HL6512MG Visible High Power Laser Diode for DVD-RAM ADE-208-1455A (Z) Rev.1 Jan. 2002 Description The HL6512MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. The characteristic makes it possible to suppress the variation of spot size between higher and lower output powers. Therefore, it is suitable as a light source for large capacity rewritable optical disc memories, such as DVD-RAM, and various other types of optical equipment. Hermetic sealing of the small package (φ 5.6mm) assures high reliability. Application • Optical disc memories • Optical equipment Features • High output power and Wide operating temperature : 70 mW (pulse), PW = 100ns, duty = 50%, (Topr = 70°C) • Small package : φ 5.6 mm • Visible light output : λp = 658 nm Typ • The beam divergence (parallel to the junction) has a small variation to the output power. Package Type • HL6512MG: MG Internal Circuit 1 3 LD 2 HL6512MG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 50 mW 1 Pulse optical output power PO(pulse) 70 * mW Laser diode reverse voltage VR(LD) 2 Operating temperature Topr −10 to +70 * °C Storage temperature Tstg −40 to +85 °C V 2 Notes: 1. Pulse condition : Pulse width = 100 ns, duty = 50% 2. The value of −10 to +70°C is effective under pulse operation. The value under CW operation is −10 to +60°C. Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 50 — — mW Kink free * Pulse optical output power PO(pulse) 70 — — mW Kink free * Threshold current Ith 30 45 60 mA — Operating current Iop — 115 135 mA PO = 50 mW Operating voltage VOP 2.1 2.6 3.0 V PO = 50 mW Beam divergence parallel to the junction θ// 7 8.5 11 deg. PO = 50 mW Beam divergence parpendicular to the junction θ⊥ 18 21 26 deg. PO = 50 mW Astigmatism AS — 5 — µm PO = 5 mW, NA = 0.55 Lasing wavelength λp 650 658 662 nm PO = 50 mW Note: Kink free is confirmed at the temperature of 25°C. Rev.1, Jan. 2002, page 2 of 8 HL6512MG Optical Output Power vs.Forward Current 50 TC = 25˚C 40 TC = 0˚C 30 TC = 60˚C 20 10 0 0 40 80 120 160 Pulse Optical Output Power vs. Forward Current 80 TC = 25˚C Optical output power, PO (mW) Optical output power, PO (mW) Typical Characteristic Curves TC = 0˚C 60 40 TC = 70˚C 20 Pw = 100ns duty = 50% 0 200 0 50 Forward current, IF (mA) 30 10 20 30 40 50 60 200 250 Slope Efficiency vs. Case Temperature 1.0 Slope efficiency, ηS (mW/mA) Threshold current, Ith (mA) 50 0 150 Forward current, IF (mA) Threshold Current vs. Case Temperature 100 10 100 70 80 Case temperature, TC (°C) 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 Case temperature,TC (°C) Rev.1, Jan. 2002, page 3 of 8 HL6512MG Typical Characteristic Curves (cont) Wavelength vs. Case Temperature Lasing Specturn 675 Lasing Wavelength, λp (nm) TC = 25˚C Relative intensity PO = 50mW PO = 35mW PO = 10mW PO = 5mW 655 660 665 PO = 50mW 670 665 660 655 650 0 10 Wavelength, λp (nm) Far Field Pattern Perpendicular 0.6 0.4 Parallel 0.2 0 –40 –30 –20 –10 0 10 20 30 40 Angle, (deg.) Rev.1, Jan. 2002, page 4 of 8 40 50 60 70 80 Beam Divergence vs. Optical Output Power 25 TC = 25˚C Beam divergence, (deg) Relative intensity 0.8 30 Case temperature, TC (°C) 1.0 PO = 50mW TC = 25˚C 20 20 Perpendicular 15 Parallel 10 5 0 10 20 30 40 50 Optical output power, PO (mW) HL6512MG Typical Characteristic Curves (cont) Frequency Response TC = 25˚C NA = 0.55 PO = 3mW Gain, (dB) Astigmatism, AS (µm) 3dB/div Astigmatism vs. Oputical Output Power 10 1M 10M 100M Frequency, (Hz) 1G 3G 8 6 4 2 0 0 10 20 30 40 50 Optical output power, PO (mW) Rev.1, Jan. 2002, page 5 of 8 HL6512MG Package Dimensions As of July, 2001 Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90˚) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC JEITA Mass (reference value) Rev.1, Jan. 2002, page 6 of 8 LD/MG — — 0.3 g HL6512MG Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. Rev.1, Jan. 2002, page 7 of 8 HL6512MG Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Jan. 2002, page 8 of 8