HITACHI 2SK2727

2SK2727
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-526 A
2nd. Edition
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Avalanche ratings
Outline
TO–3P
D
G
1
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK2727
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
10
A
40
A
10
A
10
A
5.55
mJ
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2727
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
10
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off)
2.5
—
3.5
V
I D = 1mA, VDS = 10V*1
Static drain to source on state RDS(on)
resistance
—
0.75
0.95
Ω
I D = 5A, VGS = 10V*1
Forward transfer admittance
|yfs|
4.2
7.0
—
S
I D = 5A, VDS = 10V*1
Input capacitance
Ciss
—
1100
—
pF
VDS = 10V
Output capacitance
Coss
—
330
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
65
—
pF
f = 1MHz
Total gate charge
Qg
—
21
—
nc
VDD = 400V
Gate to source charge
Qgs
—
5
—
nc
VGS = 10V
Gate to drain charge
Qgd
—
8
—
nc
I D = 10A
Turn-on delay time
t d(on)
—
20
—
ns
VGS = 10V, ID = 5A
Rise time
tr
—
70
—
ns
RL = 6Ω
Turn-off delay time
t d(off)
—
55
—
ns
Fall time
tf
—
50
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I D = 10A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
300
—
ns
I F = 10A, VGS = 0
diF/ dt = 100A/µs
Note:
1. Pulse test
See characteristics curves of 2SK2726
3
2SK2727
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
I D (A)
30
150
100
50
0
DC
3
50
100
150
Case Temperature
er
ion
m
µs
s
10
ms
at
Operation in
this area is
limited by R DS(on)
0.3
(1
sh
(T
c=
ot)
25
°C
)
0.1
200
Ta = 25 °C
1
Tc (°C)
400
20
V DD = 100 V
250 V
400 V
16
300
12
V GS
200
100
0
I D = 10 A
V DD = 400 V
250 V
100 V
8
16
24
32
Gate Charge Qg (nc)
8
4
0
40
Gate to Source Voltage V GS (V)
Repetive Avalanche Energy E AR (mJ)
500
V DS
30
3
10
100 300 1000
Drain to Source Voltage V DS (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Dynamic Input Characteristics
V DS (V)
Op
=
µs
0.03
0
Drain to Source Voltage
1
PW
1
0.01
4
10
10
10
Drain Current
Channel Dissipation
Pch (W)
200
10
I AP = 10 A
V DD = 50 V
duty < 1 %
Rg > 50 Ω
8
6
4
2
0
25
50
75
100
125
Channel Temperature Tch (°C)
150
2SK2727
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
• L • I AP •
2
VDSS
VDSS – V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
V DS
VDD
D. U. T
ID
Vin
15 V
50Ω
0
VDD
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
ho
1s
100 µ
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
5
2SK2727
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2SK2727
Package Dimensions
Unit: mm
5.0 ± 0.3
5.0 max
0.3 typ
1.5 typ
20.1 max
2.0 typ
0.5 typ
16.0 max
14.9 ± 0.2
1.0 typ
φ 3.2 ± 0.2
1.4 max
2.0 typ
1.0 ± 0.2
3.6 typ
5.45 ± 0.2
18.0 ± 0.5
1.6 typ
2.8 typ
0.6 ± 0.2
0.9 typ
1.0 typ
5.45 ± 0.2
Hitachi Code
EIAJ
JEDEC
TO–3P
SC–65
—
7
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.