ETC DG418AK/883

DG417/418/419
Vishay Siliconix
Precision CMOS Analog Switches
Wide Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make
Switching Action
Simple Interfacing
Reduced Board Space
Improved Reliability
15-V Analog Signal Range
On-Resistance—rDS(on): 20 Fast Switching Action—tON: 100 ns
Ultra Low Power Requirements—PD:35 nW
TTL and CMOS Compatible
MiniDIP and SOIC Packaging
44-V Supply Max Rating
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control
Systems
Hard Disk Drives
The DG417/418/419 monolithic CMOS analog switches were
designed to provide high performance switching of analog
signals. Combining low power, low leakages, high speed, low
on-resistance and small physical size, the DG417 series is
ideally suited for portable and battery powered industrial and
military applications requiring high performance and efficient
use of board space.
high voltage silicon gate (HVSG) process. Break-before-make
is guaranteed for the DG419, which is an SPDT configuration.
An epitaxial layer prevents latchup.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
DG417
Dual-In-Line and SOIC
S
1
8
D
NC
2
7
V–
GND
3
6
IN
V+
4
5
VL
Logic
DG417
DG418
0
ON
OFF
1
OFF
ON
Logic “0” = 0.8 V, Logic “1” = 2.4 V
Top View
DG419
Dual-In-Line and SOIC
D
1
8
S2
S1
2
7
V–
GND
3
6
IN
V+
5
4
VL
Logic
SW1
SW2
0
ON
OFF
1
OFF
ON
Logic “0” = 0.8 V, Logic “1” = 2.4 V
Top View
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
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DG417/418/419
Vishay Siliconix
Temp Range
Package
Part Number
DG417/418
8-Pin Plastic MiniDIP
–40
40 to 85
85_C
C
8-Pin Narrow SOIC
–55 to 125_C
8-Pin CerDIP
DG417DJ
DG418DJ
DG417DY
DG418DY
DG417AK, DG417AK/883, 5962-90701MPA
DG418AK, DG418AK/883, 5962-90702MPA
DG419
–40 to 85_C
–55 to 125_C
8-Pin Plastic MiniDIP
DG419DJ
8-Pin Narrow SOIC
DG419DY
8-Pin CerDIP
DG419AK, DG419AK/883, 5962-90703MPA
NOTE: SMD product is dual marked with /883 number.
Power Dissipation (Package)b
8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 6.5 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C
V+
S
VL
V–
VIN
Level
Shift/
Drive
V+
GND
D
V–
FIGURE 1.
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Document Number: 70051
S-52433—Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = –10 mA, VD = 12.5 V
V+ = 13.5 V, V– = –13.5 V
Room
Full
20
Room
Full
–0.1
–0.25
–20
0.25
20
–0.25
–5
0.25
5
DG417
DG418
Room
Full
–0.1
–0.25
–20
0.25
20
–0.25
–5
0.25
5
DG419
Room
Full
–0.1
–0.75
–60
0.75
60
–0.75
–12
0.75
12
DG417
DG418
Room
Full
–0.4
–0.4
–40
0.4
40
–0.4
–10
0.4
10
DG419
Room
Full
–0.4
–0.75
–60
0.75
60
–0.75
–12
0.75
12
Typc
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
Full
IS(off)
Switch
S
i h Off
Leakage Current
Channel On
L k
Leakage
Current
C
t
ID(off)
ID(on)
16 5 V,
V V–
V = –16.5
16 5 V
V+ = 16.5
VD = 15.5 V
VS = 15.5 V
V+ = 16.5 V,, V– = –16.5 V
VS = VD = 15.5
15 5 V
–15
15
–15
35
45
15
V
35
45
W
nA
A
Digital Control
Input Current
VIN Low
IIL
Full
0.005
–0.5
0.5
–0.5
0.5
Input Current
VIN High
IIH
Full
0.005
–0.5
0.5
–0.5
0.5
DG417
DG418
Room
Full
100
175
250
175
250
DG417
DG418
Room
Full
60
145
210
145
210
175
250
175
250
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
RL = 300 W , CL = 35 pF
VS = 10 V
S S
See
Switching
it hi Time
Ti
Test Circuit
tTRANS
RL = 300 W , CL = 35 pF
VS1 = 10 V
VS2 = 10 V
DG419
Room
Full
Break-Before-Make
Time Delay
tD
RL = 300 W , CL = 35 pF
VS1 = VS2 = 10 V
DG419
Room
13
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Room
60
Room
8
Transition Time
Source Off
Capacitance
CS(off)
Drain Off Capacitance
CD(off)
DG417
DG418
Room
8
CD(on)
DG417
DG418
Room
30
DG419
Room
