DG417/418/419 Vishay Siliconix Precision CMOS Analog Switches Wide Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability 15-V Analog Signal Range On-Resistance—rDS(on): 20 Fast Switching Action—tON: 100 ns Ultra Low Power Requirements—PD:35 nW TTL and CMOS Compatible MiniDIP and SOIC Packaging 44-V Supply Max Rating Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drives The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Vishay Siliconix’s The DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. DG417 Dual-In-Line and SOIC S 1 8 D NC 2 7 V– GND 3 6 IN V+ 4 5 VL Logic DG417 DG418 0 ON OFF 1 OFF ON Logic “0” = 0.8 V, Logic “1” = 2.4 V Top View DG419 Dual-In-Line and SOIC D 1 8 S2 S1 2 7 V– GND 3 6 IN V+ 5 4 VL Logic SW1 SW2 0 ON OFF 1 OFF ON Logic “0” = 0.8 V, Logic “1” = 2.4 V Top View Document Number: 70051 S-52433—Rev. E, 06-Sep-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.siliconix.com FaxBack 408-970-5600 1 DG417/418/419 Vishay Siliconix Temp Range Package Part Number DG417/418 8-Pin Plastic MiniDIP –40 40 to 85 85_C C 8-Pin Narrow SOIC –55 to 125_C 8-Pin CerDIP DG417DJ DG418DJ DG417DY DG418DY DG417AK, DG417AK/883, 5962-90701MPA DG418AK, DG418AK/883, 5962-90702MPA DG419 –40 to 85_C –55 to 125_C 8-Pin Plastic MiniDIP DG419DJ 8-Pin Narrow SOIC DG419DY 8-Pin CerDIP DG419AK, DG419AK/883, 5962-90703MPA NOTE: SMD product is dual marked with /883 number. Power Dissipation (Package)b 8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V or 30 mA, whichever occurs first Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 6.5 mW/_C above 75_C e. Derate 12 mW/_C above 75_C Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C V+ S VL V– VIN Level Shift/ Drive V+ GND D V– FIGURE 1. www.siliconix.com S FaxBack 408-970-5600 2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Document Number: 70051 S-52433—Rev. E, 06-Sep-99 DG417/418/419 Vishay Siliconix Test Conditions Unless Otherwise Specified Parameter Symbol A Suffix D Suffix –55 to 125_C –40 to 85_C V+ = 15 V, V– = –15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb IS = –10 mA, VD = 12.5 V V+ = 13.5 V, V– = –13.5 V Room Full 20 Room Full –0.1 –0.25 –20 0.25 20 –0.25 –5 0.25 5 DG417 DG418 Room Full –0.1 –0.25 –20 0.25 20 –0.25 –5 0.25 5 DG419 Room Full –0.1 –0.75 –60 0.75 60 –0.75 –12 0.75 12 DG417 DG418 Room Full –0.4 –0.4 –40 0.4 40 –0.4 –10 0.4 10 DG419 Room Full –0.4 –0.75 –60 0.75 60 –0.75 –12 0.75 12 Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) Full IS(off) Switch S i h Off Leakage Current Channel On L k Leakage Current C t ID(off) ID(on) 16 5 V, V V– V = –16.5 16 5 V V+ = 16.5 VD = 15.5 V VS = 15.5 V V+ = 16.5 V,, V– = –16.5 V VS = VD = 15.5 15 5 V –15 15 –15 35 45 15 V 35 45 W nA A Digital Control Input Current VIN Low IIL Full 0.005 –0.5 0.5 –0.5 0.5 Input Current VIN High IIH Full 0.005 –0.5 0.5 –0.5 0.5 DG417 DG418 Room Full 100 175 250 175 250 DG417 DG418 Room Full 60 145 210 145 210 175 250 175 250 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 W , CL = 35 pF VS = 10 V S S See Switching it hi Time Ti Test Circuit tTRANS RL = 300 W , CL = 35 pF VS1 = 10 V VS2 = 10 V DG419 Room Full Break-Before-Make Time Delay tD RL = 300 W , CL = 35 pF VS1 = VS2 = 10 V DG419 Room 13 Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 W Room 60 Room 8 Transition Time Source Off Capacitance CS(off) Drain Off Capacitance CD(off) DG417 DG418 Room 8 CD(on) DG417 DG418 Room 30 DG419 Room 35 Room Full 0.001 Room Full –0.001 Room Full 0.001 Channel On Capacitance f = 1 MHz, VS = 0 V f = 1 MHz,, VS = 0 V 5 ns 5 pC pF p F Power Supplies Positive Supply Current I+ Negative Supply Current I– Logic Supply Current IL Ground Current