AOSMD AO3438

AO3438
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3438 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. AO3438 and AO3438L are eletrically
identical.
-RoHs Compliant
-AO3438L is Halogen Free
VDS = 20V
ID = 3A
RDS(ON) < 62mΩ
RDS(ON) < 70mΩ
RDS(ON) < 85mΩ
TO-236
(SOT-23)
Top View
(V GS = 4.5V)
(V GS = 4.5V)
(VGS = 2.5V)
(VGS = 1.8V)
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±8
V
16
1.4
W
0.9
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2.5
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
3
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
AO3438
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
16
TJ=55°C
VGS=4.5V, ID=3A
TJ=125°C
VGS=2.5V, ID=2.8A
5
0.7
58
70
mΩ
85
mΩ
11
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
0.7
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
260
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=3A
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=5V, VDS=10V, RL=3.3Ω,
RGEN=6Ω
mΩ
S
1
V
2
A
320
pF
48
pF
27
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
V
85
68
Crss
1
62
VGS=1.8V, ID=2.5A
VGS=0V, VDS=10V, f=1MHz
nA
68
VDS=5V, ID=3A
Coss
100
51
Forward Transconductance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
A
gFS
IS
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
pF
3
4.5
Ω
2.9
3.8
nC
0.4
nC
0.6
nC
2.5
ns
3.2
ns
21
ns
3
ns
trr
Body Diode Reverse Recovery Time
IF=3A, dI/dt=100A/µs
14
Qrr
Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs
3.8
19
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev1 : March 2008
2
FR-4 board with 2oz. Copper, in a still12
air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
16
VDS=5V
4.5V
12
ID(A)
ID (A)
2V
2.5V
12
8
8
VGS=1.5V
4
4
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Figure 1: On-Region Characteristics
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
120
Normalized On-Resistance
1.6
100
RDS(ON) (mΩ)
1
VGS=1.8V
80
VGS=2.5V
60
VGS=1.8V
ID=2A
1.4
VGS=2.5V
ID=2.8A
VGS=4.5V
ID=3A
1.2
1
VGS=4.5V
40
0.8
0
3
6
9
12
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
120
ID=3A
1E+00
12
125°C
1E-01
80
IS (A)
RDS(ON) (mΩ)
100
125°C
1E-02
25°C
1E-03
60
1E-04
25°C
40
1E-05
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO3438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
3
2
Ciss
300
Capacitance (pF)
4
VGS (Volts)
400
VDS=10V
ID=3A
200
Coss
100
1
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
10
1000
15
20
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
100µ
ID (Amps)
5
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
10.00
1.00
Crss
1m
RDS(ON)
limited
10ms
100
0.1s
0.10
DC
1s
1
0.00001
0.01
0.1
1
10
10
100
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000