35
Room
Full
0.001
Room
Full
–0.001
Room
Full
0.001
Channel On
Capacitance
f = 1 MHz, VS = 0 V
f = 1 MHz,, VS = 0 V
5
ns
5
pC
pF
p
F
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I–
Logic Supply Current
IL
Ground Current
V = 16
5V
V = –16.5
16 5 V
V+
16.5
V, V–
VIN = 0 or 5 V
IGND
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
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Room
Full
–0.000
1
1
5
–1
–5
1
5
–1
–5
1
5
–1
–5
1
5
A
mA
–1
–5
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DG417/418/419
Vishay Siliconix
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V = 12 V
V+
V, V
V– = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Full
IS = –10 mA, VD = 3.8 V
V+ = 10.8 V
0
Room
40
Room
110
Room
40
Room
60
Room
5
Room
0.001
Room
–0.001
12
0
12
V
W
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
RL = 300 W , CL = 35 p
pF,, VS = 8 V
S S
it hi Ti
Ci it
See
Switching
Time T
Testt Circuit
Break-Before-Make
Time Delay
tD
RL = 300 W , CL = 35 pF
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
DG419
ns
pC
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I–
Logic Supply Current
IL
Room
0.001
IGND
Room
–0.001
Ground Current
V = 13
V+
13.2
2V
V, VL = 5
5.25
25 V
VIN = 0 or 5 V
mA
A
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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Document Number: 70051
S-52433—Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
_ rDS(on) vs. VD and Supply Voltage
50
rDS(on) vs. Temperature
40
5 V
ID = –10 mA
40
TA = 125_C
30
r DS(on)( )
r DS(on)( )
8 V
30
10 V
12 V
15 V
20
20 V
25_C
20
–55_C
10
10
0
0
–20
–15
–10
–5
0
10
5
15
20
–15
–10
–5
0
5
10
VD – Drain Voltage (V)
VD – Drain Voltage (V)
Leakage Currents vs. Analog Voltage
Drain Charge Injection
30
200
V+ = 15 V
V– = –15 V
VL = 5 V
20
CL = 10 nF
V+ = 16.5 V
V– = –16.5 V
VL = 5 V
VIN = 0 V
150
1 nF
DG417/418: ID(off), IS(off)
DG419: IS(off)
10
500 pF
Q (pC)
100
I (pA)
15
0
100 pF
50
DG417/418: ID(on)
DG419: ID(off), ID(on)
–10
0
–20
–30
–50
–15
–10
–5
0
5
10
15
–15
–10
VD or VS – Drain or Source Voltage (V)
–5
0
5
10
15
VS – Source Voltage (V)
Input Switching Threshold vs. Supply Voltages
3.5
3.0
V TH (V)
2.5
VL = 7 V
2.0
1.5
VL = 5 V
1.0
0.5
0
(V+)
5
10
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15
20
25
30
35
40
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DG417/418/419
Vishay Siliconix
_ Switching Time vs. Temperature
Crosstalk and Off Isolation vs. Frequency
140
120
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 3 V Pulse
100
tON
120
DG417/418/419
Source 2
DG419
Source 1
80
tOFF
(dB)
t ON , t OFF (ns)
100
80
60
60
40
40
20
V+ = 15 V
V– = –15 V
VL = 5 V
20
0
0
–55 –40 –20
0
20
40
60
80
100
100
120
1k
10 k
Temperature (_C)
100 k
1M
10 M
100 M
f – Frequency (Hz)
Switching Time vs. Supply Voltages
Switching Time vs. V+
130
80
120
110
100
tON
V– = 0 V
VL = 5 V
VIN = 3 V
t ON , t OFF (ns)
t ON , t OFF (ns)
70
60
tON
90
V– = 0 V
VL = 5 V
VIN = 3 V
80
70
60
50
50
tOFF
tOFF
40
40
10
30
11
12
13
14
15
16
10
11
Supply Voltage (V)
12
13
14
15
16
V+ Supply Voltage (V)
Power Supply Currents vs. Switching Frequency
Supply Current vs. Temperature
10 mA
1 mA
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 5 V, 50% D Cycle
100 nA
V+ = 16.5 V, V– = –16.5 V
VL = 5 V, VIN = 0 V
1 mA
I SUPPLY
I SUPPLY
10 nA
100 mA
I+, I–
10 mA
I+, I–
1 nA
100 pA
IL
IGND
10 pA
1 mA
1 pA
100 nA
100
1k
10 k
100 k
1M
f – Frequency (Hz)
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10 M
0.1 pA
–55 –40
–20
0
20
40
60
80
100
120
Temperature (_C)
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
VO is the steady state output with the switch on.
