Bulletin PD -2.362 rev. D 12/00 HFA12PA120C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6A Qrr (typ.)= 116nC IRRM(typ.) = 4.4A Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count trr(typ.) = 26ns di(rec)M/dt (typ.)* = 100A/µs TO-247AC Description International Rectifier's HFA12PA120C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which results in performance which is unsurpassed by any rectifier previously available. The HFA12PA120C has basic ratings of 1200 volts and 6 amps per leg continuous current. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snapoff" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA12PA120C is ideally suited for applications in power supplies and power conversion systems (such as inverters, converters, UPS systems, and power factor correction circuits), motor drives, and many other similar applications where high speed, high efficiency is needed. VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 6.0 80 24 62.5 25 -55 to +150 Units V A W °C * 125°C 1 HFA12PA120C Bulletin PD-2.362 rev. D 12/00 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR Cathode Anode Breakdown Min. Typ. Max. Units 1200 ––– ––– ––– 2.7 3.0 ––– 3.5 3.9 ––– 2.4 2.8 ––– 0.26 5.0 V Test Conditions IR = 100µA Voltage VFM Max. Forward Voltage IF = 6.0A V IF = 12A IF = 6.0A, TJ = 125°C IRM Max. Reverse Leakage Current ––– 110 500 CT Junction Capacitance ––– 9.0 14 pF VR = 200V LS Series Inductance ––– 8.0 ––– nH Measured lead to lead 5mm from pkg body µA VR = VR Rated TJ = 125°C, VR = 0.8 x VR RatedD R Rated Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units ––– 26 ––– trr1 ––– 53 80 trr2 ––– 87 130 ––– 4.4 8.0 ––– 5.0 9.0 ––– 116 320 ––– 233 585 trr Reverse Recovery Time IRRM1 Peak Recovery Current IRRM2 Qrr1 Reverse Recovery Charge Qrr2 di(rec)M/dt1 Peak Rate of Recovery ––– 180 ––– di(rec)M/dt2 Current During tb ––– 100 ––– Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V ns TJ = 25°C TJ = 125°C A IF = 6.0A TJ = 25°C TJ = 125°C nC A/µs VR = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead ! RthJC RthJA Min. Typ. Max. Units Lead Temperature –––– –––– 300 °C Thermal Resistance, Junction to Case –––– –––– 2.0 Thermal Resistance, Junction to Ambient –––– –––– 80 RthCS $ Thermal Resistance, Case to Heat Sink –––– 0.5 –––– Wt Weight –––– 2.0 –––– –––– 0.07 –––– (oz) Mounting Torque 6.0 –––– 12 Kg-cm 5.0 –––– 10 lbf•in " K/W g ! 0.063 in. from Case (1.6mm) for 10 sec "#Typical Socket Mount $ Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA12PA120C Bulletin PD-2.362 rev. D 12/00 100 1000 TJ = 150˚C Reverse Current - IR (µA) 100 100˚C 10 1 25˚C 0.1 0.01 0 200 400 600 800 1000 1200 1400 Reverse Voltage - VR (V) 100 1 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 10 125˚C T = 150˚C J T = 125˚C J T = 25˚C J 0.1 T = 25˚C J 10 1 0 2 4 Forward Voltage Drop - VFM (V) 6 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.1 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = 1t / t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 HFA12PA120C Bulletin PD-2.362 rev. D 12/00 25 110 IF = 6 A IF = 4 A 100 VR = 200V TJ = 125˚C TJ = 25˚C 20 90 IF = 6 A IF = 4 A 15 70 Irr - ( A) trr - ( nC ) 80 60 10 50 40 5 VR = 200V TJ = 125˚C TJ = 25˚C 30 20 100 0 100 1000 1000 dif /dt - (A/µs ) dif /dt - (A/µs ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt Fig. 6 - Typical Recovery Current Vs. dif /dt 10000 1000 VR = 200V TJ = 125˚C TJ = 25˚C 800 di(REC) M/dt - (A/µs ) Qrr - ( nC ) IF = 6 A IF = 4 A 600 400 IF = 6 A IF = 4 A 1000 100 VR = 200V TJ = 125˚C TJ = 25˚C 200 0 100 4 1000 10 100 1000 dif /dt - (A/µs ) dif /dt - (A/µs ) Fig. 8 - Typical Stored Charge vs. dif /dt Fig. 7 - Typical di(REC) M/dt vs. dif /dt www.irf.com HFA12PA120C Bulletin PD-2.362 rev. D 12/00 REVERSE RECOVERY CIRCUIT VR = 200V 0.01 Ω L = 70µH D.U.T. D dif/dt ADJUST IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 t rr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 3. trr - Reverse recovery 2 time measured from zero crossing point of negative going IF to point where a line 5. di(rec)M/dt - Peak rate of passing through 0.75 IRRM change of current during tb and 0.50 IRRM portion of trr extrapolated to zero current Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA12PA120C Bulletin PD-2.362 rev. D 12/00 Outline Table 3. 65 ( 0 .14 4) 15 .90 (0 .626 ) 3. 55 (0 .13 9) 5. 30 (0 .20 9) DIA. 4.70 ( 0.185) 15 .30 (0 .602 ) 2.5 ( 0.098) 1.5 ( 0.059) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 (2 PLCS.) 3 14. 80 ( 0.583) 4. 30 (0 .17 0) 14 .20 (0 .559 ) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1. 40 ( 0 .05 6) 2. 40 (0 .09 5) M AX . MAX. 1. 00 ( 0 .03 9) 0.80 ( 0.032) 0. 40 (0 .21 3) 10. 94 ( 0.430) 10 .86 (0 .427 ) Conforms to JEDEC Outline TO-247AC Dimensions in millimeters and inches Ordering Information Table Device Code 1 - Hexfred Family 2 - Process Designator HF A 12 1 2 3 PA 120 4 5 C 6 A = A subs. elec. irrad. B = B subs. Platinum 6 3 - Average Current: Code 12 = 12 AMPS 4 - Package Outline: Code PA = TO-247 3 Lead 5 - Voltage code : Code 120 = 1200 V 6 - Configuration : Code C = Center Tap Common Cathode www.irf.com HFA12PA120C Bulletin PD-2.362 rev. D 12/00 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice 7