STMICROELECTRONICS TS3V912BI

TS3V912
3V RAIL TO RAIL
CMOS DUAL OPERATIONAL AMPLIFIER
.
.
.
.
..
.
..
.
DEDICATED TO 3.3V OR BATTERY SUPPLY
(specified at 3V and 5V)
RAIL TO RAIL INPUT AND OUTPUT
VOLTAGE RANGES
SINGLE SUPPLY OPERATION FROM 2.7V
TO 16V
EXTREMELY LOW INPUT BIAS CURRENT :
1pA typ
LOW INPUT OFFSET VOLTAGE : 2mV max.
SPECIFIED FOR 600Ω AND 100Ω LOADS
LOW SUPPLY CURRENT : 200µA/Ampli
(VCC = 3V)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
ESD TOLERANCE : 3KV
LATCH-UP IMMUNITY
MACROMODEL INCLUDED IN THIS
SPECIFICATION
ORDER CODES
Part Number
Temperature Range
TS3V912I/AI/BI
-40, +125oC
Package
N
D
•
•
PIN CONNECTIONS (top view)
DESCRIPTION
The TS3V912 is a RAIL TO RAIL CMOS dual
operational amplifier designed to operate with a
single 3V supply voltage.
The input voltage range Vicm includes the two
supply rails VCC+ and VCC-.
The output reaches :
• VCC- +40mV
VCC+ -50mV
with RL = 10kΩ
• VCC- +350mV VCC+ -350mV with RL = 600Ω
This product offers a broad supply voltage operating range from 2.7V to 16V and a supply current of
only 200µA/amp. (VCC = 3V).
Source and sink output current capability is typically 40mA (at VCC = 3V), fixed by an internal
limitation circuit.
SGS-THOMSON is offering a quad op-amp with
the same features : TS3V914.
October 1997
8 VCC
Output 1
1
Inverting Input 1
2
-
Non-inverting Input 1
3
+
VCC
4
+
7 Output 2
-
6 Inverting Input 2
+
5 Non-inverting Input 2
1/11
TS3V912
SCHEMATIC DIAGRAM (1/2 TS3V912)
VCC
Inte rnal
Vre f
Non-inverting
Input
Inverting
Input
O utput
VCC
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
VCC
Supply Voltage - (note 1)
Parameter
18
V
Vid
Differential Input Voltage - (note 2)
±18
V
Vi
Input Voltage - (note 3)
-0.3 to 18
V
Iin
Current on Inputs
±50
mA
Io
Current on Outputs
±130
mA
o
Operating Free Air Temperature Range
Toper
C
TS3V912I/AI/BI
Tstg
Notes :
-40 to +125
Storage Temperature
-65 to +150
o
C
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltages must never exceed VCC+ +0.3V.
OPERATING CONDITIONS
Symbol
VCC
Vicm
2/11
Parameter
Supply Voltage
Common Mode Input Voltage Range
-
Value
Unit
2.7 to 16
V
VCC -0.2 to
VCC++0.2
V
TS3V912
ELECTRICAL CHARACTERISTICS
VCC+ = 3V, VCC- = 0V, RL,CL connected to VCC/2, Tamb = 25oC (unless otherwise specified)
Symbol
Vio
Parameter
Input Offset Voltage (V ic = Vo = VCC/2)
Tmin. ≤ Tamb ≤ Tmax.
DVio
Iio
Iib
ICC
CMR
SVR
Avd
VOH
Input Offset Voltage Drift
Input Offset Current - (note 1)
Tmin. ≤ Tamb ≤ Tmax.
Input Bias Current - (note 1)
Tmin. ≤ Tamb ≤ Tmax.
Supply Current (per amplifier, AVCL = 1, no load)
Tmin. ≤ Tamb ≤ Tmax.
Common Mode Rejection Ratio
Vic = 0 to 3V, Vo = 1.5V
+
Supply Voltage Rejection Ratio (VCC = 2.7 to 3.3V, VO = VCC /2)
Large Signal Voltage Gain (RL = 10kΩ, VO = 1.2V to 1.8V)
Tmin. ≤ Tamb ≤ Tmax.
