ETC IRFP150V

PD - 94459
IRFP150V
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 24mΩ
G
ID = 47A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 packcage because of its isolated
mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
46
32
230
140
0.91
± 20
28
20
5.8
-55 to + 175
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.1
–––
62
°C/W
1
07/02/02
IRFP150V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚
–––
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
58
45
47
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
24
mΩ VGS = 10V, ID =28A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 28A„
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
130
ID = 28A
26
nC
VDS = 80V
43
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 28A
ns
–––
RG = 2.5Ω
–––
VGS = 10V, See Fig. 10 „
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3130 –––
VGS = 0V
410 –––
VDS = 25V
72 –––
pF
ƒ = 1.0MHz, See Fig. 5
1060…280† mJ IAS = 28A, L = 0.70mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
47
––– –––
showing the
A
G
integral reverse
––– ––– 230
S
p-n junction diode.
––– ––– 1.2
V
TJ = 25°C, IS = 28A, VGS = 0V „
––– 140 220
ns
TJ = 25°C, IF = 28A
––– 670 1010 nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.70mH, RG = 25Ω,
IAS = 28A, V GS=10V (See Figure 12).
ƒ ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
2
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
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IRFP150V
1000
1000
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
3.5V
100
BOTTOM
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
3.5V
1
100
BOTTOM
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
3.5V
10
3.5V
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
1000.00
ID, Drain-to-Source Current (Α )
10
VDS, Drain-to-Source Voltage (V)
3.0
I D = 57A
2.5
100.00
10.00
T J = 25°C
1.00
VDS = 15V
20µs PULSE WIDTH
0.10
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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9.0
2.0
(Normalized)
R DS(on) , Drain-to-Source On Resistance
T J = 175°C
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP150V
12
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1000
Coss
Crss
100
V DS = 20V
10
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
Ciss
V DS = 80V
V DS = 50V
Coss = Cds + Cgd
10000
ID = 28A
10
7
5
2
0
1
10
0
100
20
40
60
80
100
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
100
T J = 175°C
10.00
T J = 25°C
1.00
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.10
0.1
0.0
0.5
1.0
1.5
VSD , Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP150V
50
RD
VDS
VGS
40
D.U.T.
RG
+
I D , Drain Current (A)
-VDD
30
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
10
1
Thermal Response
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
J
t1/ t 2
= P DM x Z thJC
+TC
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP150V
550
ID
1 5V
TOP
11A
20A
VD S
D .U .T
RG
IA S
2V0GS
V
440
D R IV E R
+
- VD D
A
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
E AS , Single Pulse Avalanche Energy (mJ)
L
BOTTOM
28A
330
220
110
0
25
50
75
100
125
150
175
( °C)
Starting T , Junction
Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP150V
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFP150V
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
0.25 (.01 0) M
-A5.50 (.21 7)
2 0.30 (.80 0)
1 9.70 (.77 5)
2X
1
2
-D -
3.65 (.143 )
3.55 (.140 )
15.90 (.6 26)
15.30 (.6 02)
-B -
D B M
5.3 0 (.20 9)
4.7 0 (.18 5)
2 .50 (.089)
1 .50 (.059)
4
NOTES:
5.50 (.2 17)
4.50 (.1 77)
1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7 -A C .
3
-C -
1 4.80 (.583 )
1 4.20 (.559 )
2 .40 (.094)
2 .00 (.079)
2X
5.45 (.21 5)
2X
4 .30 (.170 )
3 .70 (.145 )
0 .80 (.031)
3X 0 .40 (.016)
1 .40 (.056 )
3X 1 .00 (.039 )
0 .25 (.010 ) M
3.4 0 (.1 33)
3.0 0 (.1 18)
C A S
2.60 (.10 2)
2.20 (.08 7)
L E A D A S S IG N M E N T S
1
2
3
4
-
GATE
D R A IN
SOURCE
D R A IN
TO-247 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/02
8
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