Data Sheet No.PD 60155H IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Rds(on) 135mΩ (max) V clamp 50V I Limit 5A V open load 3V Description The IPS511/IPS511S are fully protected five terminal high side switches with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches I lim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7 oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Typical Connection Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L Packages + VCC + 5v 15K Status feedback Output pull-up resistor Vcc Dg Logic Rdg Rin Logic signal www.irf.com 5 Lead D2Pak (SMD220 IPS511S control Out In Gnd Load Logic Gnd Load Gnd 5 Lead TO220 IPS511 1 IPS511/IPS511S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified). Symbol Parameter Min. Vcc-50 Maximum logic ground to load ground offset Vcc-50 Max. Units Vout Voffset Maximum output voltage Vin Vcc max Iin, max. Maximum Input voltage -0.3 5.5 Maximum Vcc voltage Maximum IN current — -5 50 10 mA Vdg Idg, max Maximum diagnostic output voltage -0.3 5.5 V mA Test Conditions Vcc+0.3 Vcc+0.3 Maximum diagnostic output current Isd cont. Diode max. permanent current (1) Isd pulsed Diode max. pulsed current (1) -1 10 — 2.2 — 10 ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 V A C=100pF, R=1500Ω, kV C=200pF, R=0Ω, L=10µH (1) Pd Maximum power dissipation (TC=25oC) IPS511 (rth=80 oC/W) IPS511S — 25 — 1.56 Tj max. Max. storage & operating junction temp. -40 +150 Tlead Lead temperature (soldering 10 seconds) — 300 Min. Typ. — — — — — # W o C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance junction to case junction to ambient with standard footprint with 1" square footprint junction to case $ 60 40 # Max. Units Test Conditions — — — — — TO-220 o C/W D2PAK (SMD220) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS511/IPS511S Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vcc VIH VIL Iout 5.5 4 -0.3 35 5.5 0.9 — — 4 10 1.7 1.5 6 20 Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current Tamb=85 oC (TAmbient = 85oC, Tj = 125oC, Rth < 60oC/W) IPS511 (TAmbient = 85oC, Tj = 125oC, Rth = 80oC/W) IPS511 Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin Units V A kΩ Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. ON state resistance Tj = 25oC — 110 135 ON state resistance @ Vcc = 6V — 110 135 ON state resistance Tj = 150oC — 200 — Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Ioh Iol Idg Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current 5.5 50 — — — — — — — 0 — 56 58 0.9 16 0.7 20 0.15 60 — 35 — 65 1.2 50 2 — 0.4 110 25 leakage Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis — — 1 — 0.1 — 2.3 1.95 70 0.25 10 3 — 200 0.5 Rds(on) Max. Units Test Conditions Vin = 5V, Iout = 2.5A @Tj=25o C Rds(on) (V cc=6V) Rds(on) mΩ Vin = 5V, Iout = 1A Vin = 5V, Iout = 2.5A @Tj=150oC Vih Vil Iin, on In hyst. www.irf.com V µA mA µA V µA Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V V µA V Vin = 5V 3 IPS511/IPS511S Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5.6Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Tdon Turn-on delay time Tr1 Rise time to Vout = Vcc - 5V Tr2 Rise time Vcc - 5V to Vout = 90% of Vcc dV/dt (on) Turn ON dV/dt E on Turn ON energy T doff Turn-off delay time Tf Fall time to Vout = 10% of Vcc dV/dt (off) Turn OFF dV/dt Eoff Turn OFF energy Tdiag Vout to Vdiag propagation