+5 V
+15 V
3V
Logic
Input
VL
V+
0V
D
S
10 V
tr <20 ns
tf <20 ns
50%
VO
tOFF
IN
RL
300 V–
GND
CL
35 pF
–15 V
CL (includes fixture and stray capacitance)
Switch
Input
VS
Switch
Output
0V
Note:
RL
VO = VS
VO
90%
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
RL + rDS(on)
FIGURE 2. Switching Time (DG417/418)
+5 V
+15 V
Logic
Input
VL
VS1
VS2
V+
S1
3V
tr <20 ns
tf <20 ns
0V
D
VO
S2
RL
300 IN
GND
VS1 = VS2
VO
CL
35 pF
Switch
Output
V–
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
–15 V
FIGURE 3. Break-Before-Make (DG419)
+5 V
VL
VS1
VS2
+15 V
V+
S1
D
VO
Logic
Input
3V
0V
S2
RL
300 IN
GND
tr <20 ns
tf <20 ns
50%
tTRANS
CL
35 pF
tTRANS
VS1
V01
V–
90%
Switch
Output
VS2
–15 V
V02
10%
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
FIGURE 4. Transition Time (DG419)
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DG417/418/419
Vishay Siliconix
Rg
+5 V
+15 V
VL
V+
S
DVO
VO
D
VO
IN
g
INX
OFF
CL
10 nF
3V
ON
V–
GND
OFF
Q = DVO x CL
–15 V
FIGURE 5. Charge Injection
+5 V
+15 V
C
C
+5 V
VL
S1
VS
C
D
C
Rg = 50 W
VL
50 W
VO
VO
D
Rg = 50 W
0V, 2.4 V
IN
0.8 V
GND
V+
S
VS
S2
RL
+15 V
V+
GND
C
V–
RL
IN
C = RF bypass
C
–15 V
–15 V
XTALK Isolation = 20 log
V–
VS
Off Isolation = 20 log
VS
VO
VO
FIGURE 6. Crosstalk (DG419)
FIGURE 7. Off Isolation
+5 V
+15 V
C
C
VL
V+
S
VS
D
VO
Rg = 50 W
0V, 2.4 V
RL
IN
GND
V–
C
–15 V
FIGURE 8. Insertion Loss
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Document Number: 70051
S-52433—Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
+5 V
+15 V
+15 V
C
C
VL
V+
S
V+ S2
DG417/418
IN
GND
V–
0 V, 2.4 V
HP4192A
Impedance
Analyzer
or Equivalent
D
Meter
HP4192A
Impedance
Analyzer
or Equivalent
IN
D2
D1
GND
f = 1 MHz
C
S1
DG419
Meter
0 V, 2.4 V
NC
C
V–
C
–15 V
f = 1 MHz
–15 V
FIGURE 9. Source/Drain Capacitances
Switched Signal Powers Analog Switch
A positive input pulse turns on the clamping diode D1 and
charges C1. The charge stored on C1 is used to power the
chip; operation is satisfactory because the switch requires less
than 1 mA of stand-by supply current. Loading of the signal
source is imperceptible. The DG419’s on-resistance is a low
100 W for a 5-V input signal.
The analog switch in Figure 10 derives power from its input
signal, provided the input signal amplitude exceeds 4 V and its
frequency exceeds 1 kHz.
This circuit is useful when signals have to be routed to either
of two remote loads. Only three conductors are required: one
for the signal to be switched, one for the control signal and a
common return.
D1
C1
0.01 mF
VL
V+
S1
D
VOUT
Input
S2
RL2
10 kW
IN
Control
DG419
GND
V–
RL1
10 kW
FIGURE 10.Switched Signal Powers Remote
SPDT Analog Switch
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DG417/418/419
Vishay Siliconix
Micropower UPS Transfer Switch
Programmable Gain Amplifier
When VCC drops to 3.3 V, the DG417 changes states, closing
SW1 and connecting the backup cell, as shown in Figure 11.
D1 prevents current from leaking back towards the rest of the
circuit. Current consumption by the CMOS analog switch is
around 100 pA; this ensures that most of the power available
is applied to the memory, where it is really needed. In the
stand-by mode, hundreds of mA are sufficient to retain memory
data.
The DG419, as shown in Figure 12, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by rDS(on) variation as a function of
analog signal amplitude.
When the 5-V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
GaAs FET Driver
The DG419, as shown in Figure 13 may be used as a GaAs
FET driver. It translates a TTL control signal into –8-V, 0-V level
outputs to drive the gate.
V+
D1
SW1
VL
D
VCC
(5 V)
R1
VSENSE
453 kW
S
+
DG417
Memory
3 V Li Cell
–
IN
GND
R2
383 kW
V–
FIGURE 11.Micropower UPS Circuit
+5 V
DG419
S1
S2
R1
VL
R2
GaAs FET
V+
S1
IN
S2
D
VOUT
D
VIN
DG419
5V
–
VOUT
GND
V–
+
–8 V
FIGURE 12.Programmable Gain Amplifier
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FIGURE 13.GaAs FET Driver
Document Number: 70051
S-52433—Rev. E, 06-Sep-99