Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat ts Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time VBE = 0 V PINNING - SOT429 PIN MAX. UNIT 5.0 2.2 1700 825 12 30 125 1.0 tbf V V A A W V A µs Tmb ≤ 25 ˚C IC = 5.0 A; IB = 0.91 A ICM = 5.0 A; IB(end) = 0.9 A PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab TYP. collector c b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1700 825 12 30 12 25 200 25 125 150 150 V V A A A A mA A W ˚C ˚C MIN. MAX. UNIT - 10 kV ESD LIMITING VALUES SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ) 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air TYP. MAX. UNIT - 1.0 K/W 45 - K/W MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 825 13.5 - 1.0 - mA V V 0.78 12 5.5 0.86 22 8 1.0 0.95 35 11 V V TYP. MAX. UNIT 2.2 tbf tbf tbf µs µs STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICES ICES Collector cut-off current 2 IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 5.0 A; IB = 0.91 A IC = 5.0 A; IB = 0.91 A IC = 0.1 A; VCE = 5 V IC = 5 A; VCE = 1 V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (64 kHz line deflection circuit) ICM = 5.0 A; LC = 260 µH; Cfb = 4.8 nF; VCC = 180 V; IB(end) = 0.9 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A/µs) Turn-off storage time Turn-off fall time IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU2727AW + 150 v nominal adjust for ICsat DIODE t Lc IB I B end t 5 us 6.5 us LB IBend T.U.T. Cfb 16 us VCE -VBB t Fig.3. Switching times waveforms (64 kHz). Fig.5. Switching times test circuit. ICsat hFE BU2727A/AF 100 90 % VCE = 5 V Tmb = 25 C Tmb = 85 C IC 10 % tf 10 t ts IB IBend t 1 0.01 - IBM 1 10 100 IC / A Fig.4. Switching times definitions. September 1997 0.1 Fig.6. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor hFE BU2727AW BU2727A/AF VCE = 1 V Normalised Power Derating PD% 120 100 110 Tmb = 25 C Tmb = 85 C 100 90 80 70 60 50 10 40 30 20 10 0 1 0.01 0.1 1 10 0 100 20 40 IC / A Fig.7. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) VCEsat / V 60 80 100 Tmb / C 120 140 Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) BU2727A/AF 10 10 Zth / (K/W) BU2525A Tmb = 85 C Tmb = 25 C 1 0.5 1 0.1 IC/IB = 12 IC/IB = 5 0.2 0.1 0.05 0.02 0.1 PD 0.01 0.01 0.1 1 10 IC / A D=0 0.001 1E-06 100 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB VBEsat / V tp D= t T 1E-04 1E-02 t/s tp T 1E+00 Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T BU2727A/AF 1 IC = 6 A 0.9 0.8 4A 0.7 0.6 0 1 Tmb = 85 C Tmb = 25 C 2 3 IB / A 4 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC September 1997 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW VCC IC / A 35 BU2727A/AF/D/DF 30 25 LC Area where fails occur 20 VCL IBend 15 LB T.U.T. -VBB 10 CFB 5 0 100 September 1997 1000 1700 VCE / V Fig.12. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.14. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100