delay Typ. Max. Units Test Conditions — — — — — — — — — — 7 10 45 1.3 400 15 10 2 80 5 Min. Typ. 3 — — 2 2 5 165 158 3 3 50 50 100 4 — 50 50 6 — 15 µs See figure 3 V/µs µJ µs V/µs µJ µs See figure 4 See figure 6 Protection Characteristics Symbol Parameter Ilim Internal current limit T sd+ Over-temp. positive going threshold TsdOver-temp. negative going threshold V sc Short-circuit detection voltage (3) Vopen load Open load detection threshold Max. Units Test Conditions 7 — — 4 4 A C o C V V o Vout = 0V See fig. 2 See fig. 2 See fig. 2 (3) Referenced to Vcc Lead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out 12345 12345 5 Lead - D2PAK (SMD220) 5 Lead - TO220 IPS511 IPS511S Part Number 4 www.irf.com IPS511/IPS511S Functional Block Diagram All values are typical VCC 50V Over temperature 165°C 158°C Tj Charge pump 62 V 2.7 V IN Level shift 2.2 V 7 V 200 KΩ driver Current limit DG + 5A 7 V 20 Ω 3V + + Short-circuit Open load GND 3V - VOUT T clamp Vin 5V 0V Vin Iout limiting T shutdown cycling Ilim. Iout ( + Vcc ) 0V Out T V clamp Tsd+ Tsd(160 ° ) ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms www.irf.com Figure 2 - Protection timing diagram 5 IPS511/IPS511S Vin Vcc 90% Vin Vcc - 5V Vout dV/dt on 90% 10% Td on dV/dt off Tr 1 Vout Tr 2 E1(t) 10% Iout1 Eon1 Iout2 Resistive load Td off E2 (t) Tf Inductive load Eon2 Figure 4 - Switching times definition (turn-off) Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load V in Dg Vcc Vcc Vcc -Vsc IN Out + Gnd L Vin 14 V V o ut Vout Vol R V d ia g 5v 0v Iout Diag off blanking Diag on blanking Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit 6 T diag Figure 6 - Diagnostic delay definitions www.irf.com IPS511/IPS511S 150 2 00 % 100 1 50 % 50 1 00 % 0 5 0% 0 5 10 15 20 25 30 -5 0 35 0 50 100 150 Figure 8 - Normalized Rds(on) (%) Vs Tj (oC) Figure 7 - Rds(on) (mΩ) Vs Vcc (V) 150 10 100 1 50 0.1 0 0 1 2 3 4 Figure 9 - Rds(on) (mΩ) Vs Iout (A) www.irf.com 5 Figure 10 - Max. Iout (A) Vs Load Inductance (uH) 7 IPS511/IPS511S 5 5 Rthja= 20°C/W Rthja= 10°C/W 4 4 1inch² footprint Rthja= 35°C/W Rthja= 40°C/W 3 3 Free air 2 2 1 1 0 Std. footprint Rthja= 60°C/W 0 25 50 75 100 125 150 Figure 11a - Max load current (A) Vs Tamb (oC) IPS511 1 00 25 50 75 100 125 150 Figure 11b - Max load current (A) Vs Tamb (oC) IPS511S 6 5 10 4 1 3 2 0 .1 1 0 .0 1 0 -50 Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (S) 8 0 50 100 150 Figure 13 - Ilim (A) Vs Tj (oC) www.irf.com IPS511/IPS511S Resistive load 600 10000 1000 I=Imax vs Induct.(see fig.10) Eon 400 Eoff 100 I=1.5A 10 200 Figure 14 - Eon, Eoff (µJ) (A) Vs Iout (A) 0.1 1E+06 3 1E+05 2 1E+04 1 1E+03 0 1E+02 0 1E+01 1 Figure 15 - Eon (µJ) Vs Load Inductance (µH) (see Fig. 3) 150 1.00E-03 125 Diag on blanking 100 1.00E-04 75 50 1.00E-05 25 Diag off blanking 0 0 1 2 Figure 16 - Diag Blanking time (µS) Vs Iout (A) (resistive load - see Fig. 6) www.irf.com 3 1.00E-06 0 5 10 15 20 25 30 35 Figure 17 - Icc (mA) Vs Vcc (V) 9 IPS511/IPS511S 150 125 100 75 50 25 0 -50 -25 0 25 50 75 100 125 150 Figure 18 - Iin @ Vin = 5V (µA) Vs Tj (oC) Case Outline 5 Lead - TO220 IRGB 01-3042 01 10 www.irf.com IPS511/IPS511S Case Outline 5 Lead - D2PAK (SMD220) 01-3066 00 www.irf.com 11 IPS511/IPS511S Tape & Reel 5 Lead - D2PAK (SMD220) 01-3071 00 / 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 3/27/2000 12 www.irf.com