UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<55mΩ @VGS=-4.5V * RDS(ON)<80mΩ @VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2321L-AE3-R UT2321G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING 231 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-249.D UT2321 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 2) ID -3.8 A Pulsed Drain Current (Note 2) IDM -15.2 A Power Dissipation PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient MIN TYP MAX 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS(Note) Gate-Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS=0V, ID=-250µA VDS=-16V, VGS=0V VGS=12V, VDS=0V VGS=-12V, VDS=0V -20 VDS=VGS, ID=-250µA VGS=-4.5V, ID=-2.4A VGS=-2.5V, ID=-2.0A -0.4 DYNAMIC PARAMETERS Input Capacitance CISS VDS=-10 V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=-10V, VGS=-4.5V, ID=-2.4A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=6 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage(Note) VSD VGS=0V, IS =-0.42A Maximum Body-Diode Continuous IS Current Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 45 65 MAX UNIT -1 100 -100 V µA nA nA -1.0 55 80 V mΩ mΩ 1500 270 185 14.8 2.8 4.4 13 8 65 29 pF pF pF 19 24 24 256 72 nC nC nC ns ns ns ns -1.2 V -0.42 A 2 of 4 QW-R502-249.D UT2321 TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-249.D UT2321 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-249.D