IRF IRFP3415

PD - 93962
IRFP3415
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 150V
RDS(on) = 0.042Ω
G
Description
ID = 43A
S
HEXFET®
Fifth Generation
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
43
30
150
200
1.3
± 20
590
22
20
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.75
–––
62
°C/W
1
8/16/00
IRFP3415
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Q gd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min. Typ. Max. Units
Conditions
150
––– –––
V
VGS = 0V, ID = 250µA
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
–––
––– 0.042
Ω
VGS = 10V, ID = 22A „
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
19
––– –––
S
VDS = 50V, ID = 22A
–––
–––
25
VDS = 150V, VGS = 0V
µA
–––
––– 250
VDS = 120V, VGS = 0V, TJ = 150°C
–––
––– 100
VGS = 20V
nA
–––
––– -100
VGS = -20V
–––
––– 200
ID = 22A
–––
–––
17
nC
VDS = 120V
–––
–––
98
VGS = 10V, See Fig. 6 and 13 „
–––
12
–––
VDD = 75V
–––
55
–––
ID = 22A
ns
–––
71
–––
RG = 2.5Ω
–––
69
–––
RD = 3.3Ω, See Fig. 10 „
D
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
S
––– 2400 –––
VGS = 0V
–––
640 –––
pF
VDS = 25V
–––
340 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
43
–––
–––
150
–––
–––
–––
–––
260
2.2
1.3
390
3.3
A
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 22A, VGS = 0V „
TJ = 25°C, IF = 22A
di/dt = 100A/µs „
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 2.4mH
ƒ ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 22A. (See Figure 12)
2
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IRFP3415
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
4.5V
4.5V
20us PULSE WIDTH
T = 25 C
1
20us PULSE WIDTH
T = 175 C
o
J
10
10
J
10
100
1
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
4
100
Fig 2. Typical Output Characteristics
1000
10
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
o
ID = 37A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( oC)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP3415
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
3000
Coss
2000
Crss
1000
0
1
10
ID = 22A
16
VDS = 120V
VDS = 75V
VDS = 30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
40
80
120
160
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
ISD , Reverse Drain Current (A)
100
I D , Drain Current (A)
C, Capacitance (pF)
5000
20
VGS , Gate-to-Source Voltage (V)
6000
10
TJ = 25 o C
100us
10
1ms
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
100
TJ = 175 o C
1.8
1
TC = 25 o C
TJ = 175 o C
Single Pulse
1
10
10ms
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP3415
50
RD
VDS
VGS
40
D.U.T.
RG
+
I D , Drain Current (A)
-VDD
30
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
P DM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP3415
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP
1200
1 5V
BOTTOM
1000
L
VDS
D R IV E R
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test
Circuit
A
800
600
400
200
0
25
V (B R )D SS
ID
9.0A
16A
22A
50
75
100
125
150
175
Starting TJ , Junction Temperature (oC)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP3415
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP3415
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
0.25 (.0 10) M
-A 5 .50 (.217)
20 .30 (.800)
19 .70 (.775)
2X
1
2
5.50 (.21 7)
4.50 (.17 7)
3
-C -
14.8 0 (.5 83)
14.2 0 (.5 59)
2.40 (.09 4)
2.00 (.07 9)
2X
5.45 (.2 15)
2X
-D -
3.65 (.1 43)
3.55 (.1 40)
1 5.90 (.62 6)
1 5.30 (.60 2)
-B-
D B M
5 .30 (.209 )
4 .70 (.185 )
2.5 0 (.08 9)
1.5 0 (.05 9)
4
N O TES :
1 DIM EN S IO N IN G & TO LE R AN C IN G
P ER AN S I Y1 4.5M , 1 98 2.
2 CO N TR O LL IN G DIM EN S IO N : IN CH .
3 CO N F O RM S TO JED E C O U TLINE
TO -2 47 -A C .
4.3 0 (.1 70)
3.7 0 (.1 45)
0.80 (.03 1)
3X 0.40 (.01 6)
1.4 0 (.0 56)
3 X 1.0 0 (.0 39)
0.2 5 (.0 10) M
3 .40 (.133 )
3 .00 (.118 )
C A S
2.60 (.1 02)
2.20 (.0 87)
L EA D A S SIG N M E N TS
1
2
3
4
-
G A TE
D R AIN
S O UR C E
D R AIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 8/00
8
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