High Level Output Voltage (V id = 1V)
RL = 100kΩ
RL = 10kΩ
RL = 600Ω
RL = 100Ω
Tmin. ≤ Tamb ≤ Tmax.
VOL
Low Level Output Voltage (Vid = -1V)
Tmin. ≤ Tamb ≤ Tmax.
Output Short Circuit Current (Vid = ±1V)
Io
GBP
+
SR
SR∅m
en
VO1/VO2
TS3V912
TS3V912A
TS3V912B
TS3V912
TS3V912A
TS3V912B
RL = 10kΩ
RL = 600Ω
RL = 100kΩ
RL = 10kΩ
RL = 600Ω
RL = 100Ω
RL = 10kΩ
RL = 600Ω
−
Source (Vo = VCC )
+
Sink
(Vo = VCC )
TS3V912I/AI/BI
Min.
Typ.
Max.
10
5
2
12
7
3
5
1
100
200
1
150
300
200
300
400
70
50
80
3
10
2
2.95
2.9
2.96
2.3
2.6
2
Unit
mV
µV/oC
pA
pA
µA
dB
dB
V/mV
V
2.8
2.1
30
300
900
50
70
400
mV
100
600
20
20
40
40
mA
MHz
Gain Bandwidth Product
(AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz)
Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, Vi = 1.3V to 1.7V)
Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, Vi = 1.3V to 1.7V)
Phase Margin
0.8
0.4
0.3
30
Equivalent Input Noise Voltage (Rs = 100Ω, f = 1kHz)
30
Channel Separation (f = 1kHz)
120
V/µs
V/µs
Degrees
nV

√
Hz
dB
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
3/11
TS3V912
ELECTRICAL CHARACTERISTICS
VCC+ = 5V, VCC- = 0V, RL,CL connected to VCC/2, Tamb = 25oC (unless otherwise specified)
Symbol
Vio
Parameter
Input Offset Voltage (Vic = Vo = VCC/2)
Tmin. ≤ Tamb ≤ Tmax.
DVio
Iio
Iib
ICC
CMR
SVR
Avd
VOH
Input Offset Voltage Drift
Input Offset Current - (note 1)
Tmin. ≤ Tamb ≤ Tmax.
Input Bias Current - (note 1)
Tmin. ≤ Tamb ≤ Tmax.
Supply Current (per amplifier, A VCL = 1, no load)
Tmin. ≤ Tamb ≤ Tmax.
Common Mode Rejection Ratio
Vic = 1.5 to 3.5V, Vo = 2.5V
+
Supply Voltage Rejection Ratio (VCC = 3 to 5V, VO = VCC /2)
Large Signal Voltage Gain (RL = 10kΩ, VO = 1.5V to 3.5V)
Tmin. ≤ Tamb ≤ Tmax.
High Level Output Voltage (Vid = 1V)
R L = 100kΩ
R L = 10kΩ
R L = 600Ω
R L = 100Ω
Tmin. ≤ Tamb ≤ Tmax.
VOL
Low Level Output Voltage (Vid = -1V)
Tmin. ≤ Tamb ≤ Tmax.
Io
GBP
SR +
SR
en
VO1/VO2
∅m
TS3V912
TS3V912A
TS3V912B
TS3V912
TS3V912A
TS3V912B
Output Short Circuit Current (Vid = ±1V)
R L = 10kΩ
R L = 600Ω
R L = 100kΩ
R L = 10kΩ
R L = 600Ω
R L = 100Ω
R L = 10kΩ
R L = 600Ω
−
Source (Vo = VCC )
+
Sink
(Vo = VCC )
Unit
mV
µV/oC
pA
pA
µA
dB
60
55
10
7
4.95
4.9
4.25
85
80
40
dB
V/mV
V
4.95
4.55
3.7
4.8
4.1
40
350
1400
50
100
500
mV
150
750
45
45
65
65
mA
MHz
Gain Bandwidth Product
(AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz)
Slew Rate (AVCL = 1, R L = 10kΩ, CL = 100pF, Vi = 1V to 4V)
Slew Rate (AVCL = 1, R L = 10kΩ, CL = 100pF, Vi = 1V to 4V)
1
0.8
0.6
Equivalent Input Noise Voltage (Rs = 100Ω, f = 1kHz)
30
Channel Separation (f = 1kHz)
Phase Margin
120
30
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
4/11
TS3V912I/AI/BI
Min.
