RF2412 5 BROADBAND DUAL-CONVERSION QUADRATURE MODULATOR Typical Applications • Digital and Spread-Spectrum Systems • GMSK, QPSK, DQPSK, QAM • Analog Communication Systems • Portable Battery-Powered Equipment • UHF Digital and Analog Transmitters • Commercial and Consumer Systems Product Description 1 .493 .486 Si Bi-CMOS SiGe HBT ü .050 .413 .398 8 °MAX 0°MIN .050 .016 Optimum Technology Matching® Applied GaAs HBT 5 .018 .014 MODULATORS AND UPCONVERTERS The RF2412 is a monolithic integrated transmitter universal modulation IC capable of generating modulated AM, PM, or compound carriers in the VHF/UHF frequency range. The modulation is performed at VHF, then the resulting spectrum is upconverted to a frequency range between 100MHz to 1000MHz. The IC contains all of the required components to implement the modulation function including differential amplifiers for the baseband inputs, a LO 90° hybrid phase splitter, limiting LO amplifiers, two balanced mixers, a combining differential amplifier, a second upconvert balanced mixer, and an output RF amplifier which will drive a 50Ω load. Since the modulation is performed at a low frequency, excellent amplitude balance and phase accuracy are obtained. Si BJT .009 .005 .299 .292 .092 .010 .008 Package Style: SOP-20 GaAs MESFET Si CMOS Features • Single 3V to 6V Power Supply VDD2 1 VDD1 2 POWER CONTROL PD 3 20 RF OUT • Digitally-Controlled Power Down Mode 19 GND • Dual Conversion 18 GND • DC to 50MHz Modulation Frequency I SIG 4 17 LO2 I REF 5 16 GND Σ Q REF 6 15 MIX IN+ Q SIG 7 14 MIX IN13 GND GND 8 GND 9 LO1 10 -45° +45° 12 MOD OUT11 MOD OUT+ Functional Block Diagram Rev B1 010329 • 50MHz to 150MHz IF Frequency • 100MHz to 1000MHz RF Frequency Ordering Information RF2412 RF2412 PCBA Broadband Dual-Conversion Quadrature Modulator Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 5-7 RF2412 Absolute Maximum Ratings Parameter Supply Voltage PD Voltage Input LO and RF Levels Ambient Operating Temperature Storage Temperature Parameter Rating Unit -0.5 to 7.5 VDD +0.4 +6 -40 to +85 -40 to +150 VDC VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T = 25°C, VDD =5V, VREF =2.5V, BB=100kHz, LO1=70MHz, LO2=700MHz, VMOD =3.0VPP, SSB, unless indicated otherwise. Modulation Signals (I&Q) MODULATORS AND UPCONVERTERS 5 Frequency Range Signal Level Reference Voltage (VREF) Input Impedance to GND Amplitude Balance Quadrature Phase Error Condition DC to 50 2.2 2.0 to 3.0 3 0.1 1 MHz VPP V kΩ dB ° 50 to 150 30 to 225 -5 to +6 750-j400 MHz MHz dBm Ω 100 to 1000 -5 to +6 600-j700 MHz dBm Ω Without external 50Ω termination +4 0 -4 dBm dBm dBm VDD =5V, LO1,2 level=0dBm, SSB Freq=200MHz to 500MHz Freq=500MHz to 800MHz Freq=800MHz to 1000MHz +6 +3 -1 50 1.5:1 3:1 -155 dBm dBm dBm Ω dBm/Hz Sideband Suppression Carrier Suppression 35 25 dBc dBc First LO Harmonics -20 -30 dBc dBc Unadjusted. Modulation DC offset may be externally adjusted for maximum suppression. See Pin Descriptions. Odd unfiltered IF Even unfiltered IF V mA Operating limits VCC =5.0V For 1dB compression First LO Input Frequency Range Power Level Input Impedance For 30dB sideband suppression For 20dB sideband suppression Without external 50Ω termination Second LO Input Frequency Range Power Level Input Impedance RF Output Output Power Output Power Nominal Output Impedance Output VSWR Output Broadband Noise Power VDD =6V, LO1,2 power=0dBm, SSB Freq=200MHz to 500MHz Freq=500MHz to 800MHz Freq=800MHz to 1000MHz Freq<600MHz 600MHz<Freq<1000MHz Spurious Single sideband modulation Power Supply Voltage Current Consumption 5-8 3 to 6.5 31 35 Rev B1 010329 RF2412 Parameter Specification Min. Typ. Max. Unit Condition Power Down Turn On/Off Time PD Input Resistance Power Down “ON” <100 >50 VCC Power Down “OFF” 0 ns kΩ V V Threshold voltage Threshold voltage MODULATORS AND UPCONVERTERS 5 Rev B1 010329 5-9 RF2412 Pin 1 Function VDD2 2 VDD1 3 PD MODULATORS AND UPCONVERTERS 5 4 5 I SIG I REF 6 Q REF 7 Q SIG 8 GND 9 GND 5-10 Description Supply Voltage for the RF Output Stage only. A 33pF external bypass capacitor is required, and an optional 0.1µF will be required if no other low frequency bypass capacitors are nearby. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Though the part is designed to run from a 5V supply, it will also work at 4V. Gain and available output power will be reduced by 5dB to 10dB. Pins 1 and 2 may share a common bypass capacitor. Supply Voltage for all circuits but the RF Output Stage. The same comments as for VDD2 apply to this pin. Pins 1 and 2 may share a common bypass capacitor. Power Down control. When this pin is 0V all circuits are turned off, and when connected to VDD, all circuits are operational. This is a high impedance input, internally connected to the parallel gates of two switching FETs. To minimize current consumption in power down mode, this pin should be as close to 0V as possible. Turn-on voltage of some parts of the circuit may be as low as 0.1V. In order to maximize output power, the voltage on this pin should be as close to VDD as possible during normal operation. A 33pF capacitor is recommended for bypassing. If this pin is not used for power down control, it may be tied to pins 1 and 2, and all three pins may share one 33pF capacitor, provided that the associated trace lengths are minimized. Baseband input to the I mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. A DC reference of approximately VDD/2 must be supplied to this pin. The input impedance of this pin is about 3kΩ. The SIG and REF inputs are inputs of a differential amplifier. Therefore, the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF pins also need to be swapped to maintain the correct phase. The SIG and REF pins may be driven differentially to increase conversion gain. Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned ± 0.15V (relative to the I SIG DC voltage). Without tuning, the carrier suppression will typically be better than 25dB. The input impedance of this pin is about 3kΩ. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned ±0.15V (relative to the Q SIG DC voltage). Without tuning, the carrier suppression will typically be better than 25dB. The input impedance of this pin is about 3 kΩ. Baseband input to the Q mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. A DC reference of approximately VDD/2 must be supplied to this pin. The input impedance of this pin is about 3 kΩ. Therefore, the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. The SIG and REF pins may be driven differentially to increase conversion gain. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 8. Interface Schematic VDD1 VDD2 PD I SIG I REF Same as pin 5. Same as pin 4. Rev B1 010329 RF2412 Function LO1 11 MOD OUT+ 12 13 14 MOD OUTGND MIX IN- 15 16 17 MIX IN+ GND LO2 Description Interface Schematic High impedance modulator LO input. If approximately 0dBm of LO LO1 power is available, a shunt 56Ω resistor may be used for matching. If the available LO power is approximately -6dBm, then a reactive match may be required. There is an internal blocking capacitor between this pin and the LO circuitry, but not between the pin and an internal resistor to ground (see the functional block diagram). An external blocking capacitor should be provided if the pin is connected to a device with DC present. A DC path to ground (an inductor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 1nF is recommended. Balanced IF output port. If no filtering is required this pin can be connected directly to the MIX IN+ pin. This pin is NOT DC blocked and carries DC. A blocking capacitor of 1nF is needed when this pin is connected to a DC path. An appropriate matching network may be needed if an IF filter is used. Same as pin 11, except complementary output. See pin 11. 5 Same as pin 8. High impedance balanced input to the IF stage. This pin has an internal DC blocking capacitor. If no IF filter is needed this pin may be connected directly to MOD OUT-. If an IF filter is used, an external shunt resistor to ground may be needed to provide correct matching for the filter. Same as pin 14, except complementary input. MIX IN+ MIX IN- BIAS GND GND RF OUT BIAS See pin 14. Same as pin 8. Mixer LO Input port. A shunt 56Ω resistor can be used for matching. This pin has internal DC blocking, LO2 BIAS 18 19 20 MOD OUT+ MOD OUT- BIAS Same as pin 8. Same as pin 8. 50Ω output. This pin is not internally DC blocked, and an external blocking capacitor of 33pF is required. RF OUT Rev B1 010329 5-11 MODULATORS AND UPCONVERTERS Pin 10 RF2412 Application Schematic 915 MHz Operation, DC Coupled I and Q Inputs VDD 100 nF 33 pF 1 RF OUT 20 33 pF POWER CONTROL 19 3 18 4 17 5 5 16 MODULATORS AND UPCONVERTERS 2 6 15 7 14 8 13 33 pF I SIG VREF 33 pF 56 Ω Σ 100 nF Q SIG 9 LO1 IN 12 -45° 1 nF +45° 11 10 56 Ω Application Schematic 915 MHz Operation, AC Coupled I and Q Inputs VDD 100 nH 33 pF 1 33 pF 2 100 nF 4 17 100 Ω 5 16 100 Ω 6 15 7 14 8 13 33 pF 33 pF 100 nF 100 nF 19 18 100 Ω VREF POWER CONTROL 3 I SIG RF OUT 20 LO2 IN 56 Ω Σ 100 Ω Q SIG 9 1 nF LO1 IN -45° 12 +45° 10 11 56 Ω 5-12 Rev B1 010329 RF2412 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) C5 100 pF C1 33 pF 2 ISIG J1 QSIG J2 LO1 IN J3 C2 33 pF 50 Ω µstrip C3 1 nF 3 18 4 17 16 5 Σ 6 15 7 14 8 13 9 RF OUT J5 19 50 Ω µstrip -45° +45° C4 100 pF 50 Ω µstrip LO2 IN J4 R2 56 Ω 5 FOR 50 Ω MATCH 12 11 10 P1 R1 56 Ω FOR 50 Ω MATCH Rev B1 010329 POWER CONTROL 50 Ω µstrip P1-3 50 Ω µstrip 20 1 MODULATORS AND UPCONVERTERS P1-1 2412400 Rev - P1-1 P1-3 1 VCC 2 GND 3 REF 5-13 RF2412 Evaluation Board Layout 1.52” x 1.52” MODULATORS AND UPCONVERTERS 5 5-14 Rev B1 010329 RF2412 Pout vs. Baseband Modulation Frequency Pout vs. Baseband Modulation Voltage 5 20 Upper Side Band BB: 54.5dBmV LO1: 70 MHz, 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V +25C -40C -40C +85C +85C 0 0 Pout (dBm) -10 -5 -10 Upper Side Band BB: 100 kHz LO1: 70 MHz, 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V -20 -30 10 20 30 40 50 45 60 50 Modulation Frequency (MHz) 60 65 Pout vs. LO1 Power 20 20 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V 10 Upper Side Band BB: 100 kHz, 54.5 dBmV LO1: 70 MHz, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V +25C -40C 10 +85C 0 Pout (dBm) Pout (dBm) 55 Modulation Voltage (dBmV) Pout vs. LO1 Frequency -10 -20 +25C -40C +85C 0 -10 -20 -30 -30 0 50 100 150 200 250 300 -10 -8 -6 LO1 Frequency (MHz) Pout vs. LO2 Frequency 10 -2 0 2 4 6 Pout vs. LO2 Power 20 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 70 MHz, 0 dBm, 56 Ω Res. Term. LO2: 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V Upper Side Band BB: 100 kHz, 54.5 dBmV LO1: 70 MHz, 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V +25C -40C 10 +85C Pout (dBm) 0 -10 -20 -30 100 -4 LO1 Power (dBm) 20 Pout (dBm) 5 -15 0 MODULATORS AND UPCONVERTERS Pout (dBm) 10 +25C +25C -40C +85C 0 -10 -20 -30 400 700 1000 1300 LO2 Frequency (MHz) Rev B1 010329 1600 1900 -10 -8 -6 -4 -2 0 2 4 6 LO2 Power (dBm) 5-15 RF2412 Phase Error vs. LO1 Frequency Suppression Levels vs. LO1 Frequency (+25C) 10.0 0 -IMD3 -IMD2 S.B. CARR +IMD2 +IMD3 -20 Suppression Level (dBc) Phase Error (Deg.) 5.0 0.0 -5.0 5 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V -60 +25C Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V -80 -40C +85C -10.0 -100 0 MODULATORS AND UPCONVERTERS -40 50 100 150 200 250 300 0 50 LO1 Frequency (MHz) 250 300 0 1.5 +25C -IMD3 -IMD2 S.B. -40C CARR +IMD2 +IMD3 -20 +85C Suppression Level (dBc) 1.0 Amplitude Error (dB) 200 Suppression Levels vs. LO1 Frequency (-40C) 2.0 0.5 0.0 -0.5 -1.0 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V -1.5 -40 -60 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V -80 -2.0 -100 0 50 100 150 200 250 300 0 50 LO1 Frequency (MHz) Pout and Idd vs. Vdd Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 70 MHz, 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vref=2.5V 40 -20 20 -80 0 -100 Idd (mA) -10 Pout, +25C Pout, -40C Pout, +85C Idd, +25C Idd, -40C Idd, +85C -30 5.0 5.5 Vdd (Volts) 250 300 6.0 6.5 -IMD3 -IMD2 S.B. CARR +IMD2 +IMD3 -20 Suppression Level (dBc) 80 60 4.5 200 0 0 4.0 150 Suppression Levels vs. LO1 Frequency (+85C) 100 10 100 LO1 Frequency (MHz) 20 Pout (dBm) 150 LO1 Frequency (MHz) Amplitude Error vs. LO1 Frequency 5-16 100 -40 -60 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V 0 50 100 150 200 250 300 LO1 Frequency (MHz) Rev B1 010329 RF2412 Optimized Carrier Suppression vs. LO1 Frequency (optimized at +25C and LO1=70 MHz) 0 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V Carrier Suppression (dBc) -20 -40 +25C -60 -40C +85C 5 -80 50 100 150 200 250 300 MODULATORS AND UPCONVERTERS 0 LO1 Frequency (MHz) Optimized Sideband Suppression vs. LO1 Frequency (optimized at +25C and LO1=70 MHz) Sideband Suppression (dBc) 0 Upper Side Band BB: 100 kHz, 54.5dBmV LO1: 0 dBm, 56 Ω Res. Term. LO2: 845 MHz, 0 dBm, 56 Ω Res. Term. Vdd: 5.0V, Vref=2.5V -20 -40 +25C -60 -40C +85C -80 0 50 100 150 200 250 300 LO1 Frequency (MHz) Rev B1 010329 5-17