MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA05LT1 MMBTA06LT1 Collector–Base Voltage 60 80 VCBO MMBTA05LT1 MMBTA06LT1 Emitter–Base Voltage Collector Current – Continuous COLLECTOR 3 Vdc 1 BASE Vdc 60 80 2 EMITTER VEBO 4.0 Vdc IC 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C 2 RJA 556 °C/W PD 300 mW SOT–23 CASE 318 STYLE 6 2.4 mW/°C RJA 417 °C/W TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 1 MARKING DIAGRAMS 1H X 1GM X MMBTA05LT1 MMBTA06LT1 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1H, 1GM = Specific Device Code X = Date Code ORDERING INFORMATION Device Package Shipping MMBTA05LT1 SOT–23 3000/Tape & Reel MMBTA06LT1 SOT–23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 May, 2002 – Rev. 2 1 Publication Order Number: MMBTA05LT1/D MMBTA05LT1, MMBTA06LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 60 80 – – V(BR)EBO 4.0 – Vdc ICES – 0.1 Adc – – 0.1 0.1 100 100 – – OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Vdc MMBTA05 MMBTA06 Emitter–Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Adc ICBO MMBTA05 MMBTA06 ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) – 0.25 Vdc Base–Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) – 1.2 Vdc fT 100 – MHz SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Note 4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME VCC -1.0 V 5.0 s 100 +10 V 0 RL 100 OUTPUT 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 RL OUTPUT * CS 6.0 pF 5.0 F 100 +40 V RB Vin * CS 6.0 pF 5.0 F VCC +VBB +40 V RB Vin tr = 3.0 ns TURN-OFF TIME 300 80 40 C, CAPACITANCE (pF) 200 100 70 50 3.0 5.0 7.0 10 20 30 50 70 100 0.2 0.5 1.0 2.0 5.0 10 20 Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance 50 100 400 TJ = 125°C VCE = 1.0 V ts tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 200 -55°C 100 80 60 40 0.5 500 25°C 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) t, TIME (ns) 4.0 0.1 200 200 10 Cobo VR, REVERSE VOLTAGE (VOLTS) 300 20 10 8.0 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 30 Cibo 20 6.0 30 2.0 100 70 50 TJ = 25°C 60 VCE = 2.0 V TJ = 25°C h FE , DC CURRENT GAIN f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA05LT1, MMBTA06LT1 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 6. “ON” Voltages http://onsemi.com 3 200 500 200 300 500 1.0 -0.8 R VB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBTA05LT1, MMBTA06LT1 TJ = 25°C 0.8 0.6 IC = 250 mA IC = 100 mA IC = 50 mA -1.2 IC = 500 mA -1.6 0.2 0 RVB for VBE -2.0 0.4 IC = 10 mA 0.05 0.1 -2.4 0.2 0.5 1.0 2.0 5.0 10 20 -2.8 0.5 50 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base–Emitter Temperature Coefficient http://onsemi.com 4 500 MMBTA05LT1, MMBTA06LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–23 is a function of the The melting temperature of solder is higher than the rated pad size. This can vary from the minimum pad size for temperature of the device. When the entire device is heated soldering to a pad size given for maximum power to a high temperature, failure to complete soldering within dissipation. Power dissipation for a surface mount device is a short time could result in device failure. Therefore, the determined by TJ(max), the maximum rated junction following items should always be observed in order to temperature of the die, RθJA, the thermal resistance from the minimize the thermal stress to which the devices are device junction to ambient, and the operating temperature, subjected. TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: • Always preheat the device. • The delta temperature between the preheat and soldering TJ(max) – TA PD = should be 100°C or less.* RθJA • When preheating and soldering, the temperature of the The values for the equation are found in the maximum leads and the case must not exceed the maximum ratings table on the data sheet. Substituting these values into temperature ratings as shown on the data sheet. When the equation for an ambient temperature TA of 25°C, one can using infrared heating with the reflow soldering method, calculate the power dissipation of the device which in this the difference shall be a maximum of 10°C. case is 225 milliwatts. • The soldering temperature and time shall not exceed 150°C – 25°C 260°C for more than 10 seconds. PD = = 225 milliwatts 556°C/W • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit • After soldering has been completed, the device should be board to achieve a power dissipation of 225 milliwatts. allowed to cool naturally for at least three minutes. There are other alternatives to achieving higher power Gradual cooling should be used as the use of forced dissipation from the SOT–23 package. Another alternative cooling will increase the temperature gradient and result would be to use a ceramic substrate or an aluminum core in latent failure due to mechanical stress. board such as Thermal Clad. Using a board material such • Mechanical stress or shock should not be applied during as Thermal Clad, an aluminum core board, the power cooling. dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 MMBTA05LT1, MMBTA06LT1 PACKAGE DIMENSIONS SOT–23 (TO–236) CASE 318–08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. A L 3 1 V B S 2 G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBTA05LT1, MMBTA06LT1 Notes http://onsemi.com 7 MMBTA05LT1, MMBTA06LT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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