RF2480 5 DIRECT QUADRATURE MODULATOR Typical Applications • Dual-Band CDMA Base Stations • W-CDMA Base Stations • TDMA/TDMA-EDGE Base Stations • WLAN and WLL Systems • GSM-EDGE/EGSM Base Stations • TETRA Systems Product Description -A- 0.050 ü Si Bi-CMOS GaAs MESFET SiGe HBT Si CMOS 0.068 0.053 0.244 0.229 8° MAX 0° MIN Optimum Technology Matching® Applied GaAs HBT 5 0.018 0.014 0.393 0.386 0.034 0.016 Si BJT 0.008 0.004 MODULATORS AND UPCONVERTERS The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for highfrequency AM, PM, or compound carriers. This low-cost IC features excellent linearity, noise floor, and over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90° carrier phase shift network, carrier limiting amplifiers, two matched double-balanced mixers, summing amplifier, and an output RF amplifier which will drive 50Ω from 800MHz to 2500MHz. Component matching is used to obtain excellent amplitude balance and phase accuracy. 0.157 0.150 0.009 0.007 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A". Package Style: SOIC-16 Features • Typical Carrier Suppression>35dBc over I REF 1 16 I S IG Q REF 2 15 Q S IG • Single 5V Power Supply GND2 3 14 GND1 • Integrated RF quadrature network GND2 4 13 GND1 • Digitally controlled Power Down mode GND2 5 12 GND1 • 800MHz to 2500MHz operation LO 6 11 VCC2 10 GND1 9 RF OUT Σ -4 5 ° temperature with highly linear operation +45° VCC1 PD 7 8 POW ER CONTROL Functional Block Diagram Rev A3 011019 Ordering Information RF2480 RF2480 PCBA Direct Quadrature Modulator Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 5-29 RF2480 Absolute Maximum Ratings Parameter Supply Voltage Input LO and RF Levels Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +7.5 +10 -40 to +85 -40 to +150 VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =5V Carrier Input MODULATORS AND UPCONVERTERS 5 Frequency Range Power Level Input VSWR Condition 800 -6 2500 +6 MHz dBm 4.5:1 2:1 2:1 At 900MHz unmatched At 1800MHz unmatched At 2500MHz unmatched Modulation Input Frequency Range Reference Voltage (VREF) Maximum Modulation (I&Q) Gain Asymmetry Quadrature Phase Error Input Resistance Input Bias Current DC 250 40 MHz V V dB ° kΩ µA +2 dBm 3.0 VREF ±1.0 0.2 3 30 RF Output (~800MHz) Maximum Output Power -3 0 High-Linearity Output Power -6 -5 dBm Adjacent Channel Power Rejection Output P1dB IM3 Suppression -47 -52 dBc +2 -39 +3 -40 dBm dBc IM5 Suppression -49 -59 dBc IM7 Suppression -49 -71 dBc Carrier Suppression Sideband Suppression Broadband Noise Floor -25 -25 -30 -30 -150 dBc dBc dBm/Hz 5-30 -145 LO=800MHz, -5dBm; SSB TETRA I&Q Amplitude=2VPP Over operating temperature. TETRA I&Q Amplitude=1.1VPP with an ACPR of -47dBc. Over operating temperature. TETRA modulation applied with POUT =-5dBm. Over operating temperature. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. Unadjusted performance. Unadjusted performance. 26MHz offset with TETRA signal applied POUT =-5dBm. Rev A3 011019 RF2480 Specification Min. Typ. Max. Unit RF Output (~900MHz) Maximum Output Power High-Linearity Output Power Carrier Suppression Sideband Suppression 0 +4 -11 50 dBm dBm dB 35 dB 50 dB 35 dB 13-j:25 -153.0 Ω dBm/Hz -3 -17 50 dBm dBm dB 35 dB 50 dB 40 dB Output Impedance Broadband Noise Floor RF Output (~2000MHz) Maximum Output Power High-Linearity Output Power Carrier Suppression Sideband Suppression -7 Output Impedance Broadband Noise Floor Ω dBm/Hz 58-j11 -158.0 Condition LO=880MHz, -5dBm; SSB I&Q Amplitude=2VPP I&Q Amplitude=0.325VPP T=25°C; POUT =-11dBm (meets CDMA base station requirements); optimized I,Q DC offsets