V = 16 5V V = –16.5 16 5 V V+ 16.5 V, V– VIN = 0 or 5 V IGND Document Number: 70051 S-52433—Rev. E, 06-Sep-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Room Full –0.000 1 1 5 –1 –5 1 5 –1 –5 1 5 –1 –5 1 5 A mA –1 –5 www.siliconix.com S FaxBack 408-970-5600 3 DG417/418/419 Vishay Siliconix Test Conditions Unless Otherwise Specified Parameter Symbol V = 12 V V+ V, V V– = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS = –10 mA, VD = 3.8 V V+ = 10.8 V 0 Room 40 Room 110 Room 40 Room 60 Room 5 Room 0.001 Room –0.001 12 0 12 V W Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 W , CL = 35 p pF,, VS = 8 V S S it hi Ti Ci it See Switching Time T Testt Circuit Break-Before-Make Time Delay tD RL = 300 W , CL = 35 pF Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 W DG419 ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I– Logic Supply Current IL Room 0.001 IGND Room –0.001 Ground Current V = 13 V+ 13.2 2V V, VL = 5 5.25 25 V VIN = 0 or 5 V mA A Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.siliconix.com S FaxBack 408-970-5600 4 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Document Number: 70051 S-52433—Rev. E, 06-Sep-99 DG417/418/419 Vishay Siliconix _ rDS(on) vs. VD and Supply Voltage 50 rDS(on) vs. Temperature 40 5 V ID = –10 mA 40 TA = 125_C 30 r DS(on)( ) r DS(on)( ) 8 V 30 10 V 12 V 15 V 20 20 V 25_C 20 –55_C 10 10 0 0 –20 –15 –10 –5 0 10 5 15 20 –15 –10 –5 0 5 10 VD – Drain Voltage (V) VD – Drain Voltage (V) Leakage Currents vs. Analog Voltage Drain Charge Injection 30 200 V+ = 15 V V– = –15 V VL = 5 V 20 CL = 10 nF V+ = 16.5 V V– = –16.5 V VL = 5 V VIN = 0 V 150 1 nF DG417/418: ID(off), IS(off) DG419: IS(off) 10 500 pF Q (pC) 100 I (pA) 15 0 100 pF 50 DG417/418: ID(on) DG419: ID(off), ID(on) –10 0 –20 –30 –50 –15 –10 –5 0 5 10 15 –15 –10 VD or VS – Drain or Source Voltage (V) –5 0 5 10 15 VS – Source Voltage (V) Input Switching Threshold vs. Supply Voltages 3.5 3.0 V TH (V) 2.5 VL = 7 V 2.0 1.5 VL = 5 V 1.0 0.5 0 (V+) 5 10 Document Number: 70051 S-52433—Rev. E, 06-Sep-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 15 20 25 30 35 40 www.siliconix.com S FaxBack 408-970-5600 5 DG417/418/419 Vishay Siliconix _ Switching Time vs. Temperature Crosstalk and Off Isolation vs. Frequency 140 120 V+ = 15 V, V– = –15 V VL = 5 V, VIN = 3 V Pulse 100 tON 120 DG417/418/419 Source 2 DG419 Source 1 80 tOFF (dB) t ON , t OFF (ns) 100 80 60 60 40 40 20 V+ = 15 V V– = –15 V VL = 5 V 20 0 0 –55 –40 –20 0 20 40 60 80 100 100 120 1k 10 k Temperature (_C) 100 k 1M 10 M 100 M f – Frequency (Hz) Switching Time vs. Supply Voltages Switching Time vs. V+ 130 80 120 110 100 tON V– = 0 V VL = 5 V VIN = 3 V t ON , t OFF (ns) t ON , t OFF (ns) 70 60 tON 90 V– = 0 V VL = 5 V VIN = 3 V 80 70 60 50 50 tOFF tOFF 40 40 10 30 11 12 13 14 15 16 10 11 Supply Voltage (V) 12 13 14 15 16 V+ Supply Voltage (V) Power Supply Currents vs. Switching Frequency Supply Current vs. Temperature 10 mA 1 mA V+ = 15 V, V– = –15 V VL = 5 V, VIN = 5 V, 50% D Cycle 100 nA V+ = 16.5 V, V– = –16.5 V VL = 5 V, VIN = 0 V 1 mA I SUPPLY I SUPPLY 10 nA 100 mA I+, I– 10 mA I+, I– 1 nA 100 pA IL IGND 10 pA 1 mA 1 pA 100 nA 100 1k 10 k 100 k 1M f – Frequency (Hz) www.siliconix.com S FaxBack 408-970-5600 6 Powered by ICminer.com Electronic-Library Service CopyRight 2003 10 M 0.1 pA –55 –40 –20 0 20 40 60 80 100 120 Temperature (_C) Document Number: 70051 S-52433—Rev. E, 06-Sep-99 DG417/418/419 Vishay Siliconix VO is the steady state output with the switch on. +5 V +15 V 3V Logic Input VL V+ 0V D S 10 V tr <20 ns tf <20 ns 50% VO tOFF IN RL 300 V– GND CL 35 pF –15 V CL (includes fixture and stray capacitance) Switch Input VS Switch