ETC IPS511E

PD - 94269
IPS511E
FULLY PROTECTED HIGH SIDE
POWER MOSFET SWITCH
Features
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Product Summary
Over temperature protection (with auto-restart)
Short-circuit protection (current limit )
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
Rds(on)
150mΩ (max)
V clamp
50V
I Limit
5A
V open load
3V
Description
The IPS511E is fully protected five terminal high side
switch with built in short circuit, over-temperature, ESD
protection, inductive load capability and diagnostic
feedback. The output current is controlled when it
reaches Ilim value. The current limitation is activated
until the thermal protection acts. The over-temperature protection turns off the high side switch if the
junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled
7oC below Tshutdown. A diagnostic pin is provided
for status feedback of short-circuit, over-temperature
and open load detection. The double level shifter
circuitry allows large offsets between the logic ground
and the load ground.
Typical Connection
Truth Table
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
Out
H
H
L
L
H
H
L
H
H L (limiting)
L
L
H L (cycling)
L
L
Dg
H
L
H
H
L
L
L
L
Packages
+ VCC
+ 5v
15K
Status
feedback
Output pull-up resistor
Vcc
Dg
Logic
Rdg
Rin
Logic
signal
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control
Out
In
Gnd
Load
Logic Gnd
Load Gnd
LCC 18
1
6/18/01
IPS511E
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).
Symbol Parameter
Min.
Vout
Voffset
Maximum output voltage
Vcc-50
Maximum logic ground to load ground offset Vcc-50
Vin
Maximum Input voltage
Vcc max
Iin, max.
Maximum Vcc voltage
Maximum IN current
Vdg
Idg, max
Isd cont.
Max.
Units
Test Conditions
Vcc+0.3
Vcc+0.3
V
-0.3
5.5
—
-5
50
10
mA
Maximum diagnostic output voltage
-0.3
5.5
V
Maximum diagnostic output current
Diode max. permanent current (1)
-1
10
mA
—
2.2
Isd pulsed Diode max. pulsed current (1)
ESD1
Electrostatic discharge voltage (Human Body)
—
10
—
4
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
Pd
Maximum power dissipation(1)
—
20
T j max.
Max. storage & operating junction temp.
-40
+150
T lead
Lead temperature (soldering 10 seconds)
—
300
Min.
Typ.
—
—
6.25
A
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
W
o
C
Thermal Characteristics
Symbol Parameter
Rth 1
Rth 2
Thermal resistance junction to case
Thermal resistance junction to ambient
90
Max. Units Test Conditions
—
—
o
C/W
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS511E
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Vcc
VIH
VIL
I out
5.5
4
-0.3
35
5.5
0.9
—
—
4
10
1.7
1.5
6
20
Rin
Rdg
Continuous Vcc voltage
High level input voltage
Low level input voltage
Continuous output current
(TAmbient = 85oC, Tj = 125oC, Rth < 60oC/W)
(TAmbient = 85oC, Tj = 125oC, Rth = 80oC/W)
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
Units
V
A
kΩ
Static Electrical Characteristics
(Tj = 25oC, Vcc = 14V unless otherwise specified.)
Symbol Parameter
Min.
Typ.
ON state resistance
—
125
150
R ds(on)
ON state resistance
—
125
150
R ds(on)
ON state resistance
—
215
—
Vcc oper.
V clamp 1
V clamp 2
Vf
Icc off
Icc on
Icc ac
V dgl
I oh
I ol
Idg
Operating voltage range
Vcc to OUT clamp voltage 1
Vcc to OUT clamp voltage 2
Body diode forward voltage
Supply current when OFF
Supply current when ON
Ripple current when ON (AC RMS)
Low level diagnostic output voltage
Output leakage current
Output leakage current
5.5
50
—
—
—
—
—
—
—
0
—
56
58
0.9
16
0.7
20
0.15
60
—
35
—
65
1.2
50
2
—
0.4
110
25
leakage
Diagnostic output leakage current
IN high threshold voltage
IN low threshold voltage
On state IN positive current
Input hysteresis
—
—
1
—
0.1
—
2.3
1.95
70
0.25
10
3
—
200
0.5
R ds(on)
V ih
V il
Iin, on
In hyst.
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Max. Units Test Conditions
mΩ
V
µA
mA
µA
V
µA
Vin = 5V, Iout = 2.5A
Tj = 25oC
Vin = 5V, Iout = 1A
Vcc = 6V
Vin = 5V, Iout = 2.5A
Tj = 150oC
Id = 10mA (see Fig.1 & 2)
Id = Isd (see Fig.1 & 2)
Id = 2.5A, Vin = 0V
Vin = 0V, Vout = 0V
Vin = 5V
Vin = 5V
Idg = 1.6 mA
Vout = 6V
Vout = 0V
Vdg = 5.5V
V
µA
V
Vin = 5V
3
IPS511E
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5.6Ω, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Min.
