HL6335G/36G Circular Beam Low Operating Current ADE-208-1419C (Z) Rev.3 Mar. 2002 Description The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement. Application • Laser leveler • Laser scanner • Measurement Features • Optical output power : 5 mW CW • Visible light output : 635 nm Typ • Low operating current : 25 mA Typ • Low aspect ratio : 1.2 Typ (almost circular beam) • Operating temperature : +50°C • TM mode oscillation Package Type • HL6335/36G: G2 Internal Circuit • HL6335G 1 Internal Circuit • HL6336G 3 PD 1 LD 2 3 PD LD 2 HL6335G/36G Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 5 mW Pulse optical output power PO(Pulse) 6* mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Note: Pulse condition : Pulse width ≤ 1 µs, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Optical output power PO 5 — — mW Kink free Threshold current Ith — 20 30 mA Slope efficiency ηs 0.5 0.8 1.1 mW/mA 3 (mW) / (I(4mW) – I(1mW)) Operating current IOP — 25 40 mA PO = 5 mW Operating voltage VOP — 2.4 2.7 V PO = 5 mW Lasing wavelength λp 630 635 640 nm PO = 5 mW Beam divergence parallel to the junction θ// 13 17 25 deg. PO = 5 mW Beam divergence parpendicular to the junction θ⊥ 16 20 25 deg. PO = 5 mW Aspect ratio θ⊥/θ// — 1.2 1.5 — PO = 5 mW Monitor current IS 0.03 0.07 0.12 mA PO = 5 mW, VR(PD) = 5 V Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as by ESD. 2. The wavefront performance is not guaranteed. 3. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Rev.3, Mar. 2002, page 2 of 10 HL6335G/36G Monitor Current vs.Optical Output Power Opticai Output Power vs. Foward Current 5 TC = 10˚C 0.10 4 0.08 40˚C 25˚C Monitor current, IS (mA) Optical output power, PO (mW) Typical Characteristic Curves 50˚C 3 2 1 0 0 10 20 30 40 50 Foward current, IF (mA) 0.06 0.04 0.02 0 60 1.0 0.8 0.6 0.4 0.2 0 –10 0 10 20 30 40 Case temperature, TC (˚C) 50 0 1 2 3 4 Optical output power, PO (mW) 5 Threshold Current vs. The Case Temperature 100 Threshold current, Ith (mA) Slope efficiency, ηs (mW/mA) Slope Efficiency vs. The Case Temperature 1.4 1.2 VR(PD) = 5V TC = 25˚C 50 20 10 –10 0 10 20 30 40 Case temperature TC (˚C) 50 Rev.3, Mar. 2002, page 3 of 10 Monitor Current vs. The Case Temperature 0.10 PO = 5mW VR = 5V 0.08 0.06 0.04 0.02 0 –10 0 10 20 30 40 Case temperature, TC (°C) Lasing Wavelength vs. The Case Temperature 645 PO = 5mW Lasing wavelength, lp (nm) Monitor current, IS (mA) HL6335G/36G 640 635 630 625 –10 50 Lasing Spectrum 50 Polarization Ratio vs. Optical Output Power 250 TC = 25°C NA = 0.55 TC = 25°C 200 PO = 3mW Polarization ratio PO = 5mW Relative intensity 0 10 20 30 40 Case temperature TC (°C) 150 100 50 PO = 1mW 625 630 635 640 Wavelength, lp (nm) Rev.3, Mar. 2002, page 4 of 10 645 0 0 1 2 3 4 Optical output power, PO (mW) 5 HL6335G/36G Astigmastism vs. Optical Output Power 5 TC = 25˚C NA = 0.55 Relative intensity 1.0 PO = 5mW 0.8 TC = 25˚C Perpendicular 0.6 0.4 Parallel 0.2 0 –40 –30 –20 –10 0 10 20 Angle, θ (deg.) 30 Astigmastism, AS (µm) Far Field Pattern 4 3 2 1 40 0 0 100 80 80 Survival rate (%) Survival rate (%) 100 60 Forward (C : 100pF, R : 1.5kΩ) N=10pcs ∆IO ≤ 10% judgment 20 0 5 Electrostatic Destruction Electrostatic Destruction 40 4 1 2 3 Optical output power, PO (mW) 60 Reverce (C : 100pF, R : 1.5kΩ) N=10pcs ∆IO ≤ 10% judgment 40 20 0 0 100 200 Applied voltage (V) 300 0 0.5 1.0 Applied voltage (kV) 1.5 Rev.3, Mar. 2002, page 5 of 10 HL6335G/36G Package Dimensions 0.4 +0.1 –0 Unit: mm φ 9.0 +0 –0.025 1.0 ± 0.1 9±1 2.45 Emitting Point 3 – φ 0.45 ± 0.1 1 2 1.5 ± 0.1 Glass 12° *1 φ 7.2 +0.3 –0.2 φ 6.2 ± 0.2 (φ2.0) 3.5 ± 0.2 0.3 (90°) (0.65) 3 1 12° * 3 1 2 φ 2.54 ± 0.35 Note: 1. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Hitachi Code JEDEC JEITA Mass (reference value) Rev.3, Mar. 2002, page 6 of 10 LD/G2 — — 1.1 g HL6335G/36G The Cautions on the Handing of HL6335G/36G As laser diode differ from silicon devices, the area of safe operation (ASO) of laser diodes is not decided by power consumption alone, but optical output must be considered from view point of optical damage. These products are more sensitive to static electricity or an surge current than the conventional product. The following is test data of ESD (electric static damage). The operating condition should be within 5 mW and the working please should be keep small static electricity level such as 20 V less and small surge current such as 40 mA less from out. 1. Electrostatic destructive examination data : HL6335G : HL6312G 100 Survival rate (%) Survival rate (%) 100 80 60 N=5 R = 1.5kΩ C = 100pF Forward 40 20 0 0 60 N=5 R = 1.5kΩ C = 100pF Reverse 40 20 0 600 800 200 400 Applied voltage VCC (V) 100 0 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage VCC (kV) 100 Survival rate (%) Survival rate (%) 80 80 60 40 N = 5 R=0 20 C = 200pF Forward 0 0 20 40 60 80 100 120 Applied voltage VCC (V) C 60 40 DUT N=5 R=0 C = 200pF Reverse 20 0 R VCC 80 0 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage VCC (kV) Step stress test (5 times/voltage) Failure criteria ∆IOP ≥ 10% Rev.3, Mar. 2002, page 7 of 10 HL6335G/36G Applied voltage, VCC (V) 2. Clamp Capacitance vs. ESD of HL6335G/36G 600 R = 1.5kΩ, C = 100pF 500 400 VCC 300 C R = 0, C = 200pF 100 CO 10 0 0.002 0.004 0.006 0.008 Capacitance, CO (µF) Step stress tast (5 times/voltage) Failure criteria ∆IOP ≥ 10% 0.010 120 PW 100 80 60 40 20 0 10µ 100µ 1m 10m 100m Applied puls width, PW (s) 1 distribution of IOP (mA) Applied current, IF (mA) RO = 2.2kΩ 200 3. Applied puls width vs. Applied current 4. Catastrophic optical damage of HL6335G/36G N (pcs) R DUT 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 Destructive optical output power, PCOD (mW) Rev.3, Mar. 2002, page 8 of 10 IF TC = 25˚C 1 shot n = 10pcs HL6335G/36G Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. Rev.3, Mar. 2002, page 9 of 10 HL6335G/36G Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.3, Mar. 2002, page 10 of 10