AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402 and AO3402L are electrically identical. -RoHS Compliant -AO3402L is Halogen Free VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 110mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 15 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 4 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W www.aosmd.com AO3402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1.4 V A VGS=4.5V, ID=3A 55 70 mΩ VGS=2.5V, ID=2A 83 110 mΩ 1 V 2.5 A VDS=5V, ID=4A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance nA 55 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg 100 80 Forward Transconductance Crss 1 µA 45 gFS Output Capacitance 5 66 TJ=125°C VSD Coss V TJ=55°C VGS=10V, ID=4A IS Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=4A VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω 8 0.8 mΩ S 390 pF 54.5 pF 41 pF 3 Ω 4.34 nC 0.6 nC 1.38 nC 3.3 ns 1 ns 21.7 ns 2.1 ns trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs 12 Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 6.3 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3V 12 8 6 ID(A) 9 ID (A) VDS=5V 4.5V 2.5V 4 6 125°C 3 2 VGS=2V 0 25°C 0 0 1 2 3 4 5 0 0.5 150 1.5 2 2.5 3 3.5 Normalized On-Resistance 1.8 125 VGS=2.5V RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 100 75 VGS=4.5V 50 25 VGS=10V 0 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0.8 0 2 4 6 8 10 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 ID=2A 100 1.0E-01 IS (A) RDS(ON) (mΩ) 150 125°C 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 1.0E-06 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO3402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 20 TJ(Max)=150°C TA=25°C 10.0 RDS(ON) limited 15 10µs 100µs Power (W) 100.0 ID (Amps) Crss 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com