Typ.
Max.
10
5
2
12
7
3
5
1
100
200
1
150
300
230
350
450
V/µs
V/µs
nV

√
Hz
dB
Degrees
TS3V912
TYPICAL CHARACTERISTICS
Figure 2 : Input Bias Current versus Temperature
10 0
600
INPUT BIAS CURRENT, I ib (pA)
SUPPLY CURRENT, I CC ( µ A)
Figure 1 : Supply Current (each amplifier)
versus Supply Voltage
Tamb = 25 C
A VC L = 1
V O = VCC / 2
500
400
300
200
VCC = 10V
V i = 5V
No load
10
1
100
0
4
8
12
16
25
50
Figure 3a : High Level Output Voltage versus
High Level Output Current
125
Figure 3b : High Level Output Voltage versus
High Level Output Current
5
OUTPUT VOLTAGE, VOH (V)
20
T amb = 25 C
V id = 100mV
4
VCC = +5V
3
2
VCC = +3 V
1
T a mb = 25 C
Vid = 100mV
16
VCC = +16V
12
VCC = +10V
8
4
0
0
-70
-56
-42
-28
-14
0
-70
OUTPUT CURRENT, IOH (mA)
T amb = 25 C
V id = -100mV
VCC = +3V
2
VCC = +5V
1
0
-28
-14
0
10
OUTPUT VOLTAGE, VOL (V)
3
-42
Figure 4b : Low Level Output Voltage versus
Low Level Output Current
5
4
-56
OUTP UT CURRENT, IOH (mA)
Figure 4a : Low Level Output Voltage versus
Low Level Output Current
OUTPUT VOLTAGE, V OL (V)
10 0
TEMPERATURE, T amb ( C)
SUPP LY VOLTAGE, V CC (V)
OUTPUT VOLTAGE, VOH (V)
75
14
28
42
56
70
OUTP UT CURRENT, I OL (mA)
8
T amb = 25 C
V id = -100mV
6
VCC = 16V
4
VCC = 10V
2
0
14
28
42
56
70
OUTPUT CURRENT, I OL (mA)
5/11
TS3V912
Figure 5a : Open Loop Frequency Response
and Phase Shift
Figure 5b : Open Loop Frequency Response
and Phase Shift
50
GAIN
PHASE
45
P ha s e
Ma rgin
20
90
Ta mb = 25 C
VCC = 10V
R L = 10k Ω
C L = 100pF
AVCL = 100
10
0
135
Ga in
Ba ndwidth
P roduct
180
GAIN (dB)
30
2
4
5
6
10
10
10
FREQUENCY, f (Hz)
10
10
P has e
Margin
Tamb = 25 C
VCC = 1 0V
R L = 600 Ω
C L = 100pF
A VCL = 100
20
0
10
7
45
P HASE
2
10
3
90
135
Ga in
Ba ndwidth
P roduct
4
5
10
10
10
FREQUENCY, f (Hz)
180
6
10
7
Figure 6a : Gain Bandwidth Product versus
Supply Voltage
Figure 6b : Gain bandwidth Product versus
Supply Voltage
GAIN BANDW. PROD., GBP (kHz)
3
30
GAIN BANDW. PROD., GBP (kHz)
10
0
10
-10
10
GAIN
40
0
PHASE (Degrees)
GAIN (dB)
40
1800
Ta mb = 25 C
R L = 10kΩ
C L = 100pF
1400
1000
600
200
0
4
8
12
16
180 0
Ta mb = 25 C
R L = 600Ω
C L = 100pF
14 00
1 000
6 00
20 0
0
60
Tamb = 25 C
R L = 10kΩ
C L = 10 0pF
40
30
20
4
8
12
S UP PLY VOLTAGE, VCC (V)
6/11
8
12
16
Figure 7b : Phase Margin versus Supply Voltage
PHASE MARGIN, φm (Degrees)
PHASE MARGIN, φ m (Degrees)
Figure 7a : Phase Margin versus Supply Voltage
0
4
S UP P LY VOLTAGE, VCC (V)
SUP P LY VOLTAGE, VCC (V)
50
PHASE (Degrees)
50
16
60
Tamb = 25 C
R L = 6 00Ω
C L = 1 00pF
50
40
30
20
0
4
8
12
S UP P LY VOLTAGE, VCC (V)
16
TS3V912
EQUIVALENT INPUT
VOLTAGE NOISE (nV/VHz)
Figure 8 : Input Voltage Noise versus Frequency
150
VCC = 10V
Tamb = 25 C
R S = 100 Ω
100
50
0
1000
100
FREQUENCY (Hz)
10
10000
ORDERING INFORMATION
T
3
S
V
9
1
2
A
N
I
3V
FAMILY
RAIL TO RAIL
OP AMPs
TEMPERATURE
RANGE
OFFS ET VOLTAG E
S ELECTION
”Nothing”
A
B
12
DUAL - 200µA/amp - 0.8MHz
02
DUAL - 200µA/amp - 0.7MHz
+ S TANDBY position with
High Impedance Outputs
10mV max.
