RF2413 • Digital and Spread Spectrum Systems • CDMA Systems • Analog Communication Systems • General Purpose Frequency Conversion • GSM Systems • Portable Battery Powered Equipment The RF2413 is a monolithic integrated transmitter universal modulation IC capable of generating modulated AM, PM, or compound carriers in the VHF/UHF frequency range. The modulation is performed at VHF, then the resulting spectrum is upconverted to a frequency range between 100MHz and 1000MHz. Up to 60dB of power control is possible through the use of two gain control pins. The IC contains all of the required components to implement the modulation function including differential amplifiers for the baseband inputs, a 90° hybrid phase splitter, limiting LO amplifiers, two balanced mixers, a combining, gain-controlled differential amplifier, a second balanced mixer, and an output gain-controlled RF amplifier which will drive a 50Ω load. 1 GaAs HBT Si Bi-CMOS SiGe HBT GaAs MESFET Si CMOS 5 .493 .486 MODULATORS AND UPCONVERTERS .018 .014 .050 .413 .398 8 °MAX 0°MIN .050 .016 Si BJT .009 .005 .299 .292 .092 .010 .008 !" • Single 3V to 6.5V Power Supply VDD2 1 VDD1 2 POWER CONTROL PD 3 20 RF OUT • Low Broadband Noise Floor 19 GND4 • Excellent Amplitude & Phase Balance 18 GND3 I SIG 4 17 LO2 I REF 5 16 GND2 • Digitally Controlled Power Down • 30MHz to 100MHz IF Frequency Σ Q REF 6 15 MIX IN+ Q SIG 7 14 MIX IN- GC1 8 GC2 9 13 GND1 -45° 12 MOD OUT- +45° LO1 10 • 200MHz to 1000MHz RF Frequency RF2413 11 MOD OUT+ RF2413 PCBA Rev B3 990419 Gain Controlled Dual-Conversion Quadrature Modulator Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 5-19 RF2413 Absolute Maximum Ratings Parameter Supply Voltage Input LO and RF Levels I and Q Modulation Levels Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to 7.0 +6 VDD -40 to +85 -40 to +150 VDC dBm V °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T = 25°C, VDD =5V, VREF =2.5V, BB=100kHz, LO1=70MHz, LO2=700MHz, VMOD =3.0VPP, SSB, unless indicated otherwise. Modulation Signals (I&Q) MODULATORS AND UPCONVERTERS 5 Condition Frequency Range Signal Level Reference Voltage (VREF) Input Impedance Amplitude Balance Quadrature Phase Error DC to 25 3.0 2.0 to 3.0 3 0.1 1 MHz VPP V kΩ dB ° 30 to 200 30 to 250 -5 to +6 750-j500 MHz MHz dBm Ω 290-j160 170-j180 6000-j2500 5200-j2800 Ω Ω Ω Ω 100 to 1000 0 to +6 2000-j3000 MHz dBm Ω 600-j1400 Ω +6 +2 -1 75 1.5 dBm dBm dBm dB V For 1dB compression First LO Input Frequency Range Power Level Input Impedance For 30dB sideband suppression For 20dB sideband suppression At 100MHz, without external 50Ω termination IF Inputs & Outputs (MOD OUT & MIX IN) Output Impedance Input Impedance At 100MHz At 200MHz At 100MHz At 200MHz Second LO Input Frequency Range Power Level Input Impedance At 300MHz, without external 50Ω termination At 1000MHz, without external 50Ω termination RF Output Output Power -2 Total Gain Control Range Gain Control Voltage for minimum gain Gain Control Voltage for maximum gain Nominal Output Impedance Output VSWR Output Broadband Noise Power 5-20 +5 5.0 V 50 1.5:1 3:1 -155 Ω VDD =6V, LO1,2 power=0dBm, SSB Freq=200MHz to 500MHz Freq=500MHz to 800MHz Freq=800MHz to 1000MHz Gain 1 and Gain 2 Freq<600MHz 600MHz<Freq<1000MHz dBm/Hz Rev B3 990419 RF2413 Spurious Sideband Suppression Carrier Suppression First LO Harmonics 30 20 35 25 dBc dBc 20 30 dBc dBc Single sideband modulation Unadjusted. Unadjusted. Modulation DC offset