VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications GND GND GND Vctrl 5 GND GND 6 4 3 2 1 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 • Xmit & Rcv AGC circuitry for mobile infrastructure 18 19 Function Gain Control No Connect RF Input Interstage Match RF Output / DC bias Ground 20 21 GND 17 MATCH 16 N/C 22 GND 15 GND Superior thermal design allows the product to have a minimum MTTF rating of 100 years at a mounting temperature of +85º C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surfacemount assembly. 7 GND 8 GND The VG101 is a cellular-band high dynamic range variable gain amplifier (VGA) packaged in a 6x6 mm surfacemount package. The +21 dBm output compression point and +40 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG101 ideal for use in transmitter and receiver AGC circuits and as a variable gain stage following an LNA in high dynamic range receiver front ends. N/C 750 – 1000 MHz bandwidth 30 dB Attenuation Range +40 dBm Output IP3 +21 dBm P1dB Constant IP3 & P1dB over attenuation range • Single voltage supply • 6x6 mm 28-pin QFN package • MTTF > 100 years Functional Diagram GND • • • • • Product Description GND Product Features Product Information Pin No 5 7, 19 11 21 25 All other pins Backside copper Specifications Parameter Units Min Typ Max Frequency Range Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure at min. attenuation Gain Variation Range Gain Variation Control Voltage, VCTRL Group Delay Supply Voltage Operating Amplifier Current Range Gain Control Pin Current Range Thermal Resistance Junction Temperature MHz dB dB dB dBm dBm dB dB V ns V mA mA °C / W °C 750 15 900 16 10 10 +21 +40 3.8 30 1000 +37 0 120 0 Conditions See note 1 See note 2 VCTRL = 0 V See note 3 4.5 1 +5 150 Frequency = 800 MHz 180 25 59 160 Pin 25 Pin 5 draws no current at maximum gain See note 4 Test conditions unless otherwise noted. 1. T = 25ºC, Vdd = +5 V, Frequency = 900 MHz in an application circuit. 2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured with 15 mA of current on gain control pin 5. 4. The junction temperature ensures a minimum MTBF rating of 1 million hours of usage. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Amplifier Supply Voltage (pin 25) Attenuation Control Voltage RF Input Power (continuous) Junction Temperature Rating -40 to +85 °C -55 to +125 °C +6 V +5.5 V +12 dBm +220° C Ordering Information Part No. Description VG101 VG101-PCB Cellular-band Variable Gain Amplifier Fully Assembled Application Board Operation of this device above any of these parameters may cause permanent damage. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Product Information Application Circuit: 750 – 1000 MHz (VG101-PCB) Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness • Pin 21 needs to be connected to ground through a high impedance transmission line as shown for proper interstage matching. The position of R2 can be varied for optimal performance. • The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. • Distances are shown from the edge-to-edge for the land pattern. Bill of Materials Description 47 pF Chip Capacitor 0.01 µF Chip Capacitor 82 nH Chip Inductor 39 nH Chip Inductor 100 Ω Chip Resistor MMBT2222 Motorola Transistor VG101 Variable Gain Amplifier Ref. Des. C1, C3 C2, C4 L1 L2 R1 Q1 U1 S-Parameters Attenuation Control Voltage = 0 V, 25°C 5 0.0 20 10 -10 -15 -20 -20 1000 -30 S22 8 700 800 900 Frequency (MHz) -10 S22 S11 0 -1.0 f = 864 - 889 MHz -1.5 -2.0 1 2 3 4 0 5 Output Intercept Point vs. Output Power frequency = 900 MHz, 25°C 10 15 20 25 OIP3 / P1dB vs. Normalized Gain frequency = 900 MHz, Pout = +10 dBm, 25°C 40 40 0 5 Normalized Attenuation (dB) Gain Control Voltage (V) Phase Shift vs. Normalized Gain frequency = 900 MHz, 25°C OIP -5 -10 -15 -20 Magnitude (dBm) 35 OIP3 (dBm) Normalized Phase (deg) f = 824 - 849 MHz -0.5 Flatness (dB) S11 12 Normalizedtothemaximum gainlevel of 17dB 0 -10 -5 0 14 10 10 S21 (dB) 0 Return Loss (dB) S21 16 -20 Normalized Normalized Gain (dB) 18 Gain Flatness 25°C -30 S11, S22, S21 vs Gain Control Voltage frequency = 900 MHz, 25°C Size 0603 0603 0603 0603 0603 SOT-23 QFN 6x6 30 25 35 30 25 P1dB 20 -25 Normalized to the maximum gain level of 17 dB -30 15 20 0 -5 -10 -15 -20 Normalized Gain (dB) -25 -30 -5 0 5 10 15 0 -5 -10 -15 -20 Normalized Gain (dB) Output Power (dBm) This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Product Information Product Marking Outline Drawing The component will be lasermarked with a “VG101” designator with a four-digit alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ESD / MSL Information ESD Classification: Value: Test: Standard: Class 1B Passes 600 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Classification: Value: Test: Standard: Class IV Passes 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 1 at +250 °C convection reflow JEDEC Standard J-STD-020B Functional Pin Layout Mounting Configuration / Land Pattern Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION GND GND GND GND Gain control pin GND N/C GND GND GND RF Input GND GND GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND GND GND GND N/C GND Interstage Match GND GND GND RF Output / Bias GND GND GND This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003