Over Temperature (Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-11dBm) T=25°C; POUT =-11dBm; optimized I,Q DC offsets Over Temperature (Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-11dBm) At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. LO=2000MHz, -5dBm; SSB I&Q Amplitude=2VPP I&Q Amplitude=0.325VPP T=25°C; POUT =-17dBm; optimized I,Q DC offsets Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-17dBm T=25°C; POUT =-17dBm; optimized I,Q DC offsets Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-17dBm At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. Power Down Turn On/Off Time PD Input Resistance Power Control “ON” Power Control “OFF” 100 50 2.8 1.0 1.2 ns kΩ V V Threshold voltage Threshold voltage V V mA µA Specifications Operating Limits Operating Power Down Power Supply Voltage 5 4.5 Current 6.0 50 25 Rev A3 011019 5-31 5 MODULATORS AND UPCONVERTERS Parameter RF2480 Pin 1 2 Function I REF Q REF MODULATORS AND UPCONVERTERS 5 Description Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal offsets. See RFMD AN0001 for more detail. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended. See pin 1 for more details. Interface Schematic I SIG I REF 100 Ω 100 Ω 425 Ω 425 Ω Q SIG Q REF 100 Ω 100 Ω 425 Ω 3 GND2 4 5 6 GND2 GND2 LO 7 VCC1 8 PD 9 RF OUT 425 Ω Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane. Same as pin 3. Same as pin 3. The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage driven so matching at different frequencies is not required. Power supply for all circuits except the RF output stage. An external capacitor is needed if no other low frequency bypass capacitor is nearby. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typically 1.2V or less at room temperature.When this pin is "high" (VCC), all circuits are operating normally. If PD is below VCC, output power and performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power control is required. RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power. LO VCC 200 Ω PD RF OUT 10 GND3 11 VCC2 12 GND1 13 14 GND1 GND1 5-32 Ground connection for the RF output stage. This pin should be connected directly to the ground plane. Power supply for the RF output amplifier. An external capacitor is needed if no other low frequency bypass capacitor is near by. Ground connection for the LO and baseband amplifiers, and for the mixers. This pin should be connected directly to the ground plane. Same as pin 12. Same as pin 12. Rev A3 011019 RF2480 16 Function Q SIG I SIG Description Interface Schematic Baseband input to the Q mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. Q SIG Q REF 100 Ω 425 Ω Baseband input to the I mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. 100 Ω 425 Ω I SIG I REF 100 Ω 425 Ω 100 Ω 425 Ω 5 MODULATORS AND UPCONVERTERS Pin 15 Application Schematic DC-Coupled I R EF 1 00 n F Q REF 1 00 n F 1 16 I S IG 2 15 Q S IG 3 14 4 LO IN Σ 12 5 VCC 6 13 -4 5° 11 +45° 1 00 n F 10 7 8 POW ER CONTROL VCC 9 10 0 nF RF OUT PD 1 00 n F Rev A3 011019 5-33 RF2480 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P2 P1 P1-1 1 VCC 1 REF 2 GND 2 GND 3 NC 3 NC P2-1 50 Ω µstrip P2-1 C1 100 nF MODULATORS AND UPCONVERTERS 5 1 16 2 15 3 14 4 Σ 5 LO IN J1 50 Ω µstrip I SIG J4 Q SIG J3 13 12 50 Ω µstrip 6 -45° 11 +45° P1-1 7 C2 100 nF 8 C3 100 nF P1-1 10 POWER CONTROL 50 Ω µstrip 9 RF OUT J2 2480400- 5-34 Rev A3 011019 RF2480 Evaluation Board Layout Board Size 1.510” x 1.510” Board Thickness 0.031”, FR-4 MODULATORS AND UPCONVERTERS 5 Rev A3 011019 5-35 MODULATORS AND UPCONVERTERS RF2480 5 5-36 Rev A3 011019