Tdon
Turn-on delay time
Tr1
Rise time to Vout = Vcc - 5V
Tr2
Rise time Vcc - 5V to Vout = 90% of Vcc
dV/dt (on) Turn ON dV/dt
Eon
Turn ON energy
T doff
Turn-off delay time
Tf
Fall time to Vout = 10% of Vcc
dV/dt (off) Turn OFF dV/dt
Eoff
Turn OFF energy
Tdiag
Vout to Vdiag propagation delay
Typ. Max. Units Test Conditions
—
—
—
—
—
—
—
—
—
—
7
10
45
1.3
400
15
10
2
80
5
Min.
Typ.
3
—
—
2
2
5
165
158
3
3
50
50
100
4
—
50
50
6
—
15
µs
See figure 3
V/µs
µJ
µs
V/µs
µJ
µs
See figure 4
See figure 6
Protection Characteristics
Symbol Parameter
I lim
Internal current limit
T sd+
Over-temp. positive going threshold
T sdOver-temp. negative going threshold
V sc
Short-circuit detection voltage (3)
Vopen load Open load detection threshold
Max. Units Test Conditions
7
—
—
4
4
A
C
o
C
V
V
o
Vout = 0V
See fig. 2
See fig. 2
See fig. 2
(3) Referenced to Vcc
Pad Assignments
NC
NC
NC
VCC
GND
NC
NC
VCC
IN
VCC
DG
NC
SOURCE
4
NC
NC
NC
NC
SOURCE
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IPS511E
Functional Block Diagram
All values are typical
VCC
50V
Over
temperature
165°C
158°C
Tj
Charge
pump
62 V
2.7 V
Level
IN
2.2 V
7 V
driver
shift
200 KΩ
Current
limit
DG
+
5A
7 V
20 Ω
3V
+
+
Short-circuit
Open load
GND
-
3V
VOUT
T clamp
Vin
5V
0V
Vin
Iout
limiting
T shutdown
cycling
Ilim.
Iout
( + Vcc )
0V
Out
T
V clamp
Tsd+
Tsd(160 ° )
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Active clamp waveforms
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Figure 2 - Protection timing diagram
5
IPS511E
Vin
Vcc
90%
Vin
Vcc - 5V
Vout
dV/dt on
90%
10%
Td on
dV/dt off
Tr 1
Vout
Tr 2
E1(t)
10%
Iout1
Eon1
Iout2
Resistive load
Td off
E2 (t)
Tf
Inductive load
Eon2
Figure 4 - Switching times definition (turn-off)
Figure 3 - Switching times definition (turn-on)
Turn on energy with a resistive or an
inductive load
V in
Dg Vcc
V cc
V c c -V sc
IN
Out
+
Gnd
L
Vin
14 V
V o ut
Vout
Vol
R
V d iag
5v
0v
Iout
D ia g o ff b la n k in g
D ia g o n b la nk in g
Rem :
V load is negative during demagnetization
Figure 5 - Active clamp test circuit
6
T d ia g
Figure 6 - Diagnostic delay definitions
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IPS511E
150
200%
100
150%
50
100%
0
50%
0
5
10
15
20
25
30
-5 0
35
0
50
100
150
Figure 8 - Normalized Rds(on) (%) Vs Tj (oC)
Figure 7 - Rds(on) (mΩ) Vs Vcc (V)
150
10
100
1
50
0.1
0
0
1
2
3
4
Figure 9 - Rds(on) (mΩ) Vs Iout (A)
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5
Figure 10 - Max. Iout (A) Vs Load Inductance (uH)
7
IPS511E
5
5
Rthja= 20°C/W
Rthja= 10°C/W
4
4
1inch² footprint
Rthja= 35°C/W
Rthja= 40°C/W
3
3
Free air
2
2
1
1
0
Std. footprint
Rthja= 60°C/W
0
25
50
75
100
125
150
Figure 11a - Max load current (A) Vs Tamb (oC)
100
25
50
75
100
125
150
Figure 11b - Max load current (A) Vs Tamb (oC)
6
5
10
4
1
3
2
0 .1
1
0 .0 1
Figure 12 - Transient Thermal Impedance (oC/W)
Vs Time (S)
8
0
-50
0
50
100
150
Figure 13 - Ilim (A) Vs Tj (oC)
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IPS511E
Resistive load
600
10000
1000
I=Imax vs Induct.(see fig.10)
Eon
400
Eoff
100
I=1.5A
10
200
Figure 14 - Eon, Eoff (µJ) (A) Vs Iout (A)
0.1
1E+06
3
1E+05
2
1E+04
1
1E+03
0
1E+02
0
1E+01
1
Figure 15 - Eon (µJ) Vs Load Inductance (µH)
(see Fig. 3)
150
1.00E-03
125
Diag on blanking
100
1.00E-04
75
50
1.00E-05
25
Diag off blanking
0
0
1
2
Figure 16 - Diag Blanking time (µS) Vs Iout (A)
(resistive load - see Fig. 6)
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3
1.00E-06
0
5
10
15
20
25
30
35
Figure 17 - Icc (mA) Vs Vcc (V)
9
IPS511E
150
125
100
75
50
25
0
-50 -25
0
25
50
75 100 125 150
Figure 18 - Iin @ Vin = 5V (µA) Vs Tj (oC)
Case Outline
LCC-18
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Data and specifications subject to change without notice. 06/01
10
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