Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat ts Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time VBE = 0 PINNING - SOT429 PIN MAX. UNIT 9 3.5 1500 800 16 40 125 5.0 4.5 V V A A W V A µs Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab TYP. collector c b 2 1 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 16 40 10 15 200 10 125 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air 1 Turn-off current. September 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEsat VBEsat hFE hFE Emitter cut-off current Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IC = 9.0 A; IB = 1.64 A IC = 9.0 A; IB = 1.64 A IC = 1 A; VCE = 5 V IC = 9 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 0.825 9 5.5 14 0.91 17 8 1.0 5.0 1.0 27 10 mA V V V TYP. MAX. UNIT 3.5 0.14 4.5 0.25 µs µs DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (32 kHz line deflection dynamic test circuit). ICsat = 9.0 A; LC = 200 µH; Cfb = 13 nF; VCC = 138 V; IB(end) = 1.3 A; -IBM = 4.5 A; -VBB = 4 V; LB = 1 µH Turn-off storage time Turn-off fall time TRANSISTOR ICsat ICsat 90 % IC DIODE t IC IBend IB 10 % tf t 10us t ts 13us IB IBend 32us t VCE - IBM t Fig.1. Switching times waveforms. Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW + 150 v nominal adjust for ICsat VCEsat / V BU2530/2AL 10 Tj = 85 C Tj = 25 C Lc 1 IC/IB = 10 LB IBend IC/IB = 5 T.U.T. 0.1 Cfb -VBB 0.01 0.1 10 100 IC / A Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.3. Switching times test circuit. hFE 1 VBEsat / V BU2530/2AL BU2530/2AL 1 100 VCE = 1 V IC = 9 A Tj = 85 C Tj = 25 C 0.9 0.8 10 IC = 7 A Tj = 85 C Tj = 25 C 0.7 1 0.01 0.1 1 10 0.6 100 IC / A Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V hFE 0 1 2 3 IB / A 4 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC PTOT / W BU2530/2AL 100 BU2530AL 100 VCE = 5 V Tj = 85 C Tj = 25 C Tj = 85 C Tj = 25 C 10 1 0.01 10 0.1 1 10 1 100 Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V September 1997 0 1 2 3 4 IB / A IC / A Fig.8. Typical turn-off losses. PTOT = f (IB); parameter IC; f = 32 kHz 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor ts/tf / us BU2530AW VCC BU2530AL 10 8 LC 6 4 IBend 2 -VBB 0 0 1 2 3 Fig.12. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 1 - 3 µH; CFB = 1 - 10 nF; IB(end) = 1.3 - 2.6 A Fig.9. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz Normalised Power Derating PD% CFB T.U.T. 4 IB / A 120 VCL LB IC / A BU2530/32AL 40 110 100 90 30 80 70 Area where fails occur 60 50 20 40 30 10 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 0 100 1000 1500 Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Zth / K/W VCE / V BU2530AL/32AL 10 1 0.5 0.2 0.1 0.1 0.05 0.02 PD tp D= 0.01 T tp T t D=0 0.001 1.0E-06 1E-04 1E-02 1E+00 t/s Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T September 1997 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.14. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.000