APT11026JFLL
1100V 33A 0.260W
POWER MOS 7TM
FREDFET
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
Symbol
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
S
S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11026JFLL
UNIT
1100
Volts
Drain-Source Voltage
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
33
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
VGSM
PD
TJ,TSTG
134
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
°C
300
33
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
Amps
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
Volts
33
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.260
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7171 Rev - 4-2002
Symbol
APT11026JFLL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
10640
Coss
Output Capacitance
VDS = 25V
1605
Crss
Reverse Transfer Capacitance
f = 1 MHz
302
VGS = 10V
389
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
53
246
VGS = 15V
21
VDD = 0.5 VDSS
13
ID = ID [Cont.] @ 25°C
63
RG = 0.6Ω
20
Qg
Total Gate Charge
3
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
dt
Peak Diode Recovery dv/dt
(Body Diode)
MAX
33
134
UNIT
Amps
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
5
18
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
310
Tj = 125°C
625
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
26
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 6.61mH, R = 25Ω, Peak I = 33A
temperature.
j
G
L
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
050-7171 Rev - 4-2002
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058