APT50M75JLL 52A 0.075 W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S G S All Ratings: TC = 25°C unless otherwise specified. APT50M75JLL Parameter UNIT L A C I N H C N E T O I E T C MA N A OR V AD INF 500 Drain-Source Voltage Volts 52 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 480 Watts Linear Derating Factor 3.84 W/°C VGSM PD TJ,TSTG 208 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 52 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 500 Volts 52 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.075 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Ohms µA 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) UNIT ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7001 Rev - 1-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT50M75JLL Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 5400 Coss Output Capacitance VDS = 25V 1040 Reverse Transfer Capacitance f = 1 MHz 95 Crss Qg Qgs Total Gate Charge 3 Gate-Drain ("Miller") Charge Turn-on Delay Time tf 30 ID = ID[Cont.] @ 25°C 70 L A C I N H C N E T O I E T C MA N A OR V AD INF td(on) td(off) 145 Gate-Source Charge Qgd tr VGS = 10V VDD = 0.5 VDSS VGS = 15V 11 VDD = 0.5 VDSS 12 ID = ID[Cont.] @ 25°C 30 RG = 0.6W 6 Rise Time Turn-off Delay Time Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP Continuous Source Current (Body Diode) MAX 52 Pulsed Source Current 1 (Body Diode) 208 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts trr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 570 ns Qrr Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs) 11.0 µC THERMAL CHARACTERISTICS Symbol Characteristic RqJC Junction to Case RqJA Junction to Ambient MIN TYP 0.26 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.85mH, R = 25W, Peak I = 52A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 050-7001 Rev - 1-2001 MAX 14.9 (.587) 15.1 (.594) * Source Drain 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 UNIT °C/W