DG271B New Product Vishay Siliconix High-Speed Quad Monolithic SPST CMOS Analog Switch Fast Settling Times Reduced Switching Glitches High Precision Fast Switching tON: 55 ns Low Charge Injection: 5 pC Low rDS(on): 32 TTL/CMOS Compatible Low Leakage: 50 pA High-Speed Switching Sample/Hold Digital Filters Op Amp Gain Switching Flight Control Systems Automatic Test Equipment Choppers Communication Systems The DG271B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup. Built on the Vishay Siliconix’ proprietary high voltage silicon gate process to achieve superior on/off performance, each The DG271B has a redesign internal regulator which improves start-up over the DG271. Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Logic Switch 0 ON 1 OFF Logic “0” 0 0.8 V Logic “1” 2.4 V Top View Temp Range Package Part Number 0 to 70C 16-Pin Plastic DIP DG271BCJ –40 to 85C 16-Pin Narrow SOIC DG271BDY Document Number: 70966 S-63985—Rev. A, 23-Aug-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.vishay.com FaxBack 408-970-5600 4-1 DG271B New Product Vishay Siliconix V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (DY Suffix) . . . . . . . . . . . . . . . . . . –65 to 150C (CJ Suffix) . . . . . . . . . . . . . . . . . . –65 to 125C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 75C d. Derate 7.6 mW/C above 75C C, D Suffix Test Conditions Unless Specified Parameter 0 to 70C –40 to 85C V+ = 15 V, V– = –15 V VIN = 2.4 V, 0.8 Vf Tempb Mind VANALOG Full –15 rDS(on) IS = 1 mA, VD = "10 V Room Full Symbol Typc Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance "0.05 1 20 Room Full –1 –20 "0.05 1 20 VS = VD = "14 V Room Full –1 –20 "0.05 1 20 VD = "14 V, VS = #14 V ID(on) + IS(on) W –1 –20 ID(off) Channel On Leakage Current V 50 75 Room Full IS(off) Switch Off Leakage Current 15 32 nA A Digital Control Input Current with Voltage High IINH Input Current with Voltage Low IINL VIN = 2 V Full –1 0.010 1 VIN = 15 V Full –1 0.010 1 VIN = 0 V Full –1 0.010 1 Room Full 55 65 80 Room Full 50 65 80 Room –5 8 mA A Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q VS = "10 V S Figure See Fi 3 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W See Figure 3 Source Off Capacitance CS(off) CD(off) VS = 0 V,, VIN = 5 V f = 1 MHz MH Room Drain Off Capacitance Room 8 Channel On Capacitance CD(on) VD = VS = 0 V, VIN = 0 V Room 30 Off Isolation OIRR Room 85 Crosstalk XTALK CL = 10 pF, RL = 1 kW f = 100 kHz See Figures 4 and 5 Room 100 Room Full 5.5 ns pC pF F dB Supply Positive Supply Current I+ Negative Supply Current I– All Channels On or Off VIN = 5 V or 0 V Room Full –6 –8 –3.4 7.5 9 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com FaxBack 408-970-5600 4-2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Document Number: 70966 S-63985—Rev. A, 23-Aug-99 DG271B New Product Vishay Siliconix rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 50 V+ = 15 V V– = –15 V 60 50 r DS(on)– Drain-Source On-Resistance ( ) r DS(on)– Drain-Source On-Resistance ( ) 70 5 V 40 10 V 30 15 V 20 20 V 10 0 –20 –16 –12 –8 –4 0 4 8 12 16 20 40 125C 85C 30 25C 20 0C –55C 10 0 –15 –10 –5 VD – Drain Voltage (V) 0 5 10 15 VD – Drain Voltage (V) Leakage Currents vs. Temperature Input Switching Threshold vs. Supply Voltage 10 nA 2.5 ID(on) 2 Leakage V IN ( V ) 1 nA 1.5 1 IS(off), ID(off) 100 pA 0.5 0 4 6 8 10 12 14 16 10 pA 18 20 –55 –35 –15 Positive/Negative Supplies (V) 45 65 85 105 125 Switching Time vs. Power Supply Voltage Switching Times vs. Temperature 55 V+ = 15 V V– = –15 V tON 50 Switching Time (ns) 50 Switching Time (ns) 25 Temperature (C) 55 45 tOFF 40 45 tON 40 35 35 30 –55 5 tOFF 30 –25 0 25 50 75 100 Temperature (C) Document Number: 70966 S-63985—Rev. A, 23-Aug-99 Powered by ICminer.com Electronic-Library Service CopyRight 2003 125 4 6 8 10 12 14 16 18 20 Supply Voltage (V) www.vishay.com FaxBack 408-970-5600 4-3 DG271B New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Switching Times vs. Temperature Switching Times vs. Power Supply Voltage 90 180 V+ = 15 V V– = –15 V 80 160 Switching Time (ns) Switching Time (ns) 140 70 t(on) 60 50 t(off) 120 t(on) 100 80 40 t(off) 60 30 –55 –35 –15 5 25 45 65 85 105 40 4 125 6 Temperature (C) 8 10 12 14 16 18 20 V+ – Positive Supply (V) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX 5V Reg V– Level Shift/ Drive V+ INX DX GND V– FIGURE 1. TEST CIRCUITS +15 V Logic Input V+ 10 V D S VO IN 5V GND V– RL 1 k CL 35 pF 5V tr <20 ns tf <20 ns 50% 0V tOFF Switch Input VS Switch Output VO VO 90% tON CL (includes fixture and stray capacitance) –15 V VO = VS RL RL + rDS(on) FIGURE 2. Switching Time www.vishay.com FaxBack 408-970-5600 4-4 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Document Number: 70966 S-63985—Rev. A, 23-Aug-99