AO7417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7417/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor. AO7417 and AO7417L are electrically identical. -RoHS Compliant -AO7417L is Halogen Free VDS (V) = -20V (VGS = -4.5V) ID = -2 A RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 100mΩ (VGS = -2.5V) RDS(ON) < 125mΩ (VGS = -1.8V) RDS(ON) < 150mΩ (VGS = -1.5V) SC-70-6 (SOT-363) Top View D D G 1 6 2 5 3 4 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage V Gate-Source Voltage GS Continuous Drain Current A Pulsed Drain Current TA=25°C TA=70°C ID IDM B TA=25°C Power Dissipation A PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A t ≤ 10s Steady-State Steady-State Alpha Omega Semiconductor, Ltd. RθJA RθJL Steady State -20 ±8 Units V V -2 -1.9 -1.7 -1.6 A -20 0.63 0.57 0.4 0.36 TJ, TSTG Symbol A 10 Sec -55 to 150 Typ 160 180 130 W °C Max 200 220 160 Units °C/W °C/W °C/W www.aosmd.com AO7417 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 TJ=55°C VGS=-4.5V, ID=-2A TJ=125°C Static Drain-Source On-Resistance VGS=-2.5V, ID=-1.8A Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge nA -1 V A 65 80 90 110 80 100 mΩ mΩ 125 115 150 mΩ -1 V -1 A 745 pF VDS=-5V, ID=-2A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance ±100 100 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance -0.65 µA VGS=-1.5V, ID=-0.5A Forward Transconductance Crss -5 VGS=-1.8V, ID=-1.5A VSD Coss Units mΩ gFS IS Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 10 -0.7 560 VGS=0V, VDS=-10V, f=1MHz S 80 pF 70 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2A pF 15 23 Ω 8.5 11 nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf Turn-Off Fall Time 56 ns trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 27 VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=6Ω 49 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1:Aug 2005 Alpha Omega Semiconductor, Ltd. www.aosmd.com AO7417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 12 -4.5V -3V 10 16 8 12 -ID(A) -ID (A) -2.5V -2V 8 6 4 VGS=4.5V, ID=1.8A 125°C 4 2 VGS=2.5V, ID=1.7A VGS=-1.5V 0 1 2 25°C VGS=1.8V, ID=1A 0 3 0 4 5 VGS=1.5V, ID=1A 0.5 1 -VDS (Volts) Fig 1: On-Region Characteristics 140 2 2.5 Normalized On-Resistance 1.5 130 VGS=-1.5V 120 RDS(ON) (mΩ) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V 110 100 VGS=-2.5V 90 80 VGS=-4.5V 70 60 VGS=-4.5V ID=-2A 1.4 1.3 VGS=-1.5V ID=-0.5A 1.2 VGS=-1.8V ID=-1.5A 1.1 1 0.9 0 2 4 6 8 10 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 25 10 170 1 140 0.1 -IS (A) RDS(ON) (mΩ) ID=-2A 110 125°C 25°C 0.01 125°C 0.001 80 25°C 0.0001 50 1 2 3 4 5 6 7 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO7417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 3 2 VGS=4.5V, ID=1.8A Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-4.5V ID=-2A VDS=10V ID=2.2A 1000 800 Ciss 600 400 1 VGS=2.5V, ID=1.7A VGS=1.8V, ID=1A 0 0 2 4 V6GS=1.5V,8 ID=1A Coss 200 Crss 0 10 0 5 10 15 100 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited Power (W) -ID (Amps) 10.0 100µs 1.0 1ms 10ms 0.1 0.0 TJ(Max)=150°C TA=25°C 0.1 DC 1 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=220°C/W 10 1 100ms 1s 10s 0.1 0.0001 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. www.aosmd.com