VGS = 0 V, f = 1.0 MHz BSS84 37 45 BSS110 37 40 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance pF Coss Output Capacitance All 16 25 pF Crss Reverse Transfer Capacitance All 5 12 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf VDD = -30 V, ID = -0.27 A, VGS = -10 V, RGEN = 50 Ω All 12 nS All 50 nS Turn - Off Delay Time All 10 nS Turn - Off Fall Time All 25 nS A DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Continuous Source Diode Current Maximum Pulsed Source Diode Current (Note 1) Drain-Source Diode Forward Voltage BSS84 -0.13 BSS110 -0.17 BSS84 -0.52 BSS110 -0.68 VGS = 0 V, IS = -0.26 A (Note 1) BSS84 -0.95 -1.2 VGS = 0 V, IS = -0.34 A (Note 1) BSS110 -1 -1.2 A V Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics 3 -1 V GS = -3V -5.0 R DS(on) , NORMALIZED -0.8 -8.0 -6.0 -4.5 -4.0 -0.6 -3.5 -0.4 -3.0 -0.2 -2.5 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) VGS = -10V -3.5 2 .5 -4 .0 2 -4.5 -5.0 1 .5 -6 .0 -8 .0 -1 0 1 0 .5 0 -1 -2 -3 -4 V DS , DRAIN-SOURCE VOLTAGE (V) -5 -0.2 -6 I Figure 1. On-Region Characteristics -0.8 1.4 R DS(on) , NORMALIZED V GS = -10V 1.2 1 0.8 0.6 -50 VGS = -10V 2.5 T = 125°C J 2 1.5 25°C 1 -55°C 0.5 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 150 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 1.1 TJ = -55°C 25°C 125°C Vth , NORMALIZED -0 .8 -0 .6 -0 .4 -0 .2 -2 -4 -6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -8 GATE-SOURCE THRESHOLD VOLTAGE -1 V DS = -10V -1 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance Variation with Temperature 0 -1 3 I D = -0.13A DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -0.4 -0.6 , DRA IN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 I D , DRAIN CURRENT (A) D V DS = V GS I D = -1m A 1.05 1 0.95 0.9 0.85 -5 0 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics (continued) 1 1 .0 5 1 0.2 TJ = 1 2 5 ° C 0.1 25°C 0.05 -55°C 0.01 0.005 S 0 .9 5 0 .9 -50 -25 0 TJ 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 0.001 0.2 150 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) 10 70 50 -VGS , GATE-SOURCE VOLTAGE (V) C iss 30 C oss 20 10 C rss 5 f = 1 MHz V GS = 0V 3 2 0 .1 V DS = -10V I D = -0.13A -20V 8 -40V 6 4 2 0 0 .2 0 .5 1 2 5 10 -V DS , DRA IN TO SOURCE VOLTAGE (V) 20 30 50 0 0 .5 VDD t d(on) 2 t off tr t d(off) tf 90% 90% V OUT D VOUT R GEN 1 .5 t on RL V IN 1 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics VGS 1.6 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 7. Breakdown Voltage Variation with Temperature CAPACITANCE (pF) VGS = 0V 0.5 I D = -250µA -I , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1 .1 10% 10% DUT G 90% S V IN 50% 50% 10% INVERTED PULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics (continued) 2 T J = -55°C 1 0 .4 -I D , DRAIN CURRENT (A) 25°C 0 .3 125°C 0 .2 0 .1 V DS = -10V 10 0.5 RD S(O Li N) 1m t mi 10 10 0.1 0m 1s 10 0.05 V GS = -10V 0u s s ms s s DC SINGLE PULSE T A = 25°C 0.01 g FS , TRANSCONDUCTANCE (SIEMENS) 0 .5 0 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 Figure 13. Transconductance Variation with Drain Current and Temperature 0.005 1 2 5 10 20 30 - V DS , DRAIN -SOURCE VOLTAGE (V) 50 80 Figure 14. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0 .2 0.1 0.05 R θJA (t) = r(t) * R θJA o R = 3 5 0 C/ W θJA 0 .1 0 .05 0 .02 P(pk) 0 .01 t1 0.01 t2 Single Pulse TJ - T A = P * RθJA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve Note : Characterization performed using a circuit board with 175oC/W typical case-to-ambient thermal resistance. BSS84 Rev. C1 / BSS110. Rev. A2 TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 2000, Rev. B SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Antistatic Cover Tape Human Readable Label These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchil d logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. Embossed Carrier Tape 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 3,000 D87Z 7" Dia 13" 187x107x183 343x343x64 Max qty per Box 24,000 30,000 Weight per unit (gm) 0.0082 0.0082 Weight per Reel (kg) 0.1175 0.4006 Reel Size Box Dimension (mm) SOT-23 Unit Orientation TNR 10,000 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Note/Comments Human Readable Label sample H uman readable Label 187mm x 107mm x 183mm Intermediate Box for Standard Option SOT-23 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty poc kets Leader Tape 500mm minimum or 125 empty pockets September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D