Output 0V Note: RL VO = VS VO 90% tON Logic input waveform is inverted for switches that have the opposite logic sense. RL + rDS(on) FIGURE 2. Switching Time (DG417/418) +5 V +15 V Logic Input VL VS1 VS2 V+ S1 3V tr <20 ns tf <20 ns 0V D VO S2 RL 300 IN GND VS1 = VS2 VO CL 35 pF Switch Output V– 90% 0V tD tD CL (includes fixture and stray capacitance) –15 V FIGURE 3. Break-Before-Make (DG419) +5 V VL VS1 VS2 +15 V V+ S1 D VO Logic Input 3V 0V S2 RL 300 IN GND tr <20 ns tf <20 ns 50% tTRANS CL 35 pF tTRANS VS1 V01 V– 90% Switch Output VS2 –15 V V02 10% CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) FIGURE 4. Transition Time (DG419) Document Number: 70051 S-52433—Rev. E, 06-Sep-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.siliconix.com FaxBack 408-970-5600 7 DG417/418/419 Vishay Siliconix Rg +5 V +15 V VL V+ S DVO VO D VO IN g INX OFF CL 10 nF 3V ON V– GND OFF Q = DVO x CL –15 V FIGURE 5. Charge Injection +5 V +15 V C C +5 V VL S1 VS C D C Rg = 50 W VL 50 W VO VO D Rg = 50 W 0V, 2.4 V IN 0.8 V GND V+ S VS S2 RL +15 V V+ GND C V– RL IN C = RF bypass C –15 V –15 V XTALK Isolation = 20 log V– VS Off Isolation = 20 log VS VO VO FIGURE 6. Crosstalk (DG419) FIGURE 7. Off Isolation +5 V +15 V C C VL V+ S VS D VO Rg = 50 W 0V, 2.4 V RL IN GND V– C –15 V FIGURE 8. Insertion Loss www.siliconix.com FaxBack 408-970-5600 8 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Document Number: 70051 S-52433—Rev. E, 06-Sep-99 DG417/418/419 Vishay Siliconix +5 V +15 V +15 V C C VL V+ S V+ S2 DG417/418 IN GND V– 0 V, 2.4 V HP4192A Impedance Analyzer or Equivalent D Meter HP4192A Impedance Analyzer or Equivalent IN D2 D1 GND f = 1 MHz C S1 DG419 Meter 0 V, 2.4 V NC C V– C –15 V f = 1 MHz –15 V FIGURE 9. Source/Drain Capacitances Switched Signal Powers Analog Switch A positive input pulse turns on the clamping diode D1 and charges C1. The charge stored on C1 is used to power the chip; operation is satisfactory because the switch requires less than 1 mA of stand-by supply current. Loading of the signal source is imperceptible. The DG419’s on-resistance is a low 100 W for a 5-V input signal. The analog switch in Figure 10 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 kHz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. D1 C1 0.01 mF VL V+ S1 D VOUT Input S2 RL2 10 kW IN Control DG419 GND V– RL1 10 kW FIGURE 10.Switched Signal Powers Remote SPDT Analog Switch Document Number: 70051 S-52433—Rev. E, 06-Sep-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.siliconix.com FaxBack 408-970-5600 9 DG417/418/419 Vishay Siliconix Micropower UPS Transfer Switch Programmable Gain Amplifier When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 11. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of mA are sufficient to retain memory data. The DG419, as shown in Figure 12, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by rDS(on) variation as a function of analog signal amplitude. When the 5-V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new change of state in the analog switch, restoring normal operation. GaAs FET Driver The DG419, as shown in Figure 13 may be used as a GaAs FET driver. It translates a TTL control signal into –8-V, 0-V level outputs to drive the gate. V+ D1 SW1 VL D VCC (5 V) R1 VSENSE 453 kW S + DG417 Memory 3 V Li Cell – IN GND R2 383 kW V– FIGURE 11.Micropower UPS Circuit +5 V DG419 S1 S2 R1 VL R2 GaAs FET V+ S1 IN S2 D VOUT D VIN DG419 5V – VOUT GND V– + –8 V FIGURE 12.Programmable Gain Amplifier www.siliconix.com FaxBack 408-970-5600 10 Powered by ICminer.com Electronic-Library Service CopyRight 2003 FIGURE 13.GaAs FET Driver Document Number: 70051 S-52433—Rev. E, 06-Sep-99