may be externally adjusted for maximum suppression. Suppression is then typically 40dBc. Odd unfiltered IF Even unfiltered IF <100 >50 VCC 0 ns kΩ V V Threshold voltage Threshold voltage 5 3 to 6.5 35 V V mA Power Down Turn On/Off Time PD Input Resistance Power Down “ON” Power Down “OFF” Power Supply Voltage 50 5 MODULATORS AND UPCONVERTERS Current Consumption Specifications Operating limits Rev B3 990419 5-21 RF2413 Pin 1 Function VDD2 2 VDD1 3 PD MODULATORS AND UPCONVERTERS 5 4 5 I SIG I REF 6 Q REF 7 Q SIG 8 GC1 9 5-22 GC2 Description Interface Schematic Supply Voltage for the RF Output Stage only. A 33pF external bypass capacitor is required and an optional 0.1µF will be required if no other low frequency bypass capacitors are nearby. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Though the part is designed to run from a 5V supply, it will work at 3V. Gain and available output power will be reduced by 5 to 10dB. This also means that the part is sensitive to unintended power supply variation. Power supply voltage should be kept constant, or another way of maintaining constant output power is required. Supply Voltage for all circuits except the RF Output Stage. The same comments as for VDD2 apply to this pin. Power Down control. When this pin is 0V all circuits are turned off, and when this pin is VDD all circuits are operating. This is a high impedance input, internally connected to the gates of a few FETs. To minimize current consumption in power down mode, this pin should be as close to 0V as possible. Turn-on voltage of some parts of the circuit may be as low as 0.1V. In order to maximize output power this pin should be as close to VDD as possible during normal operation. Baseband input to the I mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3kΩ. Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned ±0.15V (relative to the I SIG DC voltage). Without tuning it will typically be better than 25dB. Input impedance of this pin is about 3kΩ. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned ±0.15V (relative to the Q SIG DC voltage). Without tuning, the carrier suppression will typically be better than 25dB. The input impedance of this pin is about 3 kΩ. Baseband input to the Q mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3kΩ. Gain control of the IF input amplifier. This pin, when used as the only gain control, will give a 30dB control range. When used together with GC2, a 60dB range is available. When this pin is at 1.8V or lower, the gain is set to the minimum; when this pin is at 3.8V or above, the gain is set to the maximum; see the plot below for typical characteristics. If fixed maximum output level is required, it is recommended to connect this pin to VDD. There are no provisions in the chip for limiting the bandwidth of the gain control, so very fast response times are available. If a slower response is desired, an external capacitor can be added. Gain control for the RF output amplifier. This pin has the same control characteristics as GC1. VDD1 VDD2 PD I SIG I REF Same as pin 5. Same as pin 4. GCx Same as pin 8. Rev B3 990419 RF2413 LO1 11 MOD OUT+ 12 13 MOD OUTGND1 14 MIX IN- 15 16 MIX IN+ GND2 17 LO2 High impedance modulator LO input. A shunt 56Ω resistor can be used for matching. This pin is NOT internally DC blocked. An external blocking capacitor must be provided if the pin is connected to a device with DC present. A DC path to ground (i.e. an