Reliability Report: Process: Metal: DS1808 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer, Gate Ox Thickness: Al / 0.5% Cu / 0.8% Si Cf: Ea: β: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage VEHICLE DESCRIPTION REV DATE CODE Passivation w/Nov TEOS Oxide-Nitride 225 Å Tuse: Vuse: 60% 0.7 25 °C 5.5 Volts 0 Pin Count: Assembly: Package: Body Size: CONDITION READPOINT 125C, 6.0 V (PSA) & +13.2 V (PS 125C, 6.0 V (PSA) & +13.2 V (PS 6 336 16 ATP (Amkor, PI) SOIC 150x1.4 QUANTITY FAILS FILE # DEVICE HRS HIGH TEMPERATURE OPERATING LIFE HIGH VOLTAGE LIFE DS1808 DS1808 A2 A2 0133 0133 FAILURE RATE DEVICE HRS: MTBF (yrs): PRODUCT REV DIE SIZE (x) DIE SIZE (y) No. of Transistors DS1808 A2 159 80 1700 Thursday, May 16, 2002 2.54E+07 3158 HOURS HOURS 80 80 TOTALS: FITs: 0 0 0 36 452720 24899612