5mV max.
2mV max.
I
-40 C to +125 C
PACKAGES
N
D
DT
DIP
S0
S 0 Ta pe &Re el
7/11
TS3V912
Applies to : TS3V912 (VCC = 3V)
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIV E POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS3V912_3 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 1.271505E+01
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.125860E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.000000E+00
FCN 5 4 VOFN 5.000000E+00
* AMPLIFYING STAGE
FIP 5 19 VOFP 2.750000E+02
FIN 5 19 VOFN 2.750000E+02
RG1 19 5 1.916825E+05
RG2 19 4 1.916825E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.3E+03
HZTN 5 30 VOFN 1.3E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 150
HONM 21 27 VOUT 3800
VINM 5 27 150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 75
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E8
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = le seuil au dessus de vio * 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous de vio * 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
ELECTRICAL CHARACTERISTICS VCC+ = 3V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25oC
(unless otherwise specified)
Symbol
Conditions
Vio
Unit
0
mV
Avd
R L = 10kΩ
10
V/mV
ICC
No load, per operator
200
µA
-0.2 to 3.2
V
VOH
R L = 10kΩ
2.96
V
VOL
R L = 10kΩ
30
mV
mA
Vicm
8/11
Value
Isink
VO = 3V
40
Isource
VO = 0V
40
mA
GBP
R L = 10kΩ, C L = 100pF
0.8
MHz
SR
R L = 10kΩ, C L = 100pF
0.3
V/µs
TS3V912
Applies to : TS3V912 (VCC = 5V)
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIV E POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
* 6 STANDBY
.SUBCKT TS3V912_5 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.322092E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.498970E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.750000E+00
FCN 5 4 VOFN 5.750000E+00
ISTB0 5 4 500N
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.400000E+02
FIN 5 19 VOFN 4.400000E+02
RG1 19 5 4.904961E+05
RG2 19 4 4.904961E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.8E+03
HZTN 5 30 VOFN 1.8E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 230
HONM 21 27 VOUT 3800
VINM 5 27 230
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 82
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E+08
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = le seuil au dessus de vio * 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous de vio * 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
ELECTRICAL CHARACTERISTICS VCC+ = 5V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25oC
(unless otherwise specified)
Symbol
Vio
Avd
ICC
Vicm
VOH
VOL
Isink
Isource
GBP
SR
Conditions
RL = 10kΩ
No load, per operator
RL = 10kΩ
RL = 10kΩ
VO = 5V
VO = 0V
RL = 10kΩ, C L = 100pF
RL = 10kΩ, C L = 100pF
Value
0
50
230
-0.2 to 5.2
4.95
40
65
65
1
0.8
Unit
mV
V/mV
µA
V
V
mV
mA
mA
MHz
V/µs
9/11
TS3V912
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
10/11
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
DIP8.TBL
Dimensions
TS3V912
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
S08.TBL
Dimensions
o
8 (max.)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
ORDER CODE :
 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOM SON Microelectronics GROUP OF COMPANIES
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11/11