inductor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 1nF is recommended. LO1 Balanced IF output port. If no filtering is required this pin can be connected directly to the MIX IN+ pin. This pin is NOT DC blocked and carries DC. A blocking capacitor of 1nF is needed when this pin is connected to a DC path. An appropriate matching network may be needed if an IF filter is used. Same as pin 11, except complementary output. See pin 11. Ground connection for all baseband circuits, modulator and the IF buffer amplifier. Keep traces physically short and connect immediately to ground plane for best performance. High impedance balanced input to the gain controlled IF stage. This pin MIX IN+ has an internal DC blocking capacitor. If no IF filter is needed, this pin may be connected directly to MOD OUT-. If an IF filter is used, an external shunt resistor to ground may be needed to provide correct matching BIAS for the filter. Same as pin 14, except complementary input. See pin 14. GND3 19 GND4 20 RF OUT MOD OUT- MIX IN- BIAS Ground connection for the limiting LO2 buffer amplifier. Keep traces physically short and connect immediately to ground plane for best performance. Mixer LO Input port. A shunt 56Ω resistor can be used for matching. This pin has internal DC blocking, LO2 BIAS 18 MOD OUT+ BIAS Ground connection for the IF mixer and the RF gain control stage. Keep traces physically short and connect immediately to ground plane for best performance. Ground connection for the RF output stage. Keep traces physically short and connect immediately to ground plane for best performance. 50Ω output. This pin is not internally DC blocked, and an external blocking capacitor of 100pF is required. RF OUT Rev B3 990419 5-23 5 MODULATORS AND UPCONVERTERS 10 RF2413 VDD 33 pF 1 100 nF 33 pF 2 CMOS POWER DOWN POWER CONTROL VREF 3 18 4 17 50 Ω µstrip MODULATORS AND UPCONVERTERS 5 470 Ω 5 470 Ω 470 Ω 16 15 Q INPUT 7 14 GAIN CONTROL 1 8 13 GAIN CONTROL 2 LO 1 INPUT 470 Ω Note 3 50 Ω µstrip LO 2 INPUT Note 1 56 Ω Σ 6 100 nF RF OUTPUT 19 100 nF Q INPUT 1 µF 50 Ω µstrip 20 9 1 nF Note 2 12 -45° +45° 10 11 56 Ω 5-24 NOTE 1: Optional; High input impedance without resistor. SMD resistor mounted adjacent to package pin, grounded through via to the ground plane. NOTE 2: If no IF filter is needed, tie pins 11, 12, 14, and 15 as shown. Otherwise insert the filter and the matching network. NOTE 3: Gain control pins (8 and 9) may be tied together directly. Rev B3 990419 RF2413 (Download Bill of Materials from www.rfmd.com.) C5 100 pF C1 33 pF C6 100 nF 2 ISIG J1 QSIG J2 C2 33 pF P2-3 50 Ω µstrip C3 1 nF 18 4 17 C4 100 pF 50 Ω µstrip 16 5 6 15 7 14 8 13 5 FOR 50 Ω MATCH 12 -45° +45° 11 P1 FOR 50 Ω MATCH LO2 IN J4 R2 56 Ω Σ 10 R1 56 Ω Rev B3 990419 3 9 RF OUT J5 19 50 Ω µstrip P2-1 LO1 IN J3 POWER CONTROL 50 Ω µstrip P1-3 50 Ω µstrip 20 1 MODULATORS AND UPCONVERTERS P1-1 2413400 Rev A P1-1 P1-3 P2 1 VCC 2 GND 3 REF P2-1 P2-3 1 GAIN 1 2 GND 3 GAIN 2 5-25 RF2413 Board Size 0.039”; Board Material FR-4; Multi-Layer MODULATORS AND UPCONVERTERS 5 5-26 Rev B3 990419 RF2413 Pout vs. Gain Control Voltages 10 0 -10 -30 BB: 100 kHz, 1.5 Vpp LO1: 124 MHz, 0 dBm LO2: 569 MHz, 0 dBm Vdd: 5.0V, Vref=2.5V -40 -50 5 MODULATORS AND UPCONVERTERS Pout (dBm) -20 Vg1=Vg2=V gain Vg1=Vdd, Vg2=V gain -60 Vg2=Vdd, Vg1=V gain -70 1.5 2 2.5 3 3.5 4 4.5 5 Vgain (Volts) Rev B3 990419 5-27 MODULATORS AND UPCONVERTERS RF2413 5 